JP3678437B2 - 液晶表示装置の製造方法および液晶表示装置 - Google Patents

液晶表示装置の製造方法および液晶表示装置 Download PDF

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Publication number
JP3678437B2
JP3678437B2 JP4559694A JP4559694A JP3678437B2 JP 3678437 B2 JP3678437 B2 JP 3678437B2 JP 4559694 A JP4559694 A JP 4559694A JP 4559694 A JP4559694 A JP 4559694A JP 3678437 B2 JP3678437 B2 JP 3678437B2
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JP
Japan
Prior art keywords
thin film
film transistor
gate electrode
region
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4559694A
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English (en)
Japanese (ja)
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JPH07254711A (ja
Inventor
敏浩 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4559694A priority Critical patent/JP3678437B2/ja
Priority to US08/404,462 priority patent/US5506165A/en
Priority to KR19950005400A priority patent/KR950027445A/ko
Publication of JPH07254711A publication Critical patent/JPH07254711A/ja
Application granted granted Critical
Publication of JP3678437B2 publication Critical patent/JP3678437B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP4559694A 1994-03-16 1994-03-16 液晶表示装置の製造方法および液晶表示装置 Expired - Lifetime JP3678437B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP4559694A JP3678437B2 (ja) 1994-03-16 1994-03-16 液晶表示装置の製造方法および液晶表示装置
US08/404,462 US5506165A (en) 1994-03-16 1995-03-15 Method of manufacturing liquid-crystal display panel
KR19950005400A KR950027445A (enExample) 1994-03-16 1995-03-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4559694A JP3678437B2 (ja) 1994-03-16 1994-03-16 液晶表示装置の製造方法および液晶表示装置

Publications (2)

Publication Number Publication Date
JPH07254711A JPH07254711A (ja) 1995-10-03
JP3678437B2 true JP3678437B2 (ja) 2005-08-03

Family

ID=12723739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4559694A Expired - Lifetime JP3678437B2 (ja) 1994-03-16 1994-03-16 液晶表示装置の製造方法および液晶表示装置

Country Status (3)

Country Link
US (1) US5506165A (enExample)
JP (1) JP3678437B2 (enExample)
KR (1) KR950027445A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2653099B2 (ja) * 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル，投写型表示装置及びビューファインダー
US7271410B2 (en) * 1995-03-28 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Active matrix circuit
JPH08264802A (ja) * 1995-03-28 1996-10-11 Semiconductor Energy Lab Co Ltd 半導体作製方法、薄膜トランジスタ作製方法および薄膜トランジスタ
JP2000111945A (ja) * 1998-10-01 2000-04-21 Sony Corp 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
US6492190B2 (en) 1998-10-05 2002-12-10 Sony Corporation Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device
US20030078658A1 (en) * 2001-01-25 2003-04-24 Gholam-Reza Zadno-Azizi Single-piece accomodating intraocular lens system
KR100437475B1 (ko) * 2001-04-13 2004-06-23 삼성에스디아이 주식회사 평판 디스플레이 장치용 표시 소자 제조 방법
JP2004045576A (ja) * 2002-07-09 2004-02-12 Sharp Corp 液晶表示装置及びその製造方法
CN100395884C (zh) * 2003-11-07 2008-06-18 友达光电股份有限公司 形成cmos晶体管的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6319876A (ja) * 1986-07-11 1988-01-27 Fuji Xerox Co Ltd 薄膜トランジスタ装置
JP2771820B2 (ja) * 1988-07-08 1998-07-02 株式会社日立製作所 アクティブマトリクスパネル及びその製造方法
US5256562A (en) * 1990-12-31 1993-10-26 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
KR960001941B1 (ko) * 1992-11-10 1996-02-08 재단법인한국전자통신연구소 평면 디스플레이 장치

Also Published As

Publication number Publication date
US5506165A (en) 1996-04-09
KR950027445A (enExample) 1995-10-16
JPH07254711A (ja) 1995-10-03

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