JP3676276B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP3676276B2
JP3676276B2 JP2001295292A JP2001295292A JP3676276B2 JP 3676276 B2 JP3676276 B2 JP 3676276B2 JP 2001295292 A JP2001295292 A JP 2001295292A JP 2001295292 A JP2001295292 A JP 2001295292A JP 3676276 B2 JP3676276 B2 JP 3676276B2
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JP
Japan
Prior art keywords
film
silicide film
silicide
semiconductor layer
gate electrode
Prior art date
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Expired - Fee Related
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JP2001295292A
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English (en)
Japanese (ja)
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JP2002184717A5 (enExample
JP2002184717A (ja
Inventor
総一郎 糸長
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2001295292A priority Critical patent/JP3676276B2/ja
Publication of JP2002184717A publication Critical patent/JP2002184717A/ja
Publication of JP2002184717A5 publication Critical patent/JP2002184717A5/ja
Application granted granted Critical
Publication of JP3676276B2 publication Critical patent/JP3676276B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2001295292A 2000-10-02 2001-09-27 半導体装置及びその製造方法 Expired - Fee Related JP3676276B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001295292A JP3676276B2 (ja) 2000-10-02 2001-09-27 半導体装置及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-302064 2000-10-02
JP2000302064 2000-10-02
JP2001295292A JP3676276B2 (ja) 2000-10-02 2001-09-27 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2002184717A JP2002184717A (ja) 2002-06-28
JP2002184717A5 JP2002184717A5 (enExample) 2004-10-14
JP3676276B2 true JP3676276B2 (ja) 2005-07-27

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JP2001295292A Expired - Fee Related JP3676276B2 (ja) 2000-10-02 2001-09-27 半導体装置及びその製造方法

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JP (1) JP3676276B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100491419B1 (ko) * 2002-10-29 2005-05-25 매그나칩 반도체 유한회사 반도체 소자의 제조 방법
KR101024637B1 (ko) * 2003-07-18 2011-03-25 매그나칩 반도체 유한회사 반도체 소자의 제조 방법
JP2005294360A (ja) * 2004-03-31 2005-10-20 Nec Electronics Corp 半導体装置の製造方法
US7235471B2 (en) * 2004-05-26 2007-06-26 Freescale Semiconductor, Inc. Method for forming a semiconductor device having a silicide layer
CN101088155A (zh) * 2004-10-25 2007-12-12 斯班逊有限公司 半导体装置及其制造方法
KR100571424B1 (ko) 2004-12-30 2006-04-14 동부아남반도체 주식회사 이중 스텝 소오스/드레인 이온 주입에 의한 안정한트랜지스터 형성 방법
KR100976667B1 (ko) * 2007-04-06 2010-08-18 주식회사 하이닉스반도체 반도체 소자의 제조방법
KR101561862B1 (ko) 2008-12-26 2015-10-21 삼성전자 주식회사 반도체 집적 회로 장치의 제조 방법
CN102460660B (zh) * 2009-06-26 2014-08-06 株式会社东芝 半导体装置的制造方法
US11349005B2 (en) 2020-05-22 2022-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Silicide structures in transistors and methods of forming
CN117877966A (zh) * 2023-12-25 2024-04-12 浙江大学 基于低能量轻离子注入的自对准金属硅化物形成工艺

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Publication number Publication date
JP2002184717A (ja) 2002-06-28

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