JP3658269B2 - 固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法 - Google Patents

固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法 Download PDF

Info

Publication number
JP3658269B2
JP3658269B2 JP2000095197A JP2000095197A JP3658269B2 JP 3658269 B2 JP3658269 B2 JP 3658269B2 JP 2000095197 A JP2000095197 A JP 2000095197A JP 2000095197 A JP2000095197 A JP 2000095197A JP 3658269 B2 JP3658269 B2 JP 3658269B2
Authority
JP
Japan
Prior art keywords
gas
ruthenium
film
etching
ozone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000095197A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001284317A5 (enExample
JP2001284317A (ja
Inventor
美和子 中原
利行 荒井
茂 大野
隆 湯之上
助芳 恒川
和人 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2000095197A priority Critical patent/JP3658269B2/ja
Publication of JP2001284317A publication Critical patent/JP2001284317A/ja
Publication of JP2001284317A5 publication Critical patent/JP2001284317A5/ja
Application granted granted Critical
Publication of JP3658269B2 publication Critical patent/JP3658269B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2000095197A 2000-03-29 2000-03-29 固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法 Expired - Fee Related JP3658269B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000095197A JP3658269B2 (ja) 2000-03-29 2000-03-29 固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000095197A JP3658269B2 (ja) 2000-03-29 2000-03-29 固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001284317A JP2001284317A (ja) 2001-10-12
JP2001284317A5 JP2001284317A5 (enExample) 2004-11-25
JP3658269B2 true JP3658269B2 (ja) 2005-06-08

Family

ID=18610127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000095197A Expired - Fee Related JP3658269B2 (ja) 2000-03-29 2000-03-29 固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP3658269B2 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3822804B2 (ja) 2001-06-18 2006-09-20 株式会社日立製作所 半導体装置の製造方法
JP2005187880A (ja) * 2003-12-25 2005-07-14 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 成膜装置のクリーニング方法
JP5481547B2 (ja) * 2006-08-24 2014-04-23 富士通セミコンダクター株式会社 金属付着物の除去方法、基板処理装置、および記録媒体
CN101617065B (zh) 2007-02-21 2011-11-23 乔治洛德方法研究和开发液化空气有限公司 在基底上形成钌基薄膜的方法
JP5190215B2 (ja) * 2007-03-30 2013-04-24 東京エレクトロン株式会社 ターボ分子ポンプの洗浄方法
US9482755B2 (en) 2008-11-17 2016-11-01 Faro Technologies, Inc. Measurement system having air temperature compensation between a target and a laser tracker
US8859047B2 (en) 2010-02-23 2014-10-14 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
US8619265B2 (en) 2011-03-14 2013-12-31 Faro Technologies, Inc. Automatic measurement of dimensional data with a laser tracker
US9377885B2 (en) 2010-04-21 2016-06-28 Faro Technologies, Inc. Method and apparatus for locking onto a retroreflector with a laser tracker
US9772394B2 (en) 2010-04-21 2017-09-26 Faro Technologies, Inc. Method and apparatus for following an operator and locking onto a retroreflector with a laser tracker
US9400170B2 (en) 2010-04-21 2016-07-26 Faro Technologies, Inc. Automatic measurement of dimensional data within an acceptance region by a laser tracker
GB2518544A (en) 2011-03-03 2015-03-25 Faro Tech Inc Target apparatus and method
US9482529B2 (en) 2011-04-15 2016-11-01 Faro Technologies, Inc. Three-dimensional coordinate scanner and method of operation
US9164173B2 (en) 2011-04-15 2015-10-20 Faro Technologies, Inc. Laser tracker that uses a fiber-optic coupler and an achromatic launch to align and collimate two wavelengths of light
US8537376B2 (en) 2011-04-15 2013-09-17 Faro Technologies, Inc. Enhanced position detector in laser tracker
US9686532B2 (en) 2011-04-15 2017-06-20 Faro Technologies, Inc. System and method of acquiring three-dimensional coordinates using multiple coordinate measurement devices
US9284623B2 (en) 2011-05-31 2016-03-15 National University Corporation Hamamatsu University School Of Medicine Recovery of reusable osmium tetroxide
GB2515922A (en) 2012-01-27 2015-01-07 Faro Tech Inc Inspection method with barcode identification
US9041914B2 (en) 2013-03-15 2015-05-26 Faro Technologies, Inc. Three-dimensional coordinate scanner and method of operation
US9395174B2 (en) 2014-06-27 2016-07-19 Faro Technologies, Inc. Determining retroreflector orientation by optimizing spatial fit
SG11201703033RA (en) * 2014-10-17 2017-05-30 Acm Research Shanghai Inc Barrier layer removal method and semiconductor structure forming method
JP7077108B2 (ja) * 2018-04-05 2022-05-30 東京エレクトロン株式会社 被加工物の処理方法
US11183398B2 (en) * 2018-08-10 2021-11-23 Tokyo Electron Limited Ruthenium hard mask process
JP7330046B2 (ja) * 2019-09-30 2023-08-21 東京エレクトロン株式会社 基板処理方法、及び基板処理装置
JP7576920B2 (ja) * 2020-03-27 2024-11-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2024503424A (ja) * 2021-01-19 2024-01-25 ラム リサーチ コーポレーション 金属エッチング残渣を有するチャンバの構成要素を洗浄する方法
US11798813B2 (en) * 2021-04-26 2023-10-24 Applied Materials, Inc. Selective removal of ruthenium-containing materials
JP7693481B2 (ja) * 2021-09-21 2025-06-17 東京エレクトロン株式会社 成膜装置、成膜方法及び成膜システム

Also Published As

Publication number Publication date
JP2001284317A (ja) 2001-10-12

Similar Documents

Publication Publication Date Title
JP3658269B2 (ja) 固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法
US7264677B2 (en) Process for treating solid surface and substrate surface
JP3990881B2 (ja) 半導体製造装置及びそのクリーニング方法
JP3815937B2 (ja) 半導体装置のコンタクトホール埋め込み方法
KR100781408B1 (ko) 반도체 처리 장치에서의 처리실의 클리닝 방법
JP4690308B2 (ja) 高温水素含有プラズマによるチャンバ及びウェーハ表面から物質を除去する方法及び装置
TWI473149B (zh) 半導體製程系統之清潔
JP4459329B2 (ja) 付着膜の除去方法及び除去装置
JPH0778808A (ja) コールドウォールｃｖｄシステムにおける低温エッチング
JP2009050854A (ja) 窒化チタンの除去方法
US6410454B1 (en) Method and apparatus for removing contaminants from the surface of a semiconductor wafer
US6664184B2 (en) Method for manufacturing semiconductor device having an etching treatment
JP3324455B2 (ja) 珪素系半導体基板の清浄化方法
JP2006148095A (ja) 六フッ化硫黄リモートプラズマ源洗浄
JP3494933B2 (ja) 半導体製造装置のクリ−ニング方法
US6184132B1 (en) Integrated cobalt silicide process for semiconductor devices
JP3071933B2 (ja) 解離したハロゲン系腐蝕性ガスに対する耐蝕性部材およびその製造方法
KR100362906B1 (ko) 고체 표면, 기판 및 반도체 제조 장치의 처리 방법 및이들을 이용한 반도체 장치의 제조 방법
JP2008060171A (ja) 半導体処理装置のクリーニング方法
GB2183204A (en) Nitrogen trifluoride as an in-situ cleaning agent
JPH02151031A (ja) 半導体装置の製造方法
US6236023B1 (en) Cleaning process for rapid thermal processing system
TW517302B (en) Process for treating solid surface, substrate and semiconductor manufacture device, and manufacturing process using the semiconductor device
JPH0748482B2 (ja) 酸化膜等の被膜除去処理後における基板表面の洗浄方法
JPH0294631A (ja) 薄膜形成方法及び薄膜形成装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20031128

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20040309

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040715

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20050301

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20050311

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080318

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090318

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090318

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100318

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110318

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110318

Year of fee payment: 6

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110318

Year of fee payment: 6

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110318

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120318

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130318

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130318

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140318

Year of fee payment: 9

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees