JP2001284317A5 - - Google Patents
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- Publication number
- JP2001284317A5 JP2001284317A5 JP2000095197A JP2000095197A JP2001284317A5 JP 2001284317 A5 JP2001284317 A5 JP 2001284317A5 JP 2000095197 A JP2000095197 A JP 2000095197A JP 2000095197 A JP2000095197 A JP 2000095197A JP 2001284317 A5 JP2001284317 A5 JP 2001284317A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- etching
- oxygen atom
- osmium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 31
- 125000004430 oxygen atom Chemical group O* 0.000 claims 14
- 238000005530 etching Methods 0.000 claims 13
- 238000000034 method Methods 0.000 claims 13
- 239000007787 solid Substances 0.000 claims 12
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 6
- 229910052762 osmium Inorganic materials 0.000 claims 6
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 6
- 229910052707 ruthenium Inorganic materials 0.000 claims 6
- 229910000487 osmium oxide Inorganic materials 0.000 claims 5
- JIWAALDUIFCBLV-UHFFFAOYSA-N oxoosmium Chemical compound [Os]=O JIWAALDUIFCBLV-UHFFFAOYSA-N 0.000 claims 5
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 5
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 229910052736 halogen Inorganic materials 0.000 claims 2
- 150000002367 halogens Chemical class 0.000 claims 2
- 239000012433 hydrogen halide Substances 0.000 claims 2
- 229910000039 hydrogen halide Inorganic materials 0.000 claims 2
- 150000002926 oxygen Chemical class 0.000 claims 2
- 238000003672 processing method Methods 0.000 claims 2
- 238000004381 surface treatment Methods 0.000 claims 2
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 239000000047 product Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000095197A JP3658269B2 (ja) | 2000-03-29 | 2000-03-29 | 固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000095197A JP3658269B2 (ja) | 2000-03-29 | 2000-03-29 | 固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001284317A JP2001284317A (ja) | 2001-10-12 |
| JP2001284317A5 true JP2001284317A5 (enExample) | 2004-11-25 |
| JP3658269B2 JP3658269B2 (ja) | 2005-06-08 |
Family
ID=18610127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000095197A Expired - Fee Related JP3658269B2 (ja) | 2000-03-29 | 2000-03-29 | 固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3658269B2 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3822804B2 (ja) | 2001-06-18 | 2006-09-20 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JP2005187880A (ja) * | 2003-12-25 | 2005-07-14 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | 成膜装置のクリーニング方法 |
| JP5481547B2 (ja) * | 2006-08-24 | 2014-04-23 | 富士通セミコンダクター株式会社 | 金属付着物の除去方法、基板処理装置、および記録媒体 |
| EP2132357B1 (en) | 2007-02-21 | 2017-03-29 | L'air Liquide-societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Methods for forming a ruthenium-based film on a substrate |
| JP5190215B2 (ja) * | 2007-03-30 | 2013-04-24 | 東京エレクトロン株式会社 | ターボ分子ポンプの洗浄方法 |
| US9482755B2 (en) | 2008-11-17 | 2016-11-01 | Faro Technologies, Inc. | Measurement system having air temperature compensation between a target and a laser tracker |
| US8859047B2 (en) | 2010-02-23 | 2014-10-14 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Use of ruthenium tetroxide as a precursor and reactant for thin film depositions |
| US9772394B2 (en) | 2010-04-21 | 2017-09-26 | Faro Technologies, Inc. | Method and apparatus for following an operator and locking onto a retroreflector with a laser tracker |
| US8619265B2 (en) | 2011-03-14 | 2013-12-31 | Faro Technologies, Inc. | Automatic measurement of dimensional data with a laser tracker |
| US9400170B2 (en) | 2010-04-21 | 2016-07-26 | Faro Technologies, Inc. | Automatic measurement of dimensional data within an acceptance region by a laser tracker |
| US9377885B2 (en) | 2010-04-21 | 2016-06-28 | Faro Technologies, Inc. | Method and apparatus for locking onto a retroreflector with a laser tracker |
| GB2518998A (en) | 2011-03-03 | 2015-04-08 | Faro Tech Inc | Target apparatus and method |
| US9686532B2 (en) | 2011-04-15 | 2017-06-20 | Faro Technologies, Inc. | System and method of acquiring three-dimensional coordinates using multiple coordinate measurement devices |
| US9482529B2 (en) | 2011-04-15 | 2016-11-01 | Faro Technologies, Inc. | Three-dimensional coordinate scanner and method of operation |
| WO2012141868A1 (en) | 2011-04-15 | 2012-10-18 | Faro Technologies, Inc. | Enhanced position detector in laser tracker |
| US9164173B2 (en) | 2011-04-15 | 2015-10-20 | Faro Technologies, Inc. | Laser tracker that uses a fiber-optic coupler and an achromatic launch to align and collimate two wavelengths of light |
| JP5886845B2 (ja) | 2011-05-31 | 2016-03-16 | 株式会社ハマネツ | 再利用可能な酸化オスミウム（ｖｉｉｉ）の回収 |
| WO2013112455A1 (en) | 2012-01-27 | 2013-08-01 | Faro Technologies, Inc. | Inspection method with barcode identification |
| US9041914B2 (en) | 2013-03-15 | 2015-05-26 | Faro Technologies, Inc. | Three-dimensional coordinate scanner and method of operation |
| US9395174B2 (en) | 2014-06-27 | 2016-07-19 | Faro Technologies, Inc. | Determining retroreflector orientation by optimizing spatial fit |
| SG11201703033RA (en) * | 2014-10-17 | 2017-05-30 | Acm Research Shanghai Inc | Barrier layer removal method and semiconductor structure forming method |
| JP7077108B2 (ja) * | 2018-04-05 | 2022-05-30 | 東京エレクトロン株式会社 | 被加工物の処理方法 |
| US11183398B2 (en) * | 2018-08-10 | 2021-11-23 | Tokyo Electron Limited | Ruthenium hard mask process |
| JP7330046B2 (ja) | 2019-09-30 | 2023-08-21 | 東京エレクトロン株式会社 | 基板処理方法、及び基板処理装置 |
| JP7576920B2 (ja) * | 2020-03-27 | 2024-11-01 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| CN116724143A (zh) * | 2021-01-19 | 2023-09-08 | 朗姆研究公司 | 具有金属蚀刻残留物的室部件的清洁方法 |
| US11798813B2 (en) * | 2021-04-26 | 2023-10-24 | Applied Materials, Inc. | Selective removal of ruthenium-containing materials |
| JP7693481B2 (ja) * | 2021-09-21 | 2025-06-17 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び成膜システム |
-
2000
- 2000-03-29 JP JP2000095197A patent/JP3658269B2/ja not_active Expired - Fee Related
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