JP3512561B2 - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法Info
- Publication number
- JP3512561B2 JP3512561B2 JP17850896A JP17850896A JP3512561B2 JP 3512561 B2 JP3512561 B2 JP 3512561B2 JP 17850896 A JP17850896 A JP 17850896A JP 17850896 A JP17850896 A JP 17850896A JP 3512561 B2 JP3512561 B2 JP 3512561B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- contact
- active layer
- opening
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000010408 film Substances 0.000 claims description 95
- 239000010410 layer Substances 0.000 claims description 85
- 239000010409 thin film Substances 0.000 claims description 39
- 239000011229 interlayer Substances 0.000 claims description 30
- 239000011159 matrix material Substances 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 18
- 238000000059 patterning Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 24
- 239000000758 substrate Substances 0.000 description 18
- 239000011521 glass Substances 0.000 description 13
- 230000010354 integration Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000010407 anodic oxide Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17850896A JP3512561B2 (ja) | 1996-06-18 | 1996-06-18 | 半導体装置およびその作製方法 |
| TW086108046A TW334582B (en) | 1996-06-18 | 1997-06-11 | Semiconductor device and method of fabtricating same |
| US08/873,846 US6040589A (en) | 1996-06-18 | 1997-06-12 | Semiconductor device having larger contact hole area than an area covered by contact electrode in the hole |
| KR1019970025473A KR100493976B1 (ko) | 1996-06-18 | 1997-06-18 | 반도체장치,액티브매트릭스장치,및액티브매트릭스장치를구비한프로젝터 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17850896A JP3512561B2 (ja) | 1996-06-18 | 1996-06-18 | 半導体装置およびその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH1012735A JPH1012735A (ja) | 1998-01-16 |
| JP3512561B2 true JP3512561B2 (ja) | 2004-03-29 |
| JPH1012735A5 JPH1012735A5 (enExample) | 2004-07-08 |
Family
ID=16049701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17850896A Expired - Fee Related JP3512561B2 (ja) | 1996-06-18 | 1996-06-18 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3512561B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12069897B2 (en) | 2015-05-04 | 2024-08-20 | Samsung Display Co., Ltd. | Organic light-emitting diode (OLED) display having a semiconductor layer including a third portion extending in a third direction joining a first and second portions that extending in different directions |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3519214B2 (ja) * | 1996-06-20 | 2004-04-12 | 株式会社半導体エネルギー研究所 | 集積回路およびその作製方法 |
| JP3607016B2 (ja) * | 1996-10-02 | 2005-01-05 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法、並びに携帯型の情報処理端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、カメラおよびプロジェクター |
| JP2001332738A (ja) * | 2000-05-24 | 2001-11-30 | Sony Corp | 薄膜半導体装置、液晶表示装置及びエレクトロルミネッセンス表示装置 |
| JP2003188386A (ja) * | 2001-12-20 | 2003-07-04 | Sony Corp | 半導体装置およびその製造方法 |
| JP6127425B2 (ja) | 2012-09-26 | 2017-05-17 | 凸版印刷株式会社 | 積層構造体、薄膜トランジスタアレイおよびそれらの製造方法 |
| JP6494341B2 (ja) | 2015-03-13 | 2019-04-03 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP6762845B2 (ja) * | 2016-10-28 | 2020-09-30 | 株式会社ジャパンディスプレイ | 表示装置及び配線基板 |
-
1996
- 1996-06-18 JP JP17850896A patent/JP3512561B2/ja not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12069897B2 (en) | 2015-05-04 | 2024-08-20 | Samsung Display Co., Ltd. | Organic light-emitting diode (OLED) display having a semiconductor layer including a third portion extending in a third direction joining a first and second portions that extending in different directions |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1012735A (ja) | 1998-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW478014B (en) | Semiconductor device and method of manufacturing thereof | |
| US7700495B2 (en) | Thin film transistor device and method of manufacturing the same, and liquid crystal display device | |
| KR100488310B1 (ko) | 액정 표시 패널 | |
| US6927809B2 (en) | Active matrix substrate and display device | |
| JP3464944B2 (ja) | 薄膜トランジスタ基板、その製造方法および液晶表示装置 | |
| CN100397642C (zh) | 半导体装置及其制造方法 | |
| EP0484965A2 (en) | Active matrix substrate | |
| JP2003203919A (ja) | 薄膜トランジスタ装置及びその製造方法 | |
| WO2016165241A1 (zh) | 阵列基板及其制备方法、显示装置 | |
| JP4586573B2 (ja) | 電気光学装置及びその製造方法、薄膜トランジスタ、電子機器 | |
| JP3519214B2 (ja) | 集積回路およびその作製方法 | |
| JP3512561B2 (ja) | 半導体装置およびその作製方法 | |
| JP2004363300A (ja) | 液晶表示装置 | |
| US6040589A (en) | Semiconductor device having larger contact hole area than an area covered by contact electrode in the hole | |
| JP2004334064A (ja) | 液晶表示装置及びその製造方法 | |
| JP3105408B2 (ja) | 液晶表示素子 | |
| JP3892115B2 (ja) | ディスプレイ及びディスプレイを備えた装置 | |
| JP2002176179A (ja) | 電気光学装置および電気光学装置の製造方法、並びに半導体装置 | |
| JPH09325367A (ja) | 表示装置 | |
| JP2003282881A (ja) | 薄膜トランジスタおよびその製造方法ならびに液晶表示装置 | |
| KR100655276B1 (ko) | 박막트랜지스터 액정표시장치 및 그 제조 방법 | |
| JP4204654B2 (ja) | 半導体装置及びその製造方法 | |
| JP2004004988A (ja) | 液晶表示パネル | |
| JPH0611728A (ja) | 液晶表示装置およびその製造方法 | |
| JP2006301476A (ja) | 電気光学装置及びその製造方法、電子機器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20040106 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040107 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080116 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090116 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090116 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100116 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100116 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100116 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110116 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110116 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120116 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120116 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130116 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130116 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140116 Year of fee payment: 10 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |