JP3341221B2 - 半導体ウエハの固定方法及びその装置 - Google Patents
半導体ウエハの固定方法及びその装置Info
- Publication number
- JP3341221B2 JP3341221B2 JP1699894A JP1699894A JP3341221B2 JP 3341221 B2 JP3341221 B2 JP 3341221B2 JP 1699894 A JP1699894 A JP 1699894A JP 1699894 A JP1699894 A JP 1699894A JP 3341221 B2 JP3341221 B2 JP 3341221B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- electrodes
- capacitance
- wafer support
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 238000000034 method Methods 0.000 title claims description 11
- 230000008859 change Effects 0.000 claims description 8
- 238000012544 monitoring process Methods 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 claims description 7
- 230000005284 excitation Effects 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 229960001716 benzalkonium Drugs 0.000 claims 1
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 230000010355 oscillation Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 230000000284 resting effect Effects 0.000 description 3
- 239000005394 sealing glass Substances 0.000 description 3
- 238000005219 brazing Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- APTZNLHMIGJTEW-UHFFFAOYSA-N pyraflufen-ethyl Chemical class C1=C(Cl)C(OCC(=O)OCC)=CC(C=2C(=C(OC(F)F)N(C)N=2)Cl)=C1F APTZNLHMIGJTEW-UHFFFAOYSA-N 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Measurement Of Resistance Or Impedance (AREA)
- Jigs For Machine Tools (AREA)
- Machine Tool Sensing Apparatuses (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/005,030 US5436790A (en) | 1993-01-15 | 1993-01-15 | Wafer sensing and clamping monitor |
| US005030 | 1993-01-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH077073A JPH077073A (ja) | 1995-01-10 |
| JP3341221B2 true JP3341221B2 (ja) | 2002-11-05 |
Family
ID=21713775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1699894A Ceased JP3341221B2 (ja) | 1993-01-15 | 1994-01-17 | 半導体ウエハの固定方法及びその装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5436790A (enExample) |
| EP (1) | EP0607043B1 (enExample) |
| JP (1) | JP3341221B2 (enExample) |
| KR (1) | KR100284663B1 (enExample) |
| CA (1) | CA2113290C (enExample) |
| DE (1) | DE69400113T2 (enExample) |
| TW (1) | TW231366B (enExample) |
Families Citing this family (76)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5467249A (en) * | 1993-12-20 | 1995-11-14 | International Business Machines Corporation | Electrostatic chuck with reference electrode |
| US5463525A (en) * | 1993-12-20 | 1995-10-31 | International Business Machines Corporation | Guard ring electrostatic chuck |
| GB2293689A (en) * | 1994-09-30 | 1996-04-03 | Nec Corp | Electrostatic chuck |
| EP0871843B1 (en) * | 1994-10-17 | 2003-05-14 | Varian Semiconductor Equipment Associates Inc. | Mounting member and method for clamping a flat thin conductive workpiece |
| US5671116A (en) * | 1995-03-10 | 1997-09-23 | Lam Research Corporation | Multilayered electrostatic chuck and method of manufacture thereof |
| US5670066A (en) * | 1995-03-17 | 1997-09-23 | Lam Research Corporation | Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated |
| US5754391A (en) * | 1996-05-17 | 1998-05-19 | Saphikon Inc. | Electrostatic chuck |
| US6298737B1 (en) * | 1996-05-29 | 2001-10-09 | Integrated Device Technology, Inc. | Ceramic ring undersize detection device |
| US5812362A (en) * | 1996-06-14 | 1998-09-22 | Applied Materials, Inc. | Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks |
| US5952060A (en) * | 1996-06-14 | 1999-09-14 | Applied Materials, Inc. | Use of carbon-based films in extending the lifetime of substrate processing system components |
| US5980194A (en) * | 1996-07-15 | 1999-11-09 | Applied Materials, Inc. | Wafer position error detection and correction system |
| US5835334A (en) * | 1996-09-30 | 1998-11-10 | Lam Research | Variable high temperature chuck for high density plasma chemical vapor deposition |
| JP3245369B2 (ja) * | 1996-11-20 | 2002-01-15 | 東京エレクトロン株式会社 | 被処理体を静電チャックから離脱する方法及びプラズマ処理装置 |
| US5886864A (en) * | 1996-12-02 | 1999-03-23 | Applied Materials, Inc. | Substrate support member for uniform heating of a substrate |
| TW325148U (en) * | 1997-01-23 | 1998-01-11 | Taiwan Semiconductor Mfg Co Ltd | Temperature processing device |
| GB9711273D0 (en) | 1997-06-03 | 1997-07-30 | Trikon Equip Ltd | Electrostatic chucks |
| US6075375A (en) * | 1997-06-11 | 2000-06-13 | Applied Materials, Inc. | Apparatus for wafer detection |
| US6205870B1 (en) | 1997-10-10 | 2001-03-27 | Applied Komatsu Technology, Inc. | Automated substrate processing systems and methods |
| US5901030A (en) * | 1997-12-02 | 1999-05-04 | Dorsey Gage, Inc. | Electrostatic chuck employing thermoelectric cooling |
| US5872694A (en) * | 1997-12-23 | 1999-02-16 | Siemens Aktiengesellschaft | Method and apparatus for determining wafer warpage for optimized electrostatic chuck clamping voltage |
| US5948986A (en) * | 1997-12-26 | 1999-09-07 | Applied Materials, Inc. | Monitoring of wafer presence and position in semiconductor processing operations |
| US5886865A (en) * | 1998-03-17 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for predicting failure of an eletrostatic chuck |
| US5969934A (en) * | 1998-04-10 | 1999-10-19 | Varian Semiconductor Equipment Associats, Inc. | Electrostatic wafer clamp having low particulate contamination of wafers |
| TW432580B (en) * | 1998-09-29 | 2001-05-01 | Applied Materials Inc | Piezoelectric method and apparatus for semiconductor wafer detection |
| US6113165A (en) * | 1998-10-02 | 2000-09-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self-sensing wafer holder and method of using |
| US6454332B1 (en) | 1998-12-04 | 2002-09-24 | Applied Materials, Inc. | Apparatus and methods for handling a substrate |
| US6215640B1 (en) | 1998-12-10 | 2001-04-10 | Applied Materials, Inc. | Apparatus and method for actively controlling surface potential of an electrostatic chuck |
| US6430022B2 (en) * | 1999-04-19 | 2002-08-06 | Applied Materials, Inc. | Method and apparatus for controlling chucking force in an electrostatic |
| US6248642B1 (en) | 1999-06-24 | 2001-06-19 | Ibis Technology Corporation | SIMOX using controlled water vapor for oxygen implants |
| US6155436A (en) * | 1999-08-18 | 2000-12-05 | Ibis Technology Corporation | Arc inhibiting wafer holder assembly |
| US6423975B1 (en) | 1999-08-18 | 2002-07-23 | Ibis Technology, Inc. | Wafer holder for simox processing |
| US6452195B1 (en) | 1999-08-18 | 2002-09-17 | Ibis Technology Corporation | Wafer holding pin |
| US6433342B1 (en) | 1999-08-18 | 2002-08-13 | Ibis Technology Corporation | Coated wafer holding pin |
| US6257001B1 (en) * | 1999-08-24 | 2001-07-10 | Lucent Technologies, Inc. | Cryogenic vacuum pump temperature sensor |
| US6740853B1 (en) * | 1999-09-29 | 2004-05-25 | Tokyo Electron Limited | Multi-zone resistance heater |
| DE60045384D1 (de) * | 1999-09-29 | 2011-01-27 | Tokyo Electron Ltd | Mehrzonenwiderstandsheizung |
| US6362946B1 (en) | 1999-11-02 | 2002-03-26 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic wafer clamp having electrostatic seal for retaining gas |
| US6538873B1 (en) | 1999-11-02 | 2003-03-25 | Varian Semiconductor Equipment Associates, Inc. | Active electrostatic seal and electrostatic vacuum pump |
| US6307728B1 (en) * | 2000-01-21 | 2001-10-23 | Applied Materials, Inc. | Method and apparatus for dechucking a workpiece from an electrostatic chuck |
| JP4615670B2 (ja) * | 2000-04-19 | 2011-01-19 | アプライド マテリアルズ インコーポレイテッド | 静電チャックにおけるチャッキング力を制御する方法及び装置 |
| KR100344221B1 (ko) * | 2000-09-22 | 2002-07-20 | 삼성전자 주식회사 | 웨이퍼 클램프 텐션 측정 장치 |
| US6403322B1 (en) | 2001-03-27 | 2002-06-11 | Lam Research Corporation | Acoustic detection of dechucking and apparatus therefor |
| US7073383B2 (en) * | 2001-06-07 | 2006-07-11 | Tokyo Electron Limited | Apparatus and method for determining clamping status of semiconductor wafer |
| US6998353B2 (en) | 2001-11-05 | 2006-02-14 | Ibis Technology Corporation | Active wafer cooling during damage engineering implant to enhance buried oxide formation in SIMOX wafers |
| US6710360B2 (en) | 2002-07-10 | 2004-03-23 | Axcelis Technologies, Inc. | Adjustable implantation angle workpiece support structure for an ion beam implanter |
| US6900444B2 (en) * | 2002-07-29 | 2005-05-31 | Axcelis Technologies, Inc. | Adjustable implantation angle workpiece support structure for an ion beam implanter |
| US6774373B2 (en) * | 2002-07-29 | 2004-08-10 | Axcelis Technologies, Inc. | Adjustable implantation angle workpiece support structure for an ion beam implanter |
| US20040079289A1 (en) * | 2002-10-23 | 2004-04-29 | Kellerman Peter L. | Electrostatic chuck wafer port and top plate with edge shielding and gas scavenging |
| US6740894B1 (en) | 2003-02-21 | 2004-05-25 | Axcelis Technologies, Inc. | Adjustable implantation angle workpiece support structure for an ion beam implanter utilizing a linear scan motor |
| US20040187787A1 (en) * | 2003-03-31 | 2004-09-30 | Dawson Keith E. | Substrate support having temperature controlled substrate support surface |
| US6828572B2 (en) * | 2003-04-01 | 2004-12-07 | Axcelis Technologies, Inc. | Ion beam incident angle detector for ion implant systems |
| US6794664B1 (en) | 2003-12-04 | 2004-09-21 | Axcelis Technologies, Inc. | Umbilical cord facilities connection for an ion beam implanter |
| US7245357B2 (en) * | 2003-12-15 | 2007-07-17 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US6987272B2 (en) * | 2004-03-05 | 2006-01-17 | Axcelis Technologies, Inc. | Work piece transfer system for an ion beam implanter |
| US7697260B2 (en) * | 2004-03-31 | 2010-04-13 | Applied Materials, Inc. | Detachable electrostatic chuck |
| US7030395B2 (en) * | 2004-08-06 | 2006-04-18 | Axcelis Technologies, Inc. | Workpiece support structure for an ion beam implanter featuring spherical sliding seal vacuum feedthrough |
| US7982195B2 (en) * | 2004-09-14 | 2011-07-19 | Axcelis Technologies, Inc. | Controlled dose ion implantation |
| US8226769B2 (en) * | 2006-04-27 | 2012-07-24 | Applied Materials, Inc. | Substrate support with electrostatic chuck having dual temperature zones |
| US7629597B2 (en) * | 2006-08-18 | 2009-12-08 | Axcelis Technologies, Inc. | Deposition reduction system for an ion implanter |
| US7993465B2 (en) * | 2006-09-07 | 2011-08-09 | Applied Materials, Inc. | Electrostatic chuck cleaning during semiconductor substrate processing |
| US7986146B2 (en) * | 2006-11-29 | 2011-07-26 | Globalfoundries Inc. | Method and system for detecting existence of an undesirable particle during semiconductor fabrication |
| US20090181475A1 (en) * | 2008-01-11 | 2009-07-16 | Novellus Systems, Inc. | Detecting the presence of a workpiece relative to a carrier head |
| US7558045B1 (en) * | 2008-03-20 | 2009-07-07 | Novellus Systems, Inc. | Electrostatic chuck assembly with capacitive sense feature, and related operating method |
| US7948734B2 (en) * | 2008-09-11 | 2011-05-24 | Tel Epion Inc. | Electrostatic chuck power supply |
| US8169769B2 (en) * | 2008-09-11 | 2012-05-01 | Tel Epion Inc. | Electrostatic chuck power supply |
| US8514544B2 (en) * | 2009-08-07 | 2013-08-20 | Trek, Inc. | Electrostatic clamp optimizer |
| JP6151028B2 (ja) * | 2013-01-17 | 2017-06-21 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| JP6066084B2 (ja) * | 2013-12-11 | 2017-01-25 | 日新イオン機器株式会社 | 基板保持装置、半導体製造装置及び基板吸着判別方法 |
| US9543110B2 (en) | 2013-12-20 | 2017-01-10 | Axcelis Technologies, Inc. | Reduced trace metals contamination ion source for an ion implantation system |
| GB2540883B (en) | 2014-02-07 | 2018-12-26 | Trek Inc | System and method for clamping a work piece |
| US20150357151A1 (en) | 2014-06-10 | 2015-12-10 | Axcelis Technologies, Inc. | Ion implantation source with textured interior surfaces |
| JP6942936B2 (ja) * | 2017-08-25 | 2021-09-29 | 株式会社アルバック | 真空装置、吸着電源 |
| JP7419288B2 (ja) * | 2021-03-30 | 2024-01-22 | キヤノントッキ株式会社 | 制御装置、成膜装置、制御方法、及び電子デバイスの製造方法 |
| CN113984788B (zh) * | 2021-12-24 | 2022-03-15 | 北京凯世通半导体有限公司 | 一种通过光学检测仪器对超低温离子注入设备监测的方法 |
| US12435964B2 (en) | 2023-11-16 | 2025-10-07 | Tokyo Electron Limited | Contactless capacitive measurement tool with improved throughput and accuracy |
| CN119008501B (zh) * | 2024-10-21 | 2025-02-14 | 天津吉兆源科技有限公司 | 静电卡盘电源及控制方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4184188A (en) * | 1978-01-16 | 1980-01-15 | Veeco Instruments Inc. | Substrate clamping technique in IC fabrication processes |
| US4261762A (en) * | 1979-09-14 | 1981-04-14 | Eaton Corporation | Method for conducting heat to or from an article being treated under vacuum |
| US4384918A (en) * | 1980-09-30 | 1983-05-24 | Fujitsu Limited | Method and apparatus for dry etching and electrostatic chucking device used therein |
| GB2147459A (en) * | 1983-09-30 | 1985-05-09 | Philips Electronic Associated | Electrostatic chuck for semiconductor wafers |
| US4692836A (en) * | 1983-10-31 | 1987-09-08 | Toshiba Kikai Kabushiki Kaisha | Electrostatic chucks |
| JPS6216540A (ja) * | 1985-07-15 | 1987-01-24 | Canon Inc | ウエハ搬送装置 |
| US4733632A (en) * | 1985-09-25 | 1988-03-29 | Tokyo Electron Limited | Wafer feeding apparatus |
| JPS63257481A (ja) * | 1987-04-14 | 1988-10-25 | Abisare:Kk | 静電保持装置 |
| EP0297227B1 (en) * | 1987-04-14 | 1993-03-17 | Abisare Co., Ltd. | Machine unit having retaining device using static electricity |
| US5103367A (en) * | 1987-05-06 | 1992-04-07 | Unisearch Limited | Electrostatic chuck using A.C. field excitation |
| US4962441A (en) * | 1989-04-10 | 1990-10-09 | Applied Materials, Inc. | Isolated electrostatic wafer blade clamp |
| US5173834A (en) * | 1989-06-02 | 1992-12-22 | Roland Dg Corporation | Electrostatic attraction apparatus |
| EP0460954B1 (en) * | 1990-06-08 | 1994-09-21 | Varian Associates, Inc. | Clamping a workpiece |
| US5325261A (en) * | 1991-05-17 | 1994-06-28 | Unisearch Limited | Electrostatic chuck with improved release |
| US5315473A (en) * | 1992-01-21 | 1994-05-24 | Applied Materials, Inc. | Isolated electrostatic chuck and excitation method |
-
1993
- 1993-01-15 US US08/005,030 patent/US5436790A/en not_active Expired - Lifetime
-
1994
- 1994-01-12 KR KR1019940000410A patent/KR100284663B1/ko not_active Expired - Lifetime
- 1994-01-13 CA CA002113290A patent/CA2113290C/en not_active Expired - Fee Related
- 1994-01-13 DE DE69400113T patent/DE69400113T2/de not_active Expired - Fee Related
- 1994-01-13 EP EP94300237A patent/EP0607043B1/en not_active Expired - Lifetime
- 1994-01-17 JP JP1699894A patent/JP3341221B2/ja not_active Ceased
- 1994-01-20 TW TW083100477A patent/TW231366B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100284663B1 (ko) | 2001-04-02 |
| CA2113290C (en) | 1999-11-30 |
| CA2113290A1 (en) | 1994-07-16 |
| DE69400113D1 (de) | 1996-05-02 |
| US5436790A (en) | 1995-07-25 |
| EP0607043B1 (en) | 1996-03-27 |
| JPH077073A (ja) | 1995-01-10 |
| EP0607043A1 (en) | 1994-07-20 |
| DE69400113T2 (de) | 1996-10-24 |
| TW231366B (enExample) | 1994-10-01 |
| KR940018947A (ko) | 1994-08-19 |
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