JP3104319B2 - 不揮発性記憶装置 - Google Patents

不揮発性記憶装置

Info

Publication number
JP3104319B2
JP3104319B2 JP21842591A JP21842591A JP3104319B2 JP 3104319 B2 JP3104319 B2 JP 3104319B2 JP 21842591 A JP21842591 A JP 21842591A JP 21842591 A JP21842591 A JP 21842591A JP 3104319 B2 JP3104319 B2 JP 3104319B2
Authority
JP
Japan
Prior art keywords
line
memory cell
column
lines
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP21842591A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0555530A (ja
Inventor
明 中川原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP21842591A priority Critical patent/JP3104319B2/ja
Priority to DE69230124T priority patent/DE69230124T2/de
Priority to EP92307318A priority patent/EP0529862B1/en
Priority to US07/928,442 priority patent/US5345416A/en
Priority to KR1019920015524A priority patent/KR100258039B1/ko
Publication of JPH0555530A publication Critical patent/JPH0555530A/ja
Application granted granted Critical
Publication of JP3104319B2 publication Critical patent/JP3104319B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP21842591A 1991-08-29 1991-08-29 不揮発性記憶装置 Expired - Lifetime JP3104319B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP21842591A JP3104319B2 (ja) 1991-08-29 1991-08-29 不揮発性記憶装置
DE69230124T DE69230124T2 (de) 1991-08-29 1992-08-11 Permanentspeicher
EP92307318A EP0529862B1 (en) 1991-08-29 1992-08-11 Non-volatile memories
US07/928,442 US5345416A (en) 1991-08-29 1992-08-12 High density nonvolatile memory and decoder of the same
KR1019920015524A KR100258039B1 (ko) 1991-08-29 1992-08-28 불휘발성 기억장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21842591A JP3104319B2 (ja) 1991-08-29 1991-08-29 不揮発性記憶装置

Publications (2)

Publication Number Publication Date
JPH0555530A JPH0555530A (ja) 1993-03-05
JP3104319B2 true JP3104319B2 (ja) 2000-10-30

Family

ID=16719714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21842591A Expired - Lifetime JP3104319B2 (ja) 1991-08-29 1991-08-29 不揮発性記憶装置

Country Status (5)

Country Link
US (1) US5345416A (enExample)
EP (1) EP0529862B1 (enExample)
JP (1) JP3104319B2 (enExample)
KR (1) KR100258039B1 (enExample)
DE (1) DE69230124T2 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1032034A1 (en) * 1992-01-22 2000-08-30 Macronix International Co., Ltd. Method of making memory device
JPH07147095A (ja) * 1993-03-31 1995-06-06 Sony Corp 半導体不揮発性記憶装置およびデコーダ回路
US5432730A (en) * 1993-12-20 1995-07-11 Waferscale Integration, Inc. Electrically programmable read only memory array
JPH07235650A (ja) * 1993-12-27 1995-09-05 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5526306A (en) * 1994-02-10 1996-06-11 Mega Chips Corporation Semiconductor memory device and method of fabricating the same
JP3260761B2 (ja) * 1994-09-13 2002-02-25 マクロニクス インターナショナル カンパニイ リミテッド フラッシュ・イーピーロム集積回路構造
DE69435007T2 (de) * 1994-09-13 2008-04-10 Macronix International Co. Ltd. FLASH EPROM integrierte Schaltungsarchitektur
US5583808A (en) * 1994-09-16 1996-12-10 National Semiconductor Corporation EPROM array segmented for high performance and method for controlling same
JP2643896B2 (ja) * 1995-02-23 1997-08-20 日本電気株式会社 半導体メモリ
US5646886A (en) * 1995-05-24 1997-07-08 National Semiconductor Corporation Flash memory having segmented array for improved operation
WO1996041346A1 (en) * 1995-06-07 1996-12-19 Macronix International Co., Ltd. Automatic programming algorithm for page mode flash memory with variable programming pulse height and pulse width
KR0172378B1 (ko) * 1995-12-30 1999-03-30 김광호 불휘발성 반도체 메모리소자
US5682350A (en) * 1996-03-29 1997-10-28 Aplus Integrated Circuits, Inc. Flash memory with divided bitline
DE69629315T2 (de) * 1996-05-22 2004-04-22 Macronix International Co. Ltd., Hsinchu Flashspeicheranordnung mit löschungsunterbrechungslogik unter verwendung von mehreren prüfpunkten
US5805501A (en) * 1996-05-22 1998-09-08 Macronix International Co., Ltd. Flash memory device with multiple checkpoint erase suspend logic
JP2000504504A (ja) * 1997-02-12 2000-04-11 ヒュンダイ エレクトロニクス アメリカ インコーポレイテッド 不揮発性メモリ構造
US6278649B1 (en) 2000-06-30 2001-08-21 Macronix International Co., Ltd. Bank selection structures for a memory array, including a flat cell ROM array
JP3640177B2 (ja) * 2001-06-04 2005-04-20 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3594001B2 (ja) 2001-07-23 2004-11-24 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3622697B2 (ja) 2001-07-23 2005-02-23 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP2003282742A (ja) * 2002-03-22 2003-10-03 Nec Electronics Corp 半導体記憶装置及び書き込みと読み出しの制御方法
JP4044401B2 (ja) * 2002-09-11 2008-02-06 株式会社東芝 半導体記憶装置
US20080237696A1 (en) * 2004-07-01 2008-10-02 Chih-Hsin Wang Alignment protection in non-volatile memory and array
FR2881565B1 (fr) * 2005-02-03 2007-08-24 Atmel Corp Circuits de selection de ligne binaire pour memoires non volatiles
JP2007109752A (ja) * 2005-10-12 2007-04-26 Oki Electric Ind Co Ltd 不揮発性メモリ
KR100675300B1 (ko) * 2006-01-06 2007-01-29 삼성전자주식회사 캐패시터가 없는 동적 메모리 셀을 구비한 반도체 메모리장치 및 이 장치의 데이터 라이트 및 리드 방법
US8179708B2 (en) * 2009-02-18 2012-05-15 Atmel Corporation Anti-cross-talk circuitry for ROM arrays
JP5528869B2 (ja) * 2010-03-23 2014-06-25 スパンション エルエルシー 不揮発性半導体記憶装置及びその読み出し方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6363197A (ja) * 1986-09-03 1988-03-19 Toshiba Corp 半導体記憶装置
US4819207A (en) * 1986-09-30 1989-04-04 Kabushiki Kaisha Toshiba High-speed refreshing rechnique for highly-integrated random-access memory
KR920009054B1 (ko) * 1988-12-28 1992-10-13 가부시키가이샤 도시바 불휘발성 반도체메모리
JP2515009B2 (ja) * 1989-01-13 1996-07-10 株式会社東芝 不揮発性半導体メモリの製造方法
EP0403822B1 (en) * 1989-06-19 1994-10-12 Texas Instruments Incorporated Circuit and method for conditioning erased eeproms prior to programming
JP2565213B2 (ja) * 1989-10-27 1996-12-18 ソニー株式会社 読み出し専用メモリ装置
JP2807304B2 (ja) * 1990-02-19 1998-10-08 株式会社東芝 不揮発性半導体装置
US5204835A (en) * 1990-06-13 1993-04-20 Waferscale Integration Inc. Eprom virtual ground array

Also Published As

Publication number Publication date
DE69230124T2 (de) 2000-04-20
JPH0555530A (ja) 1993-03-05
EP0529862B1 (en) 1999-10-13
KR100258039B1 (ko) 2000-06-01
DE69230124D1 (de) 1999-11-18
EP0529862A3 (enExample) 1995-06-28
KR930005034A (ko) 1993-03-23
US5345416A (en) 1994-09-06
EP0529862A2 (en) 1993-03-03

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