DE69230124T2 - Permanentspeicher - Google Patents

Permanentspeicher

Info

Publication number
DE69230124T2
DE69230124T2 DE69230124T DE69230124T DE69230124T2 DE 69230124 T2 DE69230124 T2 DE 69230124T2 DE 69230124 T DE69230124 T DE 69230124T DE 69230124 T DE69230124 T DE 69230124T DE 69230124 T2 DE69230124 T2 DE 69230124T2
Authority
DE
Germany
Prior art keywords
permanent storage
permanent
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69230124T
Other languages
English (en)
Other versions
DE69230124D1 (de
Inventor
Akira Nakagawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69230124D1 publication Critical patent/DE69230124D1/de
Application granted granted Critical
Publication of DE69230124T2 publication Critical patent/DE69230124T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
DE69230124T 1991-08-29 1992-08-11 Permanentspeicher Expired - Fee Related DE69230124T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21842591A JP3104319B2 (ja) 1991-08-29 1991-08-29 不揮発性記憶装置

Publications (2)

Publication Number Publication Date
DE69230124D1 DE69230124D1 (de) 1999-11-18
DE69230124T2 true DE69230124T2 (de) 2000-04-20

Family

ID=16719714

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69230124T Expired - Fee Related DE69230124T2 (de) 1991-08-29 1992-08-11 Permanentspeicher

Country Status (5)

Country Link
US (1) US5345416A (de)
EP (1) EP0529862B1 (de)
JP (1) JP3104319B2 (de)
KR (1) KR100258039B1 (de)
DE (1) DE69230124T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69231356T2 (de) * 1992-01-22 2000-12-28 Macronix Int Co Ltd Nichtflüchtige Speicherzelle und Anordnungsarchitektur
JPH07147095A (ja) * 1993-03-31 1995-06-06 Sony Corp 半導体不揮発性記憶装置およびデコーダ回路
US5432730A (en) * 1993-12-20 1995-07-11 Waferscale Integration, Inc. Electrically programmable read only memory array
JPH07235650A (ja) * 1993-12-27 1995-09-05 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5526306A (en) * 1994-02-10 1996-06-11 Mega Chips Corporation Semiconductor memory device and method of fabricating the same
EP1403878B1 (de) * 1994-09-13 2007-07-25 Macronix International Co., Ltd. FLASH EPROM integrierte Schaltungsarchitektur
JP3260761B2 (ja) * 1994-09-13 2002-02-25 マクロニクス インターナショナル カンパニイ リミテッド フラッシュ・イーピーロム集積回路構造
US5583808A (en) * 1994-09-16 1996-12-10 National Semiconductor Corporation EPROM array segmented for high performance and method for controlling same
JP2643896B2 (ja) * 1995-02-23 1997-08-20 日本電気株式会社 半導体メモリ
US5646886A (en) * 1995-05-24 1997-07-08 National Semiconductor Corporation Flash memory having segmented array for improved operation
JP3807744B2 (ja) * 1995-06-07 2006-08-09 マクロニクス インターナショナル カンパニイ リミテッド 可変プログラムパルス高及びパルス幅によるページモードフラッシュメモリ用自動プログラミングアルゴリズム
KR0172378B1 (ko) * 1995-12-30 1999-03-30 김광호 불휘발성 반도체 메모리소자
US5682350A (en) * 1996-03-29 1997-10-28 Aplus Integrated Circuits, Inc. Flash memory with divided bitline
US5805501A (en) * 1996-05-22 1998-09-08 Macronix International Co., Ltd. Flash memory device with multiple checkpoint erase suspend logic
DE69629315T2 (de) * 1996-05-22 2004-04-22 Macronix International Co. Ltd., Hsinchu Flashspeicheranordnung mit löschungsunterbrechungslogik unter verwendung von mehreren prüfpunkten
WO1998035344A2 (en) * 1997-02-12 1998-08-13 Hyundai Electronics America, Inc. A nonvolatile memory structure
US6278649B1 (en) 2000-06-30 2001-08-21 Macronix International Co., Ltd. Bank selection structures for a memory array, including a flat cell ROM array
JP3640177B2 (ja) * 2001-06-04 2005-04-20 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3594001B2 (ja) 2001-07-23 2004-11-24 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3622697B2 (ja) 2001-07-23 2005-02-23 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP2003282742A (ja) * 2002-03-22 2003-10-03 Nec Electronics Corp 半導体記憶装置及び書き込みと読み出しの制御方法
JP4044401B2 (ja) * 2002-09-11 2008-02-06 株式会社東芝 半導体記憶装置
US20080237696A1 (en) * 2004-07-01 2008-10-02 Chih-Hsin Wang Alignment protection in non-volatile memory and array
FR2881565B1 (fr) * 2005-02-03 2007-08-24 Atmel Corp Circuits de selection de ligne binaire pour memoires non volatiles
JP2007109752A (ja) * 2005-10-12 2007-04-26 Oki Electric Ind Co Ltd 不揮発性メモリ
KR100675300B1 (ko) * 2006-01-06 2007-01-29 삼성전자주식회사 캐패시터가 없는 동적 메모리 셀을 구비한 반도체 메모리장치 및 이 장치의 데이터 라이트 및 리드 방법
US8179708B2 (en) * 2009-02-18 2012-05-15 Atmel Corporation Anti-cross-talk circuitry for ROM arrays
JP5528869B2 (ja) * 2010-03-23 2014-06-25 スパンション エルエルシー 不揮発性半導体記憶装置及びその読み出し方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6363197A (ja) * 1986-09-03 1988-03-19 Toshiba Corp 半導体記憶装置
US4819207A (en) * 1986-09-30 1989-04-04 Kabushiki Kaisha Toshiba High-speed refreshing rechnique for highly-integrated random-access memory
US5095461A (en) * 1988-12-28 1992-03-10 Kabushiki Kaisha Toshiba Erase circuitry for a non-volatile semiconductor memory device
JP2515009B2 (ja) * 1989-01-13 1996-07-10 株式会社東芝 不揮発性半導体メモリの製造方法
DE69013237T2 (de) * 1989-06-19 1995-02-23 Texas Instruments Inc Schaltung und Verfahren zur Vorbereitung gelöschter EEPROMS vor der Programmierung.
JP2565213B2 (ja) * 1989-10-27 1996-12-18 ソニー株式会社 読み出し専用メモリ装置
JP2807304B2 (ja) * 1990-02-19 1998-10-08 株式会社東芝 不揮発性半導体装置
US5204835A (en) * 1990-06-13 1993-04-20 Waferscale Integration Inc. Eprom virtual ground array

Also Published As

Publication number Publication date
US5345416A (en) 1994-09-06
EP0529862B1 (de) 1999-10-13
KR930005034A (ko) 1993-03-23
JPH0555530A (ja) 1993-03-05
DE69230124D1 (de) 1999-11-18
JP3104319B2 (ja) 2000-10-30
KR100258039B1 (ko) 2000-06-01
EP0529862A2 (de) 1993-03-03
EP0529862A3 (de) 1995-06-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee