JP3041931B2 - Ｍｉｓトランジスタを備えた半導体集積回路 - Google Patents
Ｍｉｓトランジスタを備えた半導体集積回路Info
- Publication number
- JP3041931B2 JP3041931B2 JP02271555A JP27155590A JP3041931B2 JP 3041931 B2 JP3041931 B2 JP 3041931B2 JP 02271555 A JP02271555 A JP 02271555A JP 27155590 A JP27155590 A JP 27155590A JP 3041931 B2 JP3041931 B2 JP 3041931B2
- Authority
- JP
- Japan
- Prior art keywords
- mis transistor
- conductivity type
- contact diffusion
- region
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/610,620 US5121179A (en) | 1990-10-08 | 1990-11-08 | Higher impedance pull-up and pull-down input protection resistors for MIS transistor integrated circuits |
| EP19900312287 EP0427565A3 (en) | 1989-11-10 | 1990-11-09 | Integrated circuit having mis transistor |
| KR1019900018159A KR0164591B1 (ko) | 1989-11-10 | 1990-11-10 | 집적회로 |
| TW081107078A TW273041B (cg-RX-API-DMAC7.html) | 1989-11-10 | 1990-11-16 | |
| TW081107077A TW230831B (cg-RX-API-DMAC7.html) | 1989-11-10 | 1990-11-16 | |
| US07/819,253 US5227327A (en) | 1989-11-10 | 1992-01-10 | Method for making high impedance pull-up and pull-down input protection resistors for active integrated circuits |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29262789 | 1989-11-10 | ||
| JP1-292627 | 1989-11-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03224270A JPH03224270A (ja) | 1991-10-03 |
| JP3041931B2 true JP3041931B2 (ja) | 2000-05-15 |
Family
ID=17784249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02271555A Expired - Lifetime JP3041931B2 (ja) | 1989-11-10 | 1990-10-08 | Ｍｉｓトランジスタを備えた半導体集積回路 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3041931B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR0164591B1 (cg-RX-API-DMAC7.html) |
| TW (2) | TW273041B (cg-RX-API-DMAC7.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0685160A (ja) * | 1992-08-31 | 1994-03-25 | Nec Corp | 半導体集積回路装置 |
| CN119213557A (zh) * | 2022-05-19 | 2024-12-27 | 株式会社索思未来 | 半导体装置 |
| KR20250085122A (ko) | 2023-12-05 | 2025-06-12 | 조대훈 | 안경의 탄성경첩 |
-
1990
- 1990-10-08 JP JP02271555A patent/JP3041931B2/ja not_active Expired - Lifetime
- 1990-11-10 KR KR1019900018159A patent/KR0164591B1/ko not_active Expired - Fee Related
- 1990-11-16 TW TW081107078A patent/TW273041B/zh active
- 1990-11-16 TW TW081107077A patent/TW230831B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW230831B (cg-RX-API-DMAC7.html) | 1994-09-21 |
| KR0164591B1 (ko) | 1999-01-15 |
| JPH03224270A (ja) | 1991-10-03 |
| KR910010704A (ko) | 1991-06-29 |
| TW273041B (cg-RX-API-DMAC7.html) | 1996-03-21 |
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