TW273041B - - Google Patents

Info

Publication number
TW273041B
TW273041B TW081107078A TW81107078A TW273041B TW 273041 B TW273041 B TW 273041B TW 081107078 A TW081107078 A TW 081107078A TW 81107078 A TW81107078 A TW 81107078A TW 273041 B TW273041 B TW 273041B
Authority
TW
Taiwan
Application number
TW081107078A
Other languages
Chinese (zh)
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of TW273041B publication Critical patent/TW273041B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85Complementary IGFETs, e.g. CMOS
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
TW081107078A 1989-11-10 1990-11-16 TW273041B (cg-RX-API-DMAC7.html)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29262789 1989-11-10
JP02271555A JP3041931B2 (ja) 1989-11-10 1990-10-08 Misトランジスタを備えた半導体集積回路

Publications (1)

Publication Number Publication Date
TW273041B true TW273041B (cg-RX-API-DMAC7.html) 1996-03-21

Family

ID=17784249

Family Applications (2)

Application Number Title Priority Date Filing Date
TW081107078A TW273041B (cg-RX-API-DMAC7.html) 1989-11-10 1990-11-16
TW081107077A TW230831B (cg-RX-API-DMAC7.html) 1989-11-10 1990-11-16

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW081107077A TW230831B (cg-RX-API-DMAC7.html) 1989-11-10 1990-11-16

Country Status (3)

Country Link
JP (1) JP3041931B2 (cg-RX-API-DMAC7.html)
KR (1) KR0164591B1 (cg-RX-API-DMAC7.html)
TW (2) TW273041B (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0685160A (ja) * 1992-08-31 1994-03-25 Nec Corp 半導体集積回路装置
CN119213557A (zh) * 2022-05-19 2024-12-27 株式会社索思未来 半导体装置
KR20250085122A (ko) 2023-12-05 2025-06-12 조대훈 안경의 탄성경첩

Also Published As

Publication number Publication date
JP3041931B2 (ja) 2000-05-15
TW230831B (cg-RX-API-DMAC7.html) 1994-09-21
KR0164591B1 (ko) 1999-01-15
JPH03224270A (ja) 1991-10-03
KR910010704A (ko) 1991-06-29

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