JP2978286B2 - 空間的光変調装置とその製造法 - Google Patents

空間的光変調装置とその製造法

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Publication number
JP2978286B2
JP2978286B2 JP3158722A JP15872291A JP2978286B2 JP 2978286 B2 JP2978286 B2 JP 2978286B2 JP 3158722 A JP3158722 A JP 3158722A JP 15872291 A JP15872291 A JP 15872291A JP 2978286 B2 JP2978286 B2 JP 2978286B2
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JPH05196880A (ja
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ジェイ.ホーンベック ラリィ
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Texas Instruments Inc
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Texas Instruments Inc
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00Details of colour television systems
    • H04N9/12Picture reproducers
    • H04N9/31Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
    • H04N9/3141Constructional details thereof
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/0841Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/37Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being movable elements
    • G09F9/372Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being movable elements the positions of the elements being controlled by the application of an electric field
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00Details of colour television systems
    • H04N9/12Picture reproducers
    • H04N9/31Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
    • H04N9/3102Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM] using two-dimensional electronic spatial light modulators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S359/00Optical: systems and elements
    • Y10S359/90Methods

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Optics & Photonics (AREA)
  • Theoretical Computer Science (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Transforming Electric Information Into Light Information (AREA)

Description

【発明の詳細な説明】
【0001】
【産業上の利用分野】本発明は変形可能鏡装置に関す
る。さらに詳細にいえば、本発明は反射表面とは異なる
平面の中にトーション・ヒンジが構成された変形可能鏡
装置に関する。
【0002】
【従来の技術と問題点】変形可能鏡装置(DMD)は光
偏向技術の分野において多くの用途がある。動作のさい
には、この装置は固定軸のまわりに回転する小さな鏡に
類似している。この回転により、光がこの回転の制御の
下で偏向する。したがって、ある応用では、画素と呼ば
れる個別のDMDが選択的に回転される時、種々の目的
に対するパターンを作ることができるように、DMDの
アレイが配置される。
【0003】このDMD装置は、典型的な場合には、暗
視野投影光学装置に用いられ、および、例えば、高品位
テレビジョン装置(HDTV)に用いることができる。
HDTVへの応用では、要求された鮮明度をうるため
に、画素の大きなアレイが必要である。これらの大きな
画素アレイは、個々のDMD画素を高密度に配列するこ
とを要求し、かつ、明るさを最大にしおよび光散乱を小
さくしてコントラストを最大にするために、高い変調効
率が要求される。
【0004】光散乱は、光で照射された回転しない(死
んだ)表面面積領域の大きさによって一部分は制御され
る。この死んだ面積領域が生ずる理由は、回転可能DM
D画素を支持するトーション・ヒンジをうるのに、それ
が用いられるからである。このようなトーション・ヒン
ジの1つの構成と構造は、1987年5月5日受付の本
出願人名の米国特許第4,662,746号に開示され
ている。この特許は、下記において、参考として本発明
に取り込まれている。
【0005】したがって、この分野において、高密度と
高変調効率とを組み合わせて有し、かつ、固有の光散乱
が小さい、DMDマトリックスが要請されている。
【0006】さらにこの分野において、与えられた密度
のDMD画素に対し、光反射面積領域を最大にする構造
体が要請されている。
【0007】HDTV応用を支援するDMDアーキテク
チャに対し、さらに要請が存在する。
【0008】
【従来の技術の問題点を解決するための手段】空間的光
変調器装置が、回転可能鏡表面の下のトーション・ヒン
ジで、基板の中の1つの位置、例えば、アドレス電子装
置と表面との間に構成される。そこでは、表面「死ん
だ」面積領域は大幅に小さい。構造体を用いて、次に、
いくつかの技術的利点を有するDMD装置を構成するこ
とができる。第1の技術的利点は、この構造体の光散乱
が小さい(コントラストが大きい)ことである。その理
由は、トーション・ヒンジにより生ずる光散乱がないか
らである。この構造体のまた別の利点は、回転可能鏡に
よって占められる表面面積領域が大きいことであり、そ
れにより、より大きな変調効率(より大きな明るさ)が
えられる。本発明のまた別の技術上の利点は、画素素子
のいくつかの異なる配置がえられることである。これら
の画素素子はすべて制御可能な偏向性を有し、かつ、反
射表面以外の表面の中に含まれる、機械的に連結された
回転可能支持体を有する基板の反射表面上にある。
【0009】多重層鏡表面およびヒンジは、スピン沈
着、スパッタ沈着の組み合わせと、いくつかのプラズマ
・エッチング段階および光食刻段階とを組み合わせた、
複数個の段階で作成される。
【0010】
【実施例】本発明およびその利点は、添付図面を参照し
ての下記説明により、さらに完全に理解することができ
る。
【0011】図1は、12ミクロン画素ピッチを有する
従来の技術の45度2安定トーション・ビーム・アレイ
10を示す。画素100のおのおのは、支持体102に
よって基板の上に保持されたヒンジ101によって、回
転しうるように保持される。
【0012】先行技術による構成体が、図2に示された
構造体と比較されるべきである。図2には、隠されたヒ
ンジ・アレイ20が示され、そしてまたこの構造体は1
2ミクロンのピッチを有する。この隠されたヒンジ・ア
ーキテクチャを上から見た時、図2に示されているよう
に、おのおのの画素の方形トーション・ビーム反射表面
200とビーム支持ポスト201だけが見える。素子1
00(図1)と素子200(図2)とを比較すれば、隠
されたヒンジにより、与えられた画素寸法に対し、より
大きな回転可能反射表面のえられることがはっきりとわ
かる。
【0013】図3の点線によって、下にあるヒンジと、
アドレス電極と、着地電極とが示されている。ビーム支
持ポスト201は、ビーム200を下にあるトーション
・ヒンジ401に固く連結する。下にあるヒンジと電極
の詳細図が、図4に示されている。ビーム支持ポスト2
01は、ポスト406に連結されたヒンジ401の制御
の下で、ビーム200を回転可能にする。このことによ
り、ポスト403によって支持された電極の制御の下
で、回転可能表面(ビーム)200を回転できるように
する。ビーム200は着地電極405と接触して着地す
る。接触体402は基板を貫いて延長され、そして下に
あるアドレス電極と接触する。この装置の構成と動作
が、下記で説明されるであろう。
【0014】ヒンジに沿っての横断面図が、図5aおよ
び図5bに示されている。図5aはヒンジに沿っての横
断面図で、ヒンジ支持ポスト406と、ヒンジ401
と、ビーム200とが示されている。図5bはヒンジ4
01と直角の方向の横断面図であって、アドレス電極4
04と、電極支持ポスト403とが示されている。保護
用酸化物層501と、金属層2(502)と、CMOS
回路および基板層503とがまた示されている。
【0015】図6は、ビーム200の着地角−θL への
回転200aと、着地角+θL への回転200bを示し
ている。また、移動200a,200bを制御するアド
レス電極404と、ビーム200のシー・ソー振動の他
の端部に配置された着地電極405が示されている。ビ
ーム200の回転移動を制御する方法は、改良された2
安定DMDアドレス指定回路および方法、の名称の下記
の出願中特許に詳細に開示されている。
【0016】ここで一時的に本筋を離れると、図4に示
されているように、アドレス電極404の間にヒンジ4
01を配置することによって、アドレス電極に対してよ
り小さな空間が利用できる。けれども、このことの効果
は、アドレス電圧の要請に関して無視できる。アドレス
電極に対して失われる面積領域はほぼゼロのモーメント
・アームを有し、したがって、アドレス電極により働く
トルクはわずかに小さくなるだけである。
【0017】隠されたヒンジ・アーキテクチャは、ヒン
ジ・スペーサとビーム・スペーサとから成る、2スペー
サ・プロセスである。ヒンジ・スペーサは薄い(〜0.
5μm)層である。それが除去される時、その結果えら
れる空隙により、ヒンジは自由に回転することができ
る。ビーム・スペーサは厚く(〜1.5μm)、そして
ビーム200の最終的角度回転を決定する。薄いヒンジ
と厚い電極は、下記の米国特許第4,662,746号
に開示されている埋め込みヒンジ工程を用いて、単一の
プラズマ・アルミニウム・エッチで作成される。
【0018】隠されたヒンジ・アーキテクチャのための
工程順序が、図7a〜図7dに示されている。この工程
は、5つの層(ヒンジ・スペーサ、ヒンジ、電極、ビー
ム・スペーサ、およびビーム)の工程である。この工程
は従来の4層工程(電極、スペーサ、ヒンジ、ビーム)
と比較されるべきである。
【0019】この工程は、完成したアドレス回路503
で開始する。このアドレス回路503は、アドレス回路
の保護用酸化物501の中に作成された接触体開口部を
有する。典型的には、このアドレス回路は2金属層/ポ
リCMOS工程である。接触体開口部により、第2レベ
ル金属(金属2)502接着パッドと、金属2アドレス
回路出力接続点と、へのアクセスが可能となる。
【0020】アドレス回路の上に、ヒンジ・スペーサ7
01がスピン沈着され、そしてパターンに作られて穴7
02が作成される。穴702は、ヒンジ支持ポストと、
電極支持ポストと、接触体を作成する。このスペーサの
厚さは典型的には0.5μmであり、そしてこのスペー
サは、後の処理工程の間に、流動および起泡の出来るこ
とを防止するために、200℃の温度で硬化された、ポ
ジティブ・フォトレジスト・ディープUVである。
【0021】図7bに示されているように、次の2つの
層703および704が、いわゆる、埋込みヒンジ工程
によって作成される。ヒンジを作成するアルミニウム合
金が、ヒンジ・スペーサの上に、スパッタ・沈着され
る。この合金は、典型的には、厚さが750オングスト
ロームであり、そして0.2%Ti,1%Siおよび残
りはAlで構成される。マスク用酸化物がプラズマ沈着
され、そしてヒンジ401の形状にパターンに作られ
る。それから、このヒンジ酸化物が第2のアルミニウム
合金層704によって埋込まれる。この第2アルミニウ
ム合金層704(典型的な場合の厚さは3000オング
ストローム)は電極を作成するためのものである。
【0022】次に、マスク用酸化物がプラズマ沈着さ
れ、そして電極404と、電極支持ポスト406と、ビ
ーム接触体金属405との形状にパターンに作られる。
【0023】最後に、単一のプラズマ・アルミニウム・
エッチングを用いて、ヒンジと、電極と、支持ポスト
と、ビーム接触体金属とのパターンが作られる。ヒンジ
領域の上の電極金属がエッチングによって除去され、埋
め込まれたヒンジ酸化物が露出される。この酸化物はエ
ッチング停止体としての役割を果たす。プラズマ・アル
ミニウム・エッチングが完了した時、薄いヒンジ金属7
03の領域と厚い電極金属704の領域とが、同時にパ
ターンに作られる。それから、マスク用酸化物がプラズ
マ・エッチングによって除去される。
【0024】次に、図7Cに示されているように、ビー
ム・スペーサ705がヒンジと電極との上にスピン沈着
され、そしてパターンに作られて穴が作成される。この
穴はビーム支持ポスト201を作成するであろう。スペ
ーサ705はトーション・ビーム角度偏向を決定し、そ
してその厚さの典型的な値は1.5ミクロンであり、そ
してそれはポジティブ・フォトレジストである。後での
処理段階における流動と気泡発生とを防止するために、
それは180℃の温度で硬化されたディープUVであ
る。この加熱中に、ヒンジ・スペーサ701の劣化は起
こらない。それは、ヒンジ・スペーサはさらに高い温度
(200℃)で硬化されたからである。
【0025】最後に、ビーム200(その厚さの典型的
な値は4000オングストロームである)を作成するた
めのアルミニウム合金が、ビーム・スペーサ705の上
にスパッタ沈着される。次に、マスク用酸化物707が
プラズマ沈着され、そしてビームの形状にパターンに作
られる。それから、このビームにプラズマ・エッチング
が行なわれて、ビームと、ビーム支持ポストとが作成さ
れる。
【0026】これで、ウエハ段階での処理が完了する。
ビーム200の上のマスク用酸化物707が所定の位置
に残される。それから、このウエハはPMMAで被覆さ
れ、そして切断されてチップ・アレイが作られ、そして
クロロベンゼンでスピン洗浄が行なわれる。最後に、チ
ップがプラズマ・エッチング室の中に入れられる。この
プラズマ・エッチング室の中で、マスク用酸化物707
が除去され、そしてスペーサ層701とスペーサ層70
5とが完全に除去され、図7dに示されているように、
ヒンジとビームの下に空隙が作成される。
【0027】ヒンジを自由にするために下を切り取る必
要な量の決定は、変更されたドロップアウト構造体を用
いることによって行なわれる。ドロップアウト構造体
は、米国特許第4,566,935号に最初に開示され
た。この米国特許は、本発明に参考として取り込まれて
いる。この変更されたドロップアウト構造体は、ヒンジ
がいずれのヒンジ支持ポストにも連結されていないこと
を除けば、本出願の図5aの構造体で構成される。ビー
ム・スペーサ705が取り去られる時、そして十分な量
のヒンジ・スペーサ701が取り去られてヒンジが自由
に回転できる時、ビーム200は一方側へ降下し、その
端部が一方の電極の上の位置を占めるであろう。また
は、ヒンジと電極のアンダカットの量の相互関係は、従
来のドロップアウト構造体を用いることによって、およ
び残留するスペーサの量を観察するために金属層を除去
することによって、行なうことができる。
【0028】隠されたヒンジ・アーキテクチャはいくつ
かの利点を有する。これらの利点のうちのいくつかは明
らかであり、そしていくつかはわかりにくい。第1は、
前記のように、ビームの下にヒンジを配置することによ
り、回転可能鏡によって占められる表面面積領域が増大
し、それにより変調効率が大きくなり、したがって、表
示がより明るくなることである。第2は、隠されたヒン
ジは投射光から遮蔽され、したがって、投射レンズの瞳
の中へ光を散乱することができないことである。したが
って、コントラスト比は増大する。第3は、同じ寸法の
画素に対し、隠されたヒンジ・アーキテクチャにより、
明るさとコントラストとを小さくすることなく、トーシ
ョン・ヒンジをより長くすることができ、したがって、
コンプライアンスを大きくし、かつ、アドレス電圧の要
請を低下させることである。
【0029】第4は、ヒンジ・スペーサは下にあるアド
レス回路を平らにするから、最終的アドレス回路のメタ
ライゼーションに、特別の平面化段階(例えば、保護用
酸化物のレジスト・エツチ・バック平面化段階)は必要
でないことである。下にある構造体による凸凹を平面化
することは、電極金属の中の残留金属フィラメントを防
止するために、および金属2の中に作成されたアルミニ
ウムの小さな山を平らにするために、異方的ヒンジ/電
極エッチングの前に必要である。
【0030】第5は、着地電極はアドレス回路から空気
で分離されており、したがって、下にあるアドレス回路
への高電圧リセット・パルスのフィード・スルーが小さ
くなることである。この結合は、もしそれが制御されな
いならば、アドレス・トランジスタのゲートに電圧スパ
イクを生ずることがあり、それにより、このトランジス
タが誤った時刻に一時的にオンになる。また、この空気
分離により、保護用酸化物を通しての誘電体ブレークダ
ウンの可能性は小さくなる。
【0031】第6は、アドレス電極が空気分離されるか
ら、それらは小さな静電容量を有することである。した
がって、フレーム・アドレスDMD(米国特許第4,6
15,595号)を組み立てることは隠されたヒンジ・
アーキテクチャで可能である。この場合には、ビームよ
りはむしろアドレス電極が、電荷アドレスされる。この
ことは、ビームを電気的に分離する必要なしに、フレー
ム・アドレス・トーション・ビーム・アーキテクチャの
製造を可能にする。
【0032】45度画素アーキテクチャに対する隠され
たヒンジが示されたが、図8a〜図8dに示されている
ように、ヒンジのアーキテクチャを変えることによっ
て、他の画素アーキテクチャも可能である。隠されたヒ
ンジが屈曲ビーム画素に対して用いられる時、(図8
C)ビーム支持ポスト201はλ/4の距離(その典型
的な値は1500オンクストロームないし2000オン
グストローム)だけ垂直に移動する。5000オングス
トローム・ヒンジ・スペーサ空隙は、この垂直移動より
大きな移動を許容する。屈曲ビーム画素は、位相のみの
変調器として用いることができる。ヒンジを隠すことの
効果は、振幅変調成分を小さくする不活性バックグラウ
ンドを小さくすることであり、そしてこの屈曲ビームを
理想的位相のみ変調器に近づける。
【0033】本明細書は、特定の前記実施例を参照して
本発明を説明したけれども、本発明は前記説明に限定さ
れるものではない。前記説明に基づけば、当業者にとっ
て、前記実施例に種々の変更を行なうこと、およびま
た、別の実施例の可能であること、はすぐにわかるであ
ろう。したがって、このような変更実施例は、すべて本
発明の範囲内に包含されるものである。
【0034】以上の説明に関して更に以下の項を開示す
る。 (1) 制御可能に回転可能な定められた面積領域を有
し、かつ、ベース層と、前記制御可能に回転可能な面積
領域を定める分離層と、前記回転可能面積領域を保持す
るためにおよび前記回転可能面積領域を前記ベース層に
関して定められた移動の範囲内で移動することを可能に
するために前記ベース層によって保持されかつ前記回転
可能面積領域に連結され、および前記回転可能層の平面
から分離された平面内に配置されたヒンジと、を有する
空間的光変調装置。
【0035】(2) 第1項において、前記ベース層が前
記回転可能領域の前記回転を制御する信号をうるための
離散した面積領域を有する前記装置。
【0036】(3) 第2項において、前記離散面積領域
がアドレス電極を有する前記装置。
【0037】(4) 第3項において、前記離散面積領域
がアドレス回路をさらに有する前記装置。
【0038】(5) 第2項において、制御回路を有する
基板層と、前記制御回路から前記離散面積領域へ信号を
通信するための相互接続構造体と、をさらに有する前記
装置。
【0039】(6) 第5項において、前記制御可能がC
MOS技術を用いて構成される前記装置。
【0040】(7) おのおのの画素が少なくとも2つの
状態に個別に回転可能である画素のアレイであって、前
記アレイのすべての前記画素を支持するベース構造体を
前記アレイが有し、かつ、前記ベースの平面から分離さ
れた平面の中に前記アレイが保持され、前記画素のおの
おのが表面領域を定め、かつ、前記ベース構造体と前記
画素との両方から分離されおよび前記ベースに関して前
記画素が変形できるように前記ベース構造体を前記画素
に連結するためにそれらの間に配置された中間部分を有
する、前記画素の前記アレイ。
【0041】(8) 第7項において、HDTV装置をさ
らに有し、かつ、前記アレイが高密度テレビジョン受信
器の可視表示装置である前記装置。
【0042】(9) 第7項において、前記ベース構造体
が前記画素の前記回転を制御する信号を供給するための
離散した面積領域を有する前記装置。
【0043】(10) 第9項において、前記離散面積領域
がアドレス電極を有する前記装置。
【0044】(11) 第10項において、前記離散面積領
域がアドレス回路をさらに有する前記装置。
【0045】(12) 第10項において、制御回路を有す
る基板層と、前記制御回路から前記離散面積領域へ信号
を通信するための相互接続構造体と、をさらに有する前
記装置。
【0046】(13) 第12項において、前記制御回路が
CMOS技術を用いて構成される前記装置。
【0047】(14) おのおのの画素を個別に少なくとも
2つの状態に回転可能である画素のアレイを構成する方
法であって、前記アレイのすべての前記画素を支持する
ためのベース構造体を構成する段階と、前記アレイを前
記ベースの平面から分離された平面の中に保持する段階
と、を有し、かつ、前記保持段階が前記ベース構造体と
前記画素との両方から分離され、かつ、前記ベースに関
して前記画素を変形することができるように前記ベース
構造体を前記画素に連結するためにそれらの間に配置さ
れた、中間構造体を構成する段階を有する、前記画素の
前記アレイを構成する方法。
【0048】(15) 第14項において、前記アレイが高
密度テレビジョン装置の表示装置である前記方法。
【0049】(16) 第15項において、前記ベース構造
体を構成する前記段階が前記画素の前記回転を制御する
信号を供給するための離散した面積領域を設定する段
階、を有する前記方法。
【0050】(17) 第16項において、前記離散面積領
域がアドレス電極を有する前記方法。
【0051】(18) 第16項において、制御回路を有す
る基板層を設定する段階と、前記制御回路から前記離散
面積領域へ信号を通信するために前記離散面積領域を前
記制御回路に相互接続する段階と、をさらに有する前記
方法。
【0052】(19) その上にアドレス回路が作成される
基板と、第1支持ポストを定めるパターンに作られた第
1スペーサとを設定する段階と、前記第1スペーサの上
にアドレス電極および前記第1支持ポストに連結された
変形可能ヒンジを設定する段階と、前記変形可能ヒンジ
の上に第2支持ポストを定めるパターンに作られた第2
スペーサを沈着する段階と、前記第2ポストによって支
持される複数個の鏡を設定する段階と、前記第1スペー
サおよび前記第2スペーサを除去する段階と、を有する
変形可能鏡の製造法。
【0053】(20) 2安定変形可能鏡装置(DMD)画
素アーキテクチャが開示される。このアーキテクチャで
は、ヒンジはトーション・ビーム層とは異なる層の中に
配置される。このことにより、画素の寸法をより小さく
することができ、一方同時に、大きな部分活性面積領域
が保持され、かつ、高品位テレビジョンへの応用に用い
られる明るくかつ高密度の表示装置がえられる。
【0054】関連する出願 下記のすべての出願中特許は相互参照出願中特許であ
り、そしてこれらすべての出願中特許はテキサス・イン
スツルメント社に譲渡されている。これらの出願中特許
は同時に受け付けられた。これらの出願中特許は本特許
出願に参考として取り込まれている。 代理人明細書番号 TI−14568 多重レベル変形可能鏡装置。 TI−14643 改良された2安定DMDアドレス指定回路 と方法。 TI−14649 制御回路基板を有する集積DMDのための 改良されたアーキテクチャと処理。 TI−14715 フィールド更新された変形可能鏡装置。 本明細書においてまた参考とされおよび参考として取り
込まれているものは下記の通りである。 TI−13173A 空間的光変調器および方法。 1989年5月15日受付。シリアル番号 第335,049号。 TI−14481 空間的光変調器および方法。 1989年9月14日受付。シリアル番号 第408,355号。 米国特許第4,662,746号 空間的光変調器および方法。 1987年5月5日受付。 米国特許第4,566,935号 空間的光変調器および方法。 1986年1月28日受付。 米国特許第4,615,595号 フレーム・アドレスド空間的光変調器。 1986年10月7日受付。
【図面の簡単な説明】
【図1】先行技術によるアーキテクチャを有するDMD
画素のアレイ図。
【図2】多重レベル・ヒンジ・アーキテクチャを有する
DMD画素のアレイ図。
【図3】下にあるヒンジと電極と支持体とを点線で示し
た新規なアーキテクチャに対するフォーマット図。
【図4】下にある層のヒンジと電極と支持体の機構の配
置図。
【図5】図4の線5a−5aおよび線5b−5bに沿っ
てとられた、多層装置の横断面図。
【図6】アドレス電極の制御の下でのビームの2つの状
態における動作図。
【図7】多層装置の製造工程における各段階図。
【図8】多層装置のまた別の物理的配置図。
【符号の説明】
401 ヒンジ

Claims (2)

    (57)【特許請求の範囲】
  1. 【請求項1】 制御可能に回転可能な定められた面積領
    域を有し、かつ、 ベース層と、 前記制御可能に回転可能な面積領域を定める分離層と、 前記回転可能面積領域を保持するためにおよび前記回転
    可能面積領域を前記ベース層に関して定められた移動の
    範囲内で移動することを可能にするために前記ベース層
    によって保持されかつ前記回転可能面積領域に連結さ
    れ、および前記回転可能層の平面から分離された平面内
    に配置されたヒンジと、を有する空間的光変調装置。
  2. 【請求項2】 おのおのの画素を個別に少なくとも2つ
    の状態に回転可能である画素のアレイを構成する方法で
    あって、 前記アレイのすべての前記画素を支持するためのベース
    構造体を構成する段階と、 前記アレイを前記ベースの平面から分離された平面の中
    に保持する段階と、を有し、かつ、前記保持段階が前記
    ベース構造体と前記画素との両方から分離され、かつ、
    前記ベースに関して前記画素を変形することができるよ
    うに前記ベース構造体を前記画素に連結するためにそれ
    らの間に配置された、中間構造体を構成する段階を有す
    る、前記画素の前記アレイを構成する方法。
JP3158722A 1990-06-29 1991-06-28 空間的光変調装置とその製造法 Expired - Fee Related JP2978286B2 (ja)

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Application Number Priority Date Filing Date Title
US07/546,465 US5083857A (en) 1990-06-29 1990-06-29 Multi-level deformable mirror device
US546465 2000-04-10

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JPH05196880A JPH05196880A (ja) 1993-08-06
JP2978286B2 true JP2978286B2 (ja) 1999-11-15

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US5099353A (en) * 1990-06-29 1992-03-24 Texas Instruments Incorporated Architecture and process for integrating DMD with control circuit substrates
US5216537A (en) * 1990-06-29 1993-06-01 Texas Instruments Incorporated Architecture and process for integrating DMD with control circuit substrates
US5142405A (en) * 1990-06-29 1992-08-25 Texas Instruments Incorporated Bistable dmd addressing circuit and method
US5018256A (en) * 1990-06-29 1991-05-28 Texas Instruments Incorporated Architecture and process for integrating DMD with control circuit substrates
US5148157A (en) * 1990-09-28 1992-09-15 Texas Instruments Incorporated Spatial light modulator with full complex light modulation capability
US5233456A (en) * 1991-12-20 1993-08-03 Texas Instruments Incorporated Resonant mirror and method of manufacture
US5212582A (en) * 1992-03-04 1993-05-18 Texas Instruments Incorporated Electrostatically controlled beam steering device and method
US5312513A (en) * 1992-04-03 1994-05-17 Texas Instruments Incorporated Methods of forming multiple phase light modulators
US5289172A (en) * 1992-10-23 1994-02-22 Texas Instruments Incorporated Method of mitigating the effects of a defective electromechanical pixel

Also Published As

Publication number Publication date
EP0469293A1 (en) 1992-02-05
JPH05196880A (ja) 1993-08-06
US5600383A (en) 1997-02-04
KR920001967A (ko) 1992-01-30
DE69123300T2 (de) 1997-04-03
EP0469293B1 (en) 1996-11-27
DE69123300D1 (de) 1997-01-09
US5083857A (en) 1992-01-28
KR100230536B1 (ko) 1999-11-15

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