JP2888258B2 - 基板処理装置および基板処理方法 - Google Patents

基板処理装置および基板処理方法

Info

Publication number
JP2888258B2
JP2888258B2 JP2335671A JP33567190A JP2888258B2 JP 2888258 B2 JP2888258 B2 JP 2888258B2 JP 2335671 A JP2335671 A JP 2335671A JP 33567190 A JP33567190 A JP 33567190A JP 2888258 B2 JP2888258 B2 JP 2888258B2
Authority
JP
Japan
Prior art keywords
processing
gas
plasma
etching
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2335671A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04206719A (ja
Inventor
裕 雨宮
昭仁 戸田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2335671A priority Critical patent/JP2888258B2/ja
Priority to KR1019910021425A priority patent/KR100238623B1/ko
Priority to TW080109383A priority patent/TW285745B/zh
Priority to EP95110162A priority patent/EP0680070A1/en
Priority to EP91120577A priority patent/EP0488393B1/en
Priority to DE69124672T priority patent/DE69124672T2/de
Priority to US07/800,026 priority patent/US5385624A/en
Publication of JPH04206719A publication Critical patent/JPH04206719A/ja
Application granted granted Critical
Publication of JP2888258B2 publication Critical patent/JP2888258B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3345—Problems associated with etching anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3348—Problems associated with etching control of ion bombardment energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
JP2335671A 1990-11-30 1990-11-30 基板処理装置および基板処理方法 Expired - Lifetime JP2888258B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2335671A JP2888258B2 (ja) 1990-11-30 1990-11-30 基板処理装置および基板処理方法
KR1019910021425A KR100238623B1 (ko) 1990-11-30 1991-11-27 기판처리장치 및 기판처리방법
TW080109383A TW285745B (cg-RX-API-DMAC7.html) 1990-11-30 1991-11-28
EP91120577A EP0488393B1 (en) 1990-11-30 1991-11-29 Method for treating substrates
EP95110162A EP0680070A1 (en) 1990-11-30 1991-11-29 Apparatus and method for treating substrates
DE69124672T DE69124672T2 (de) 1990-11-30 1991-11-29 Verfahren zur Substratbearbeitung
US07/800,026 US5385624A (en) 1990-11-30 1991-11-29 Apparatus and method for treating substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2335671A JP2888258B2 (ja) 1990-11-30 1990-11-30 基板処理装置および基板処理方法

Publications (2)

Publication Number Publication Date
JPH04206719A JPH04206719A (ja) 1992-07-28
JP2888258B2 true JP2888258B2 (ja) 1999-05-10

Family

ID=18291212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2335671A Expired - Lifetime JP2888258B2 (ja) 1990-11-30 1990-11-30 基板処理装置および基板処理方法

Country Status (6)

Country Link
US (1) US5385624A (cg-RX-API-DMAC7.html)
EP (2) EP0488393B1 (cg-RX-API-DMAC7.html)
JP (1) JP2888258B2 (cg-RX-API-DMAC7.html)
KR (1) KR100238623B1 (cg-RX-API-DMAC7.html)
DE (1) DE69124672T2 (cg-RX-API-DMAC7.html)
TW (1) TW285745B (cg-RX-API-DMAC7.html)

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JP2017162931A (ja) * 2016-03-08 2017-09-14 株式会社ディスコ デバイスチップの製造方法
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Also Published As

Publication number Publication date
EP0488393A3 (en) 1992-07-15
EP0488393B1 (en) 1997-02-12
US5385624A (en) 1995-01-31
KR100238623B1 (ko) 2000-01-15
EP0680070A1 (en) 1995-11-02
EP0488393A2 (en) 1992-06-03
DE69124672D1 (de) 1997-03-27
JPH04206719A (ja) 1992-07-28
TW285745B (cg-RX-API-DMAC7.html) 1996-09-11
DE69124672T2 (de) 1997-06-19
KR920010777A (ko) 1992-06-27

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