JP2871975B2 - 半導体メモリ装置 - Google Patents

半導体メモリ装置

Info

Publication number
JP2871975B2
JP2871975B2 JP4283664A JP28366492A JP2871975B2 JP 2871975 B2 JP2871975 B2 JP 2871975B2 JP 4283664 A JP4283664 A JP 4283664A JP 28366492 A JP28366492 A JP 28366492A JP 2871975 B2 JP2871975 B2 JP 2871975B2
Authority
JP
Japan
Prior art keywords
transfer
signal
bit configuration
memory cell
shift register
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP4283664A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06111594A (ja
Inventor
恭典 沖村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON DENKI AISHII MAIKON SHISUTEMU KK
Original Assignee
NIPPON DENKI AISHII MAIKON SHISUTEMU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON DENKI AISHII MAIKON SHISUTEMU KK filed Critical NIPPON DENKI AISHII MAIKON SHISUTEMU KK
Priority to JP4283664A priority Critical patent/JP2871975B2/ja
Priority to KR93020119A priority patent/KR0138736B1/ko
Priority to DE69326206T priority patent/DE69326206T2/de
Priority to EP93307716A priority patent/EP0590953B1/en
Priority to US08/128,235 priority patent/US5381378A/en
Publication of JPH06111594A publication Critical patent/JPH06111594A/ja
Application granted granted Critical
Publication of JP2871975B2 publication Critical patent/JP2871975B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1036—Read-write modes for single port memories, i.e. having either a random port or a serial port using data shift registers

Landscapes

  • Shift Register Type Memory (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
JP4283664A 1992-09-29 1992-09-29 半導体メモリ装置 Expired - Fee Related JP2871975B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP4283664A JP2871975B2 (ja) 1992-09-29 1992-09-29 半導体メモリ装置
KR93020119A KR0138736B1 (en) 1992-09-29 1993-09-28 Semiconductor memory device
DE69326206T DE69326206T2 (de) 1992-09-29 1993-09-29 Halbleiterspeicheranordnung
EP93307716A EP0590953B1 (en) 1992-09-29 1993-09-29 Semiconductor memory device
US08/128,235 US5381378A (en) 1992-09-29 1993-09-29 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4283664A JP2871975B2 (ja) 1992-09-29 1992-09-29 半導体メモリ装置

Publications (2)

Publication Number Publication Date
JPH06111594A JPH06111594A (ja) 1994-04-22
JP2871975B2 true JP2871975B2 (ja) 1999-03-17

Family

ID=17668466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4283664A Expired - Fee Related JP2871975B2 (ja) 1992-09-29 1992-09-29 半導体メモリ装置

Country Status (5)

Country Link
US (1) US5381378A (enExample)
EP (1) EP0590953B1 (enExample)
JP (1) JP2871975B2 (enExample)
KR (1) KR0138736B1 (enExample)
DE (1) DE69326206T2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0123850B1 (ko) * 1994-04-15 1997-11-25 문정환 디지탈 영상 메모리
CN102867533A (zh) * 2012-08-31 2013-01-09 樊荣 一种电子存储器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2558979B1 (fr) * 1984-01-31 1986-05-23 Commissariat Energie Atomique Procede d'adressage au moyen de registres a decalage formes de memoires statiques d'un imageur matriciel
DE3680371D1 (de) * 1985-04-10 1991-08-29 Nec Corp Speicher mit auswaehlbarer wortlaenge.
US5222047A (en) * 1987-05-15 1993-06-22 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for driving word line in block access memory
JPS6468851A (en) * 1987-09-09 1989-03-14 Nippon Electric Ic Microcomput Semiconductor integrated circuit
JPH0697560B2 (ja) * 1987-11-19 1994-11-30 三菱電機株式会社 半導体記憶装置
JPH01224993A (ja) * 1988-03-04 1989-09-07 Nec Corp マルチポートメモリ
JPH0748303B2 (ja) * 1989-06-26 1995-05-24 株式会社東芝 ワード長変換回路
JPH0474387A (ja) * 1990-07-16 1992-03-09 Nec Corp 半導体記憶装置
KR950010570B1 (ko) * 1990-09-03 1995-09-19 마쯔시다덴기산교 가부시기가이샤 멀티포오트메모리
KR920007805Y1 (ko) * 1991-02-09 1992-10-19 조규섭 볍씨 침종겸용 최아장치

Also Published As

Publication number Publication date
JPH06111594A (ja) 1994-04-22
EP0590953B1 (en) 1999-09-01
KR940007874A (ko) 1994-04-28
US5381378A (en) 1995-01-10
EP0590953A2 (en) 1994-04-06
DE69326206D1 (de) 1999-10-07
DE69326206T2 (de) 1999-12-30
KR0138736B1 (en) 1998-06-15
EP0590953A3 (enExample) 1994-08-03

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