JP2828087B2 - バックバイアス電圧発生回路 - Google Patents

バックバイアス電圧発生回路

Info

Publication number
JP2828087B2
JP2828087B2 JP9010084A JP1008497A JP2828087B2 JP 2828087 B2 JP2828087 B2 JP 2828087B2 JP 9010084 A JP9010084 A JP 9010084A JP 1008497 A JP1008497 A JP 1008497A JP 2828087 B2 JP2828087 B2 JP 2828087B2
Authority
JP
Japan
Prior art keywords
back bias
bias voltage
signal
flip
flop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP9010084A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09198864A (ja
Inventor
洪▲セキ▼ 金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of JPH09198864A publication Critical patent/JPH09198864A/ja
Application granted granted Critical
Publication of JP2828087B2 publication Critical patent/JP2828087B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP9010084A 1995-12-29 1997-01-06 バックバイアス電圧発生回路 Expired - Fee Related JP2828087B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019950066058A KR0172556B1 (ko) 1995-12-29 1995-12-29 백 바이어스 전압 발생 회로
KR66058/1995 1995-12-29

Publications (2)

Publication Number Publication Date
JPH09198864A JPH09198864A (ja) 1997-07-31
JP2828087B2 true JP2828087B2 (ja) 1998-11-25

Family

ID=19447229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9010084A Expired - Fee Related JP2828087B2 (ja) 1995-12-29 1997-01-06 バックバイアス電圧発生回路

Country Status (2)

Country Link
JP (1) JP2828087B2 (ko)
KR (1) KR0172556B1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000030505A (ko) * 2000-03-04 2000-06-05 김태진 반도체장치의 승압회로
JP3479032B2 (ja) * 2000-06-20 2003-12-15 シャープ株式会社 半導体集積回路
JP2012123862A (ja) * 2010-12-07 2012-06-28 Elpida Memory Inc 半導体装置及びその制御方法
KR101933645B1 (ko) 2011-08-31 2018-12-31 삼성전자주식회사 상변화 메모리 장치, 그 동작 전압 생성 방법 및 이를 포함하는 메모리 시스템

Also Published As

Publication number Publication date
JPH09198864A (ja) 1997-07-31
KR0172556B1 (ko) 1999-03-30
KR970051103A (ko) 1997-07-29

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