JP2690434B2 - 半導体メモリ装置のキャパシタ及びその製造方法 - Google Patents

半導体メモリ装置のキャパシタ及びその製造方法

Info

Publication number
JP2690434B2
JP2690434B2 JP4265348A JP26534892A JP2690434B2 JP 2690434 B2 JP2690434 B2 JP 2690434B2 JP 4265348 A JP4265348 A JP 4265348A JP 26534892 A JP26534892 A JP 26534892A JP 2690434 B2 JP2690434 B2 JP 2690434B2
Authority
JP
Japan
Prior art keywords
layer
electrode
polycrystalline silicon
etching
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP4265348A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05198745A (ja
Inventor
大濟 陳
泰榮 鄭
泳雨 朴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH05198745A publication Critical patent/JPH05198745A/ja
Application granted granted Critical
Publication of JP2690434B2 publication Critical patent/JP2690434B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP4265348A 1991-09-07 1992-09-07 半導体メモリ装置のキャパシタ及びその製造方法 Expired - Fee Related JP2690434B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR910015626 1991-09-07
KR920005409 1992-03-31
KR1991P15626 1992-03-31
KR1992P5409 1992-03-31

Publications (2)

Publication Number Publication Date
JPH05198745A JPH05198745A (ja) 1993-08-06
JP2690434B2 true JP2690434B2 (ja) 1997-12-10

Family

ID=26628732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4265348A Expired - Fee Related JP2690434B2 (ja) 1991-09-07 1992-09-07 半導体メモリ装置のキャパシタ及びその製造方法

Country Status (6)

Country Link
JP (1) JP2690434B2 (it)
DE (1) DE4229837C2 (it)
FR (1) FR2681178A1 (it)
GB (1) GB2259406B (it)
IT (1) IT1256130B (it)
TW (1) TW222710B (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960002097B1 (ko) * 1992-02-28 1996-02-10 삼성전자주식회사 반도체장치의 커패시터 제조방법
US5254503A (en) * 1992-06-02 1993-10-19 International Business Machines Corporation Process of making and using micro mask
JPH0774268A (ja) * 1993-07-07 1995-03-17 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
US5383088A (en) * 1993-08-09 1995-01-17 International Business Machines Corporation Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics
US5512768A (en) * 1994-03-18 1996-04-30 United Microelectronics Corporation Capacitor for use in DRAM cell using surface oxidized silicon nodules
US5869368A (en) * 1997-09-22 1999-02-09 Yew; Tri-Rung Method to increase capacitance
KR100675275B1 (ko) 2004-12-16 2007-01-26 삼성전자주식회사 반도체 장치 및 이 장치의 패드 배치방법
TWI295822B (en) 2006-03-29 2008-04-11 Advanced Semiconductor Eng Method for forming a passivation layer
FR2988712B1 (fr) 2012-04-02 2014-04-11 St Microelectronics Rousset Circuit integre equipe d'un dispositif de detection de son orientation spatiale et/ou d'un changement de cette orientation.
FR2998417A1 (fr) 2012-11-16 2014-05-23 St Microelectronics Rousset Procede de realisation d'un element pointu de circuit integre, et circuit integre correspondant
US11825645B2 (en) 2020-06-04 2023-11-21 Etron Technology, Inc. Memory cell structure
JP7339319B2 (ja) * 2021-12-03 2023-09-05 ▲ゆ▼創科技股▲ふん▼有限公司 メモリセル構造

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63240057A (ja) * 1987-03-27 1988-10-05 Fujitsu Ltd スタツク型キヤパシタ
JPH01282855A (ja) * 1988-05-09 1989-11-14 Mitsubishi Electric Corp 半導体基板上にキャパシタを形成する方法
JPH03165552A (ja) * 1989-11-24 1991-07-17 Sony Corp スタックトキャパシタ型ｄｒａｍとその製造方法
JPH03166730A (ja) * 1989-11-27 1991-07-18 Seiko Instr Inc 半導体装置の製造方法
DD299990A5 (de) * 1990-02-23 1992-05-14 Dresden Forschzentr Mikroelek Ein-Transistor-Speicherzellenanordnung und Verfahren zu deren Herstellung
US5049517A (en) * 1990-11-07 1991-09-17 Micron Technology, Inc. Method for formation of a stacked capacitor
US5037773A (en) * 1990-11-08 1991-08-06 Micron Technology, Inc. Stacked capacitor doping technique making use of rugged polysilicon
KR930009583B1 (ko) * 1990-11-29 1993-10-07 삼성전자 주식회사 융모모양의 커패시터구조를 가진 반도체 메모리장치의 제조방법
JPH04207066A (ja) * 1990-11-30 1992-07-29 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
KR930009593B1 (ko) * 1991-01-30 1993-10-07 삼성전자 주식회사 고집적 반도체 메모리장치 및 그 제조방법(HCC Cell)
KR940005288B1 (ko) * 1991-07-11 1994-06-15 금성일렉트론 주식회사 반도체 장치의 제조방법

Also Published As

Publication number Publication date
GB9218898D0 (en) 1992-10-21
DE4229837C2 (de) 1996-07-11
ITMI922067A1 (it) 1994-03-04
GB2259406B (en) 1996-05-01
TW222710B (it) 1994-04-21
JPH05198745A (ja) 1993-08-06
ITMI922067A0 (it) 1992-09-04
GB2259406A (en) 1993-03-10
IT1256130B (it) 1995-11-29
FR2681178A1 (fr) 1993-03-12
FR2681178B1 (it) 1997-02-07
DE4229837A1 (de) 1993-03-11

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