JP2662399B2 - 赤外吸収化合物及びそれを用いた光記録媒体 - Google Patents

赤外吸収化合物及びそれを用いた光記録媒体

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Publication number
JP2662399B2
JP2662399B2 JP62189393A JP18939387A JP2662399B2 JP 2662399 B2 JP2662399 B2 JP 2662399B2 JP 62189393 A JP62189393 A JP 62189393A JP 18939387 A JP18939387 A JP 18939387A JP 2662399 B2 JP2662399 B2 JP 2662399B2
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JP
Japan
Prior art keywords
ring
substituted
ion
unsubstituted
optical recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62189393A
Other languages
English (en)
Other versions
JPS6431693A (en
Inventor
哲朗 福井
芳弘 小口
裕之 菅田
協 三浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP62189393A priority Critical patent/JP2662399B2/ja
Priority to US07/223,398 priority patent/US5108873A/en
Priority to EP88306970A priority patent/EP0305054B1/en
Priority to DE3888759T priority patent/DE3888759T2/de
Publication of JPS6431693A publication Critical patent/JPS6431693A/ja
Priority to US07/828,567 priority patent/US5245030A/en
Application granted granted Critical
Publication of JP2662399B2 publication Critical patent/JP2662399B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は赤外吸収化合物及びそれを利用した光記録媒
体である。 特に、光デイスクまたは光カードにおいて、繰り返し
再生における耐久性及び耐光性を向上させる赤外吸収化
合物及び光記録媒体に関する。 〔従来の技術〕 一般に、光デイスクおよび光カードは、基体の上に設
けた薄い記録層に形成された光学的に検出可能な小さな
(例えば、約1μm)ピツトをらせん状又は円形および
直線状のトラツク形態にして高密度情報を記憶すること
ができる。この様なデイスクに情報を書き込むには、レ
ーザ感応層の表面に集束したレーザを走査し、このレー
ザ光線が照射された表面のみがピツトを形成し、このピ
ツトをらせん状又は円形および直線状トラツクの形態で
形成する。レーザ感応層は、レーザ・エネルギーを吸収
して光学的に検出可能なピツトを形成できる。例えば、
ヒートモード記録方式では、レーザ感応層は熱エネルギ
ーを吸収し、その個所に蒸発又は融解により小さな凹部
(ピツト)を形成できる。また、別のヒートモード記録
方式では、照射されたレーザ・エネルギーの吸収によ
り、その個所に光学的に検出可能な濃度差を有するピツ
トを形成できる。 ここで、反射率の高い記録層として有機色素薄膜を用
いることにより、記録ピツトの光学的コントラストを高
く設定することができる。例えば、有機色素薄膜とし
て、レーザ光に対する光吸収の大きいポリメチン系色
素、アズレン系色素、シアニン系色素、ピリリウム系色
素等を用いると、金属光沢(反射10〜50%)を示す光吸
収反射膜が得られ、レーザ記録が可能で反射読み出しが
可能な光学記録媒体になる。特にレーザ光源として発振
波長700〜800nmの半導体レーザを用いると装置の小型
化、低コスト化が可能となる利点を有している。しかし
ながら、有機色素薄膜は、一般に熱および光に対して、
物質変化しやすい等の原因から、記録再生特性および保
存安定性が低下するという問題があった。 このような問題に対し、すでに特開昭60−236131号に
トリアリールアミン系化合物のアミニウム塩、あるいは
ジイモニウム塩を含有させる方法が提案されている。 〔発明が解決しようとしている問題点〕 本発明の目的とするところは、従来のものよりも耐光
性およびくり返し再生耐久性を向上させ、しかも溶剤解
性の良い生産性に優れた赤外吸収化合物及びそれを用い
た耐光性,くり返し再生耐久性のある光記録媒体を提供
することにある。 〔問題を解決するための手段〕 すなわち本発明の赤外吸収化合物は、下記一般式
(1)または(2)で示される。 ここでAは を示し、X は陰イオンを示す。 R1からR8は炭素数1〜8の直鎖あるいは分岐アルキル
基であり、R1とR2,R3とR4,R5とR6及びR7とR8の組合せで
少なくとも1組がNとともに置換もしくは未置換のピロ
リジン環、置換もしくは未置換のピペリジン環、置換も
しくは未置換のモルホリン環、または置換もしくは未置
換のテトラヒドロピリジン環を形成する。 また、中心の芳香族環が低級アルキル基あるいはハロ
ゲン基で置換されていても良い。 X は、塩化物イオン、臭化物イオン、ヨウ化物イオ
ン、過塩素酸塩イオン、硝酸塩イオン、ベンゼンスルホ
ン酸塩イオン、P−トルエンスルホン酸塩イオン、メチ
ル硫酸塩イオン、エチル硫酸塩イオン、プロピル硫酸塩
イオン、テトラフルオロホウ酸塩イオン、テトラフエニ
ルホウ酸塩イオン、ヘキサフルオリン酸塩イオン、ベン
ゼンスルフイン酸塩イオン、酢酸塩イオン、トリフルオ
ロ酢酸塩イオン、プロピオン酢酸塩イオン、安息香酸塩
イオン、シユウ酸塩イオン、コハク酸塩イオン、マロン
酸塩イオン、オレイン酸塩イオン、ステアリン酸塩イオ
ン、クエン酸塩イオン、一水素二リン酸塩イオン、二水
素一リン酸塩イオン、ペンタクロロスズ酸塩イオン、ク
ロロスルホン酸塩イオン、フルオロスルホン酸塩イオ
ン、トリフルオロメタンスルホン酸塩イオン、ヘキサフ
ルオロヒ酸塩イオン、ヘキサフルオロアンチモン酸塩イ
オン、モリブテン酸塩イオン、タングステン酸塩イオ
ン、チタン酸塩イオン、ジルコン酸塩イオンなどの陰イ
オンを表わす。 R1からR8の置換基は、炭素数1から8の直鎖あるいは
分岐アルキル基で、それぞれ同じであっても異っていて
も良いが、R1とR2,R3とR4,R5とR6,R7とR8の組合わせで
少なくとも一つ以上、ピロリジン環、ピペリジン環、モ
ルホリン環もしくはテトラヒドロピリジン環を形成しな
ければならない。 本化合物の製造方法は、米国特許明細書3251881,米国
特許明細書3575871,米国特許明細書3484467および特開
昭61−69991号等に記載された方法を利用することが出
来る。例えば次の過程により製造出来る。 上記ウルマン反応及び還元反応により得たアミノ体を
選択的にアルキル化によりアルキル化したのち、酸化反
応により最終生成物を得ることが出来る。 このアルキル化反応でピロリジン環,ピペリジン環,
モルホリン環,テトラヒドロピリジン環などを得るのに
適当なアルキル化剤を使用すれば良い。R1からR8が非対
称とする場合にはこのアルキル化を多段階的に行う必要
があり、コスト的にはR1からR8が同一の場合が好まし
い。 例えば、ピロリジン環を形成するには1,4−ジブロモ
ブタン、1,4−ジクロロブタン、1,4−ジヨードブタンな
どでアルキル化することにより形成することが出来、ピ
ペリジン環では1,5−ジブロモペンタン、1,5−ジクロロ
ペンタン、1,5−ジヨードペンタンなどを使用する。モ
ルホリン環ではまず2−ブロモエタノールなどでヒドロ
キシエチル化を行ったのち、酸処理により脱水してモル
ホリン環を形成でき、テトラヒドロピリジン環はメタク
リルブロマイドなどでメタクリル化したのち酸処理によ
り環化を行うことが出来る。 特にアミノ基の環化反応は、アルキル化と比べてすみ
やかに反応が進行し収率も良く、従来のプロピル体ある
いはブチル体などより製造上の利点が大きい。 次に一般式(1)及び(2)で用いられる化合物の具
体例を挙げる。簡略化のために(1)式で表わされる化
合物をA,X,(R1R2)(R3R4)(R5R6)(R7R8)、(2)
式で表わされる化合物をX,(R1R2)(R3R4)(R5R6
(R7R8)で表記する。例えば(1)式でAが でX がClO4 でR1からR8が2−メチルピロリジン環を
形成する場合 と表記する。 (2)式でX がAsF6 でR1とR2がピペリジン環を形成
し、R3からR8がn−ブチル基である場合、AsF6,(C4H9C
4H9(CH2CH2CH2CH2CH2)と表記する。 化合物No. 2−1 ClO4,(C4H9C4H9(CH2CH2CH2CH2) 2−2 ClO4,(CH2CH2CH2CH2 2−3 ClO4,(C5H11C5H11(CH2CH2CH2CH2) 2−4 ClO4,(C4H9C4H9(CH2CH2CH2CH2CH2) 2−5 ClO4,(CH2CH2CH2CH2CH2 2−6 ClO4,(CH2CH2OCH2CH2 2−8 ClO4,(CH=C(CH3)CH2C(CH32CH2 2−9 BF4,(CH2CH2CH2CH2CH2 2−10 BF4,(C4H9C4H9(CH2CH2CH2CH2CH2) 2−11 AsF6,(CH2CH2CH2CH2 2−12 AsF6,(CH2CH2CH2CH2CH2 2−13 AsF6,(C4H9C4H9(CH2CH2CH2CH2 2−14 SbF6,(CH2CH2CH2CH2 このようなアミニウム塩化合物あるいはジイモニウム
塩化合物は、極大吸収波長が900nm以上にあり、吸光係
数も数万から十数万程度と大きい吸収ピークを持つ。 このような化合物は光記録媒体の材料としての用途以
外に断熱フイルム,サングラスなどに使われる。 光記録媒体として、これらの化合物と併用される近赤
外吸収色素としては、一般的に知られている色素が用い
られ、例えばシアニン系色素,メロシアニン系色素,ク
ロコニウム系色素,スクアリウム系色素,アズレニウム
系色素,ポリメチン系色素,ナフトキノン系色素,ピリ
リウム系色素,フタロシアニン系色素などがある。 これらの色素に対して前記一般式(1)のアミニウム
塩化合物または一般式(2)のジイモニウム塩化合物の
添加量は、全固形分を基準として記録層に対して1〜60
重量%、好ましくは5〜40重量%、より好ましくは10〜
30重量%が適当である。 これらの化合物以外に、記録層中にバインダーを含有
させても良い。バインダーとしては例えば、ニトロセル
ロース、リン酸セルロース、硫酸セルロース、酢酸セル
ロース、プロピオン酸セルロース、酪酸セルロース、ミ
リスチン酸セルロース、パリミチン酸セルロース、酢酸
・プロピオン酸セルロース、酢酸・酪酸セルロースなど
のセルロースエステル類、メチルセルロース、エチルセ
ルロース、プロピルセルロース、ブチルセルロースなど
のセルロースエーテル類、ポリスチレン、ポリ塩化ビニ
ル、ポリ酢酸ビニル、ポリビニルブチラール、ポリビニ
ルアセタール、ポリビニルアルコール、ポリビニルピロ
リドンなどのビニル樹脂類、スチレン−ブタジエンコポ
リマー、スチレン−アクリロニトリルコポリマー、スチ
レン−ブタジエン−アクリロニトリルコポリマー、塩化
ビニル−酢酸ビニルコポリマーなどの共重合樹脂類、ポ
リメチルメタクリレート、ポリメチルアクリレート、ポ
リブチルアクリレート、ポリアクリル酸、ポリメタクリ
ル酸、ポリアクリルアミド、ポリアクリロニトリルなど
のアクリル樹脂類、ポリエチレンテレフタレートなどの
ポリエステル類、ポリ(4,4′−イソプロピリデンジフ
エニレン−コ−1,4−シクロヘキシレンジメチレンカー
ボネート)、ポリ(エチレンジオキシ−3,3′−フエニ
レンチオカーボネート)、ポリ(4,4′−イソプロピリ
デンジフエニレンカーボネート−コ−テレフタレー
ト)、ポリ(4,4′−イソプロピリデンジフエニレンカ
ーボネート)、ポリ(4,4′−sec−ブチリデンジフエニ
レンカーボネート)、ポリ(4,4′−イソプロピリデン
ジフエニレンカーボネート−ブロツク−オキシエチレ
ン)などのポリアリレート樹脂類、あるいはポリアミド
類、ポリイミド類、エポキシ樹脂類、フエノール樹脂
類、ポリエチレン、ポリプロピレン、塩素化ポリエチレ
ンなどのポリオレフイン類などを用いることができる。 また、記録層中に界面活性剤、帯電防止剤、安定剤、
分散散難燃剤、滑剤、可塑剤などが含有されていてもよ
い。 また、記録層と基板の間に下引き層、記録層の上に保
護層を設けても良い。 下引き層としては、耐溶剤性付与、反射率の向上、あ
るいはくり返し再生の向上などのために、保護層はキ
ズ,ホコリ,汚れなどからの保護および記録層の環境安
定性などのために用いられる。これらに使用される材料
は無機化合物、金属あるいは有機高分子化合物が主に用
いられる。無機化合物としては例えばSiO2,MgF2,SiO,Ti
O2,ZnO,TiN,SiNなど、金属としては例えばZn,Cu,Ni,Al,
Cr,Ge,Se,Cdなどを、有機高分子化合物としてはアイオ
ノマー樹脂,ポリアミド系樹脂,ビニル系樹脂,天然高
分子,エポキシ樹脂,シランカツプリング剤などを用い
ることが出来る。 基板としては、ポリエステル、ポリカーボネート、ア
クリル樹脂、ポリオレフイン樹脂、フエノール樹脂、エ
ポキシ樹脂、ポリアミド、ポリイミドなどのプラスチツ
ク、ガラスあるいは金属類などを用いることができる。 塗工の際に使用できる有機溶剤は、分散状態とする
か、あるいは溶解状態にするかによって異なるが、一般
にメタノール、エタノール、イソプロパノール、ジアセ
トンアルコールなどのアルコール類、アセトン、メチル
エチルケトン、シクロヘキサノンなどのケトン類、N,N
−ジメチルホルムアミド、N,N−ジメチルアセトアミド
などのアミド類、ジメチルスルホキシなどのスルホキシ
ド類、テトラヒドロフラン、ジオキサン、エチレングリ
コールモノメチルエーテルなどのエーテル類、酢酸メチ
ル、酢酸エチル、酢酸ブチルなどのエステル類、クロロ
ホルム、塩化メチレン、ジクロルエチレン、四塩化炭
素、トリクロルエチレンなどの脂肪族ハロゲン化炭化水
素類、ベンゼン、トルエン、キシレン、モノクロルベン
ゼン、ジクロルベンゼン芳香族類あるいはn−ヘキサ
ン、シクロヘキサノリグロインなどの脂肪族炭化水素類
などを用いることができる。 塗工は、浸漬コーテイング法、スプレーコーテイング
法スピンナーコーテイング法、ビードコーテイング法、
ワイヤーバーコーテイング法、ブレードコーテイング
法、ローラーコーテイング法、カーテンコーテイング法
などのコーテイング法を用いて行うことができる。 このような溶剤を用いて形成される記録層の膜厚は50
Å〜100μm、好ましくは200Å〜1μmが適当である。 〔実施例〕 次に本発明における実施例を挙げて説明する。 <合成例1> P−フエニレンジアミン0.1モル,P−ニトロヨードベ
ンゼン0.6モル,無水炭酸カリウム0.25モル,銅粉2部
(重量)を150部のジメチルホルムアミド中撹拌下還流
を4日間行った。反応後、反応混合物をロ過し、ロ物を
ジメチルホルムアミド,水,アセトンでよく洗浄したの
ち乾燥した。赤褐色のテトラキス(P−ニトロフエニ
ル)−P−フエニレンジアミンを30部得た。 上記で得た化合物25部を100部のジメチルホルムアミ
ドパラジウム−カーボン水添触媒1部とともにオートク
レーブ中に加え水素ガスを5.0Kg/cm2にかけ90℃〜100℃
下で水素吸収が止まるまで撹拌した。 反応後反応液をロ過、ロ物をジメチルホルムアミドで
洗ったのち、ロ液を350部の氷水にあけた。しばらく撹
拌したのち、沈殿物をロ取した。エタノールジメチルホ
ルムアミド混合溶媒で再結晶を行い、テトラキス(P−
アミノフエニル)−P−フエニレンジアミン14部を得
た。高速液クロ分析により純度は98.7%であった。 NMR(d6−DMSO)分析によりδ3.37ppmに8H分のアミノ
基の吸収、δ6.38〜6.50ppmにブロードなダブレツトの2
0H分の芳香族環の吸収を測定した。 <1−3の合成> 上記アミノ体6.0部をジメチルホルムアミド30部に溶
かし、無水炭酸水素ナトリウム8.0部、1,4−ジグロモブ
タン12.3部を加え90℃〜110℃で加熱撹拌をした。10時
間反応後、反応液を氷水100部にあけ撹拌したのち、沈
殿物をロ取した。乾燥後、シリカゲルカラムで精製し
た。取得量8.3部(収率95.0%)。赤外吸光分析により
アミノ基のNH伸縮振動による吸収の消失を確認した。 この環化化合物1部をアセトン30部中に分散させ、撹
拌下、当モルの過塩素酸銀を加えた。室温下30時間反応
させたのち、析出した銀をロ別しアセトンでよく洗う。
溶媒を留去したのち、残留物を水で洗い乾燥した。取得
量0.85部 このように合成した1−3は吸収極大波長が1019nm,
吸光係数88,000の赤外部に大きな吸収領域をもつ化合物
であった。 <1−5の合成> 1−3の合成において1,4−ジブロモブタンの代わり
に1,5−ジブロモペンタンを用いた以外は同様に反応を
行った。 吸収極大波長1030nmであった。 以上説明した例はアニオンが過塩素酸の場合である
が、他のアニオンにする場合は、それに相当する銀塩を
用いることにより容易に目的とする化合物を得ることが
出来る。例えば、AgSbF6,AgBF4,AgSO4,AgNO3,AgAsF6,Ag
SO3C6H4CH3,AgSO3CF3などの銀塩を用いることが出来
る。また、この他に、電解酸化により得ることも出来
る。 <合成例2> 合成例1において使用したP−フエニレンジアミンを
ベンジジンにかえた以外は、合成例1と同様に反応を行
い、オレンジ色のテトラキス(P−アミノフエニル)・
ベンジジン,12部を得た。 <1−12の合成> 合成例2で得たアミノ体2部をジメチルホルムアミド
40部、無水炭酸水素ナトリウム0.33部、1,4−ジブロモ
ブタン0.78部とともに90℃〜110℃で16時間反応した。
反応混合物を300部の氷水にあけ撹拌したのち、析出物
をロ過、水、エタノールで洗浄し、乾燥したのち、シリ
カゲルカラムで原料と生成物を分離した。取得量1.4
部。 上記で得たピロリジン体1部をジメチルホルムアミド
20部、ヨウ化ブチル2.2部、無水炭酸ナトリウム1部と
ともに、120℃で30時間反応させた。反応後、氷水100部
にあけ、生成物をロ取した。シリカゲルカラムで精製
し、目的物を1.1部得た。赤外吸光分析によりアミノ基
のNH伸縮振動による吸収の消失を確認した。 上記化合物0.5部をアセトン20部中に分散させ過塩素
酸銀を当モル加え室温下30時間反応させた。反応後、銀
をロ別し、ロ液より溶剤を留去して目的物(1−12)を
0.3部得た。極大吸収波長は1050nmであった。 <2−2の合成> 1−3の合成の途中で得られた、ピロリジン体1.0部
をアセトン40部に分散撹拌しながら、室温下2倍モルの
過塩素酸銀を加え1時間撹拌した。反応後、析出した銀
塩をロ別し、アセトンでよく洗った。ロ液からアセトン
を留去したのち水で洗ったあと減圧下乾燥した。収得量
0.45部1040nmに極大ピークをもつ赤外吸収化合物であっ
た。 次に一般式(1)および(2)で表される赤外吸収化
合物を光記録材料として利用した実施例について述べ
る。 <実施例1> 直径130mmφ、厚さ1.2mmのPMMA基板上に50μのプレグ
ルーブを設け、その上にポリメチン色素(日本化薬製IR
−820)の有機色素と前記赤外吸収化合物No.1−5を重
量比90:10で1,2−ジクロロエタンに溶解させた液をスピ
ン塗布により800Åの記録層を設けた。こうして得た媒
体の内周側と外周側に0.3mmのスペーサーをはさみ紫外
線接着剤で他のPMMA基板と貼合せエアーサンドイツチ構
造の光記録媒体を得た。 これを1800rpmに回転させ、830nmに半導体レーザーを
用いて基板側より記録パワー6mW、記録周波数2MHzでス
ポツト径1.5μmφの書き込みを行った。次に、読み出
しパワー0.9mWで再生し、C/N比をスペクトル解析により
測定した。続いて、10万回の読み出し(再生くり返し)
を行った後のC/N比を測定した。 更に、前記条件で作成した記録媒体に1KW/m2のキセノ
ンランプ光を100時間照射し耐光安定性試験を行い、反
射率およびC/N比を測定した。結果を表−1に示す。 <実施例2> 実施例1と同様の基板上に、実施例1と同様な方法
で、1−グアイアズレニル−5−(6′−t−ブチルア
ズレニル)−2,4−ペンタジエノール・パークロレイト
と前記赤外吸収化合物No.1−11を重量比90:10の液によ
り記録層を設けた。 こうして得た光学記録媒体で実施例1と同じ試験をし
た。結果を表−2に示す。 <実施例3〜7> 実施例1と同様に表−3の組成からなる光学記録媒体
を作成し、実施例1と同様の試験を行った。結果を表−
4に示す。 <比較例1〜3> 実施例1,2および5で用いた赤外吸収化合物を除いた
以外は実施例2及び5と同様の方法で、光学記録媒体を
作成し、評価した。結果を表−4に示す。 <比較例4> 実施例1で用いた赤外吸収化合物をN,N,N′,N′−テ
トラキス(p−ジノルマルブチルアミノフエニル)−p
−フエニレンジアミンのアミニウムの過塩素酸塩にかえ
た以外は、実施例1と同様の方法で光学記録媒体を作成
し評価した。結果を表−4に示す。 <実施例8〜11> ウオーレツトサイズの厚さ0.4mmポリカーボネート
(以下「PC」と略記)基板上に熱プレス法によりプレグ
ルーブを設け、その上に下記表−5に示す有機系色素お
よび赤外吸収化合物をジアセトンアルコール中に混合さ
せた液をバーコート法により塗布した後、乾燥して850
Åの記録層を得た。さらにその上にエチレン−酢ビドラ
イフイルムを介してウオーレツトサイズの厚さ0.3mmPC
基板の熱ロール法により密着構造の光学記録媒体を作製
した。 こうして作製した実施例の光学的記録媒体をX−Y方
向に駆動するステージ上に取り付け、発振波長830nmの
半導体レーザを用いて厚さ0.4mmのPC基板側より有機薄
膜記録層にスポツトサイズ3.0μmφ、記録パワー4.0mW
で記録パルス80μsecでY軸方向に情報を書き込み、読
み出しパワー0.4mWで再生し、そのコントラスト比 →未記録部の信号強度、B→記録部の信号強度)を測定
した。 さらに、前記条件で作製した同一記録媒体を実施例1
と同様の条件の耐光安定性試験を行い、その後の反射率
およびコントラスト比を測定した。その結果を表−6に
示す。 <比較例5〜6> 実施例8と10で赤外吸収化合物を除いた以外は実施例
8と10と同様の方法で、光学記録媒体を作成し、評価し
た。結果を表−6に示す。 <比較例7> 実施例9で赤外吸収化合物をN,N,N′,N′−テトラキ
ス(p−ジノルマルブチルアミノフエニル)−p−フエ
ニレンジアミンのジイモニウムの過塩素酸塩にかえた以
外は実施例9と同様の方法で、光学記録媒体を作成し、
評価した。結果を表−6に示す。 <比較例8〜9> 実施例8で赤外吸収化合物をN,N,N′,N′−テトラキ
ス(p−ジノルマルブチルアミノフエニル)−p−フエ
ニレンジアミンのアミニウムのヘキサフルオロヒ酸塩と
N,N,N′,N′−テトラキス(p−ジノルマルブチルアミ
ノフエニル)−p−フエニレンジアミンのジイモニウム
のヘキサフルオロヒ酸塩にかえた以外は、実施例8と同
様の方法で光学記録媒体を作成し評価した。結果を表−
7に示す。 〔発明の効果〕 以上、説明したように、一般式(1)および(2)で
表わされる化合物は赤外部に大きな吸収領域を持ち、簡
便に合成することが出来、また光記録媒体として利用し
た場合に、くり返し再生における耐久性及び耐光安定性
を著しく増した媒体を提供することが可能となった。
───────────────────────────────────────────────────── フロントページの続き (72)発明者 三浦 協 東京都大田区下丸子3丁目30番2号 キ ヤノン株式会社内 (56)参考文献 特開 昭62−50187(JP,A) 特開 昭60−236131(JP,A)

Claims (1)

  1. (57)【特許請求の範囲】 1.下記一般式(1)又は(2)で表されることを特徴
    とする赤外吸収化合物。 (式中Aは を示し、X-は陰イオンを示す。R1からR8は炭素数1から
    8の直鎖あるいは分岐アルキル基であり、R1とR2,R3とR
    4,R5とR6およびR7とR8の組合わせで少なくとも1組がN
    と共に置換もしくは未置換のピロリジン環、置換もしく
    は未置換のピペリジン環、置換もしくは未置換のモルホ
    リン環、または置換もしくは未置換のテトラヒドロピリ
    ジン環を形成する。) 2.有機色素薄膜中に、下記一般式(1)および/また
    は(2)で表される化合物を含むことを特徴とする光記
    録媒体。 (式中Aは を示し、X-は陰イオンを示す。R1からR8は炭素数1から
    8の直鎖あるいは分岐アルキル基であり、R1とR2,R3とR
    4,R5とR6及びR7とR8の組合わせで少なくとも1組がNと
    共に置換もしくは未置換のピロリジン環、置換もしくは
    未置換のピペリジン環、置換もしくは未置換のモルホリ
    ン環、または置換もしくは未置換のテトラヒドロピリジ
    ン環を形成する。)
JP62189393A 1987-07-28 1987-07-28 赤外吸収化合物及びそれを用いた光記録媒体 Expired - Fee Related JP2662399B2 (ja)

Priority Applications (5)

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JP62189393A JP2662399B2 (ja) 1987-07-28 1987-07-28 赤外吸収化合物及びそれを用いた光記録媒体
US07/223,398 US5108873A (en) 1987-07-28 1988-07-25 IR-ray absorptive compound and optical recording medium by use thereof
EP88306970A EP0305054B1 (en) 1987-07-28 1988-07-28 IR-ray absorptive compound and optical recording medium by use thereof
DE3888759T DE3888759T2 (de) 1987-07-28 1988-07-28 Infrarot-absorbierende Verbindung und diese Verbindung verwendendes optisches Aufzeichnungsmedium.
US07/828,567 US5245030A (en) 1987-07-28 1992-01-31 IR-ray absorptive amino compound and optical recording medium by use thereof

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JP62189393A JP2662399B2 (ja) 1987-07-28 1987-07-28 赤外吸収化合物及びそれを用いた光記録媒体

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JP3666702B2 (ja) * 1996-10-08 2005-06-29 富士写真フイルム株式会社 情報記録媒体
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TWI357858B (en) 2004-10-20 2012-02-11 Du Pont Donor element with release-modifier for thermal tr
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