JP2634743B2 - 低温化学蒸着法 - Google Patents
低温化学蒸着法Info
- Publication number
- JP2634743B2 JP2634743B2 JP4273600A JP27360092A JP2634743B2 JP 2634743 B2 JP2634743 B2 JP 2634743B2 JP 4273600 A JP4273600 A JP 4273600A JP 27360092 A JP27360092 A JP 27360092A JP 2634743 B2 JP2634743 B2 JP 2634743B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- chemical vapor
- temperature
- substrate
- deposition method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 33
- 239000010409 thin film Substances 0.000 claims description 63
- 238000000151 deposition Methods 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 29
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- IVSPVXKJEGPQJP-UHFFFAOYSA-N 2-silylethylsilane Chemical group [SiH3]CC[SiH3] IVSPVXKJEGPQJP-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 3
- 229910001882 dioxygen Inorganic materials 0.000 claims 3
- 150000002430 hydrocarbons Chemical class 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 39
- 230000008021 deposition Effects 0.000 description 36
- 229910004298 SiO 2 Inorganic materials 0.000 description 32
- 235000012431 wafers Nutrition 0.000 description 22
- 239000000376 reactant Substances 0.000 description 17
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- 239000010410 layer Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- 238000006557 surface reaction Methods 0.000 description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000001994 activation Methods 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000012686 silicon precursor Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- -1 SiO 2 Chemical compound 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 150000001282 organosilanes Chemical class 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 241000282461 Canis lupus Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 238000009790 rate-determining step (RDS) Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- KNSVRQSOPKYFJN-UHFFFAOYSA-N tert-butylsilicon Chemical compound CC(C)(C)[Si] KNSVRQSOPKYFJN-UHFFFAOYSA-N 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/762101 | 1991-09-18 | ||
| US07/762,101 US5204141A (en) | 1991-09-18 | 1991-09-18 | Deposition of silicon dioxide films at temperatures as low as 100 degree c. by lpcvd using organodisilane sources |
| US7/762101 | 1991-09-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05195228A JPH05195228A (ja) | 1993-08-03 |
| JP2634743B2 true JP2634743B2 (ja) | 1997-07-30 |
Family
ID=25064138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4273600A Expired - Fee Related JP2634743B2 (ja) | 1991-09-18 | 1992-09-17 | 低温化学蒸着法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5204141A (OSRAM) |
| EP (1) | EP0533129A2 (OSRAM) |
| JP (1) | JP2634743B2 (OSRAM) |
| KR (1) | KR960011015B1 (OSRAM) |
Families Citing this family (76)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0548990B1 (en) * | 1991-12-26 | 1997-03-12 | Canon Kabushiki Kaisha | Chemical vapor deposition method for forming a deposited film with the use of a liquid raw material and apparatus suitable for practising said method |
| EP0560617A3 (en) * | 1992-03-13 | 1993-11-24 | Kawasaki Steel Co | Method of manufacturing insulating film on semiconductor device and apparatus for carrying out the same |
| US5670224A (en) * | 1992-11-13 | 1997-09-23 | Energy Conversion Devices, Inc. | Modified silicon oxide barrier coatings produced by microwave CVD deposition on polymeric substrates |
| JP3373057B2 (ja) * | 1994-07-29 | 2003-02-04 | エヌオーケー株式会社 | 水素分離膜の製造法 |
| TW285753B (OSRAM) * | 1995-01-04 | 1996-09-11 | Air Prod & Chem | |
| TW328971B (en) * | 1995-10-30 | 1998-04-01 | Dow Corning | Method for depositing Si-O containing coatings |
| DE69605443T2 (de) * | 1995-11-01 | 2000-05-04 | Siemens Westinghouse Power Corp., Orlando | Umweltverträgliche, wässrige mullit-sole, mullit-zusammensetzungen und verfahren zu deren herstellung |
| JPH10284358A (ja) * | 1997-04-09 | 1998-10-23 | Sony Corp | 表面反応処理後の試料形状のシミュレーション方法、装置および記録媒体 |
| US6660656B2 (en) | 1998-02-11 | 2003-12-09 | Applied Materials Inc. | Plasma processes for depositing low dielectric constant films |
| US6340435B1 (en) * | 1998-02-11 | 2002-01-22 | Applied Materials, Inc. | Integrated low K dielectrics and etch stops |
| US6303523B2 (en) | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
| US6627532B1 (en) * | 1998-02-11 | 2003-09-30 | Applied Materials, Inc. | Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition |
| US6054379A (en) * | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
| US6287990B1 (en) | 1998-02-11 | 2001-09-11 | Applied Materials, Inc. | CVD plasma assisted low dielectric constant films |
| US6593247B1 (en) | 1998-02-11 | 2003-07-15 | Applied Materials, Inc. | Method of depositing low k films using an oxidizing plasma |
| US6667553B2 (en) | 1998-05-29 | 2003-12-23 | Dow Corning Corporation | H:SiOC coated substrates |
| US6159871A (en) * | 1998-05-29 | 2000-12-12 | Dow Corning Corporation | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
| KR100375300B1 (ko) * | 1998-12-16 | 2003-05-17 | 엘지전자 주식회사 | 통신장비의 데이타 입출력 측정방법 |
| US6156743A (en) * | 1999-10-18 | 2000-12-05 | Whitcomb; John E. | Method of decreasing fatigue |
| US6399489B1 (en) | 1999-11-01 | 2002-06-04 | Applied Materials, Inc. | Barrier layer deposition using HDP-CVD |
| US6544869B1 (en) * | 2000-06-23 | 2003-04-08 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus for depositing semiconductor film and method for fabricating semiconductor device |
| US6472333B2 (en) * | 2001-03-28 | 2002-10-29 | Applied Materials, Inc. | Silicon carbide cap layers for low dielectric constant silicon oxide layers |
| US6709721B2 (en) | 2001-03-28 | 2004-03-23 | Applied Materials Inc. | Purge heater design and process development for the improvement of low k film properties |
| US6596653B2 (en) * | 2001-05-11 | 2003-07-22 | Applied Materials, Inc. | Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD |
| JP3418383B2 (ja) * | 2001-05-31 | 2003-06-23 | 沖電気工業株式会社 | 半導体装置の製造方法 |
| US6926926B2 (en) * | 2001-09-10 | 2005-08-09 | Applied Materials, Inc. | Silicon carbide deposited by high density plasma chemical-vapor deposition with bias |
| US20040033371A1 (en) * | 2002-05-16 | 2004-02-19 | Hacker Nigel P. | Deposition of organosilsesquioxane films |
| US7531679B2 (en) * | 2002-11-14 | 2009-05-12 | Advanced Technology Materials, Inc. | Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride |
| US7446217B2 (en) * | 2002-11-14 | 2008-11-04 | Advanced Technology Materials, Inc. | Composition and method for low temperature deposition of silicon-containing films |
| US7579496B2 (en) * | 2003-10-10 | 2009-08-25 | Advanced Technology Materials, Inc. | Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same |
| US7601860B2 (en) | 2003-10-10 | 2009-10-13 | Advanced Technology Materials, Inc. | Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films |
| CN101001610A (zh) * | 2004-07-13 | 2007-07-18 | 爱尔达纳米公司 | 防止药物转向的陶瓷结构 |
| WO2006024693A1 (en) * | 2004-08-31 | 2006-03-09 | Silecs Oy | Novel polyorganosiloxane dielectric materials |
| US7087536B2 (en) * | 2004-09-01 | 2006-08-08 | Applied Materials | Silicon oxide gapfill deposition using liquid precursors |
| JP2006261434A (ja) | 2005-03-17 | 2006-09-28 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | シリコン酸化膜の形成方法 |
| EP1891145B1 (en) * | 2005-06-13 | 2017-08-09 | Pibond Oy | Method for producing a polymer for semiconductor optoelectronics comprising polymerizing functionalized silane monomers with bridging hydrocarbon group |
| FR2887252A1 (fr) * | 2005-06-21 | 2006-12-22 | Air Liquide | Procede de formation d'un film dielectrique et nouveaux precurseurs pour la mise en oeuvre de ce procede |
| CA2620167A1 (en) * | 2005-08-23 | 2007-03-01 | Altairnano, Inc. | Highly photocatalytic phosphorus-doped anatase-tio2 composition and related manufacturing methods |
| WO2007103820A1 (en) * | 2006-03-02 | 2007-09-13 | Altairnano, Inc. | Nanostructured indium-doped iron oxide |
| US20080044638A1 (en) * | 2006-03-02 | 2008-02-21 | Fred Ratel | Nanostructured Metal Oxides |
| US20080038482A1 (en) * | 2006-03-02 | 2008-02-14 | Fred Ratel | Method for Low Temperature Production of Nano-Structured Iron Oxide Coatings |
| US20080124946A1 (en) * | 2006-11-28 | 2008-05-29 | Air Products And Chemicals, Inc. | Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films |
| US20080254258A1 (en) * | 2007-04-12 | 2008-10-16 | Altairnano, Inc. | Teflon® replacements and related production methods |
| US8058138B2 (en) * | 2008-07-17 | 2011-11-15 | Micron Technology, Inc. | Gap processing |
| US8765233B2 (en) * | 2008-12-09 | 2014-07-01 | Asm Japan K.K. | Method for forming low-carbon CVD film for filling trenches |
| US8703624B2 (en) * | 2009-03-13 | 2014-04-22 | Air Products And Chemicals, Inc. | Dielectric films comprising silicon and methods for making same |
| US7985188B2 (en) * | 2009-05-13 | 2011-07-26 | Cv Holdings Llc | Vessel, coating, inspection and processing apparatus |
| PL2251453T3 (pl) | 2009-05-13 | 2014-05-30 | Sio2 Medical Products Inc | Uchwyt na pojemnik |
| US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
| US8703625B2 (en) * | 2010-02-04 | 2014-04-22 | Air Products And Chemicals, Inc. | Methods to prepare silicon-containing films |
| US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
| US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
| SG191213A1 (en) | 2010-12-28 | 2013-07-31 | Kirin Brewery | Gas-barrier plastic molded product and manufacturing process therefor |
| AU2011350427B2 (en) * | 2010-12-28 | 2015-05-07 | Kirin Beer Kabushiki Kaisha | Method for producing gas barrier plastic molded body |
| US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
| US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
| EP2776603B1 (en) | 2011-11-11 | 2019-03-06 | SiO2 Medical Products, Inc. | PASSIVATION, pH PROTECTIVE OR LUBRICITY COATING FOR PHARMACEUTICAL PACKAGE, COATING PROCESS AND APPARATUS |
| JP2013106019A (ja) * | 2011-11-17 | 2013-05-30 | Toyota Central R&D Labs Inc | 半導体装置とその製造方法 |
| TWI576242B (zh) * | 2011-12-28 | 2017-04-01 | Kirin Brewery | Gas barrier plastic molded body and manufacturing method thereof |
| EP2846755A1 (en) | 2012-05-09 | 2015-03-18 | SiO2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
| WO2013177326A1 (en) | 2012-05-25 | 2013-11-28 | Advanced Technology Materials, Inc. | Silicon precursors for low temperature ald of silicon-based thin-films |
| US20150297800A1 (en) | 2012-07-03 | 2015-10-22 | Sio2 Medical Products, Inc. | SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS |
| US9243324B2 (en) * | 2012-07-30 | 2016-01-26 | Air Products And Chemicals, Inc. | Methods of forming non-oxygen containing silicon-based films |
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| TWI797640B (zh) | 2020-06-18 | 2023-04-01 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 基於矽之自組裝單層組成物及使用該組成物之表面製備 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4900591A (en) * | 1988-01-20 | 1990-02-13 | The United States Of America As Represented By The Secretary Of The Air Force | Method for the deposition of high quality silicon dioxide at low temperature |
| US4923716A (en) * | 1988-09-26 | 1990-05-08 | Hughes Aircraft Company | Chemical vapor desposition of silicon carbide |
| US4981724A (en) * | 1988-10-27 | 1991-01-01 | Hochberg Arthur K | Deposition of silicon oxide films using alkylsilane liquid sources |
| US5041587A (en) * | 1989-02-14 | 1991-08-20 | Mitsui Toatsu Chemicals, Inc. | Process for preparing organic silicon compound |
-
1991
- 1991-09-18 US US07/762,101 patent/US5204141A/en not_active Expired - Lifetime
-
1992
- 1992-09-16 EP EP92115830A patent/EP0533129A2/en not_active Withdrawn
- 1992-09-17 JP JP4273600A patent/JP2634743B2/ja not_active Expired - Fee Related
- 1992-09-17 KR KR1019920016909A patent/KR960011015B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR960011015B1 (ko) | 1996-08-16 |
| JPH05195228A (ja) | 1993-08-03 |
| US5204141A (en) | 1993-04-20 |
| EP0533129A2 (en) | 1993-03-24 |
| KR930006860A (ko) | 1993-04-22 |
| EP0533129A3 (OSRAM) | 1994-03-02 |
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