JP2597753B2 - Ｎｐｎトランジスターのラッチ電圧を利用した静電耐力向上ラテラルｐｎｐトランジスター - Google Patents

Ｎｐｎトランジスターのラッチ電圧を利用した静電耐力向上ラテラルｐｎｐトランジスター

Info

Publication number
JP2597753B2
JP2597753B2 JP2402505A JP40250590A JP2597753B2 JP 2597753 B2 JP2597753 B2 JP 2597753B2 JP 2402505 A JP2402505 A JP 2402505A JP 40250590 A JP40250590 A JP 40250590A JP 2597753 B2 JP2597753 B2 JP 2597753B2
Authority
JP
Japan
Prior art keywords
diffusion region
type
layer
transistor
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2402505A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0483374A (ja
Inventor
ホ ジン イ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH0483374A publication Critical patent/JPH0483374A/ja
Application granted granted Critical
Publication of JP2597753B2 publication Critical patent/JP2597753B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2402505A 1989-12-16 1990-12-14 Ｎｐｎトランジスターのラッチ電圧を利用した静電耐力向上ラテラルｐｎｐトランジスター Expired - Lifetime JP2597753B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019890018743A KR920010596B1 (ko) 1989-12-16 1989-12-16 Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터럴 pnp 트랜지스터
KR89-18743 1989-12-16

Publications (2)

Publication Number Publication Date
JPH0483374A JPH0483374A (ja) 1992-03-17
JP2597753B2 true JP2597753B2 (ja) 1997-04-09

Family

ID=19293038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2402505A Expired - Lifetime JP2597753B2 (ja) 1989-12-16 1990-12-14 Ｎｐｎトランジスターのラッチ電圧を利用した静電耐力向上ラテラルｐｎｐトランジスター

Country Status (5)

Country Link
JP (1) JP2597753B2 (zh)
KR (1) KR920010596B1 (zh)
CN (1) CN1020027C (zh)
DE (1) DE4040070C2 (zh)
TW (1) TW198136B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6077692B1 (ja) * 2016-03-04 2017-02-08 伸興化成株式会社 リサイクル可能な合成樹脂タイル及びその製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10343681B4 (de) * 2003-09-18 2007-08-09 Atmel Germany Gmbh Halbleiterstruktur und deren Verwendung, insbesondere zum Begrenzen von Überspannungen
CN102280484B (zh) * 2011-08-06 2015-06-03 深圳市稳先微电子有限公司 一种栅源和栅漏过压保护的晶体管功率器件及其制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291319A (en) * 1976-05-19 1981-09-22 National Semiconductor Corporation Open base bipolar transistor protective device
JPS6068721A (ja) * 1983-09-22 1985-04-19 Fujitsu Ltd Ｅｃｌ回路
JPS60253257A (ja) * 1984-05-29 1985-12-13 Sanyo Electric Co Ltd 半導体集積回路装置
JPS6364058A (ja) * 1986-09-05 1988-03-22 Canon Inc 画像形成装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6077692B1 (ja) * 2016-03-04 2017-02-08 伸興化成株式会社 リサイクル可能な合成樹脂タイル及びその製造方法

Also Published As

Publication number Publication date
DE4040070C2 (de) 1997-01-23
KR920010596B1 (ko) 1992-12-10
DE4040070A1 (de) 1991-06-20
KR910013586A (ko) 1991-08-08
TW198136B (zh) 1993-01-11
JPH0483374A (ja) 1992-03-17
CN1052573A (zh) 1991-06-26
CN1020027C (zh) 1993-03-03

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