JP2535082B2 - 双極性相補形金属酸化物半導体出力駆動回路 - Google Patents

双極性相補形金属酸化物半導体出力駆動回路

Info

Publication number
JP2535082B2
JP2535082B2 JP2017636A JP1763690A JP2535082B2 JP 2535082 B2 JP2535082 B2 JP 2535082B2 JP 2017636 A JP2017636 A JP 2017636A JP 1763690 A JP1763690 A JP 1763690A JP 2535082 B2 JP2535082 B2 JP 2535082B2
Authority
JP
Japan
Prior art keywords
transistor
gate
inverter
drain
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2017636A
Other languages
English (en)
Japanese (ja)
Other versions
JPH02235433A (ja
Inventor
リエン チュエン―デル
レウング ウインギュ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INTEGUREITEITSUDO DEBAISU TEKUNOROJII Inc
Original Assignee
INTEGUREITEITSUDO DEBAISU TEKUNOROJII Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INTEGUREITEITSUDO DEBAISU TEKUNOROJII Inc filed Critical INTEGUREITEITSUDO DEBAISU TEKUNOROJII Inc
Publication of JPH02235433A publication Critical patent/JPH02235433A/ja
Application granted granted Critical
Publication of JP2535082B2 publication Critical patent/JP2535082B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01721—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
JP2017636A 1989-01-30 1990-01-26 双極性相補形金属酸化物半導体出力駆動回路 Expired - Lifetime JP2535082B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/303,855 US4933574A (en) 1989-01-30 1989-01-30 BiCMOS output driver
US303855 1989-01-30

Publications (2)

Publication Number Publication Date
JPH02235433A JPH02235433A (ja) 1990-09-18
JP2535082B2 true JP2535082B2 (ja) 1996-09-18

Family

ID=23174005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017636A Expired - Lifetime JP2535082B2 (ja) 1989-01-30 1990-01-26 双極性相補形金属酸化物半導体出力駆動回路

Country Status (4)

Country Link
US (1) US4933574A (de)
EP (1) EP0380960B1 (de)
JP (1) JP2535082B2 (de)
DE (1) DE69007640T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0683058B2 (ja) * 1989-10-06 1994-10-19 株式会社東芝 出力回路
JPH03158018A (ja) * 1989-11-15 1991-07-08 Nec Corp 入力回路
US5148047A (en) * 1990-06-11 1992-09-15 Motorola, Inc. CMOS bus driver circuit with improved speed
US5153457A (en) * 1990-12-12 1992-10-06 Texas Instruments Incorporated Output buffer with di/dt and dv/dt and tri-state control
US6208195B1 (en) 1991-03-18 2001-03-27 Integrated Device Technology, Inc. Fast transmission gate switch
WO1992016998A1 (en) 1991-03-18 1992-10-01 Quality Semiconductor, Inc. Fast transmission gate switch
CA2171307C (en) * 1993-09-16 2004-11-23 Zwie Amitai Scan test circuit using fast transmission gate switch
JP3190199B2 (ja) * 1994-03-16 2001-07-23 株式会社東芝 同相信号出力回路、逆相信号出力回路、二相信号出力回路及び信号出力回路
JP3586467B2 (ja) * 1994-03-25 2004-11-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Ｖｃｃ補償されたダイナミック閥値を備えたＣＭＯＳ入力
US5428303A (en) * 1994-05-20 1995-06-27 National Semiconductor Corporation Bias generator for low ground bounce output driver
US5563543A (en) * 1994-12-14 1996-10-08 Philips Electronics North America Corporation Low-voltage BiCMOS digital delay chain suitable for operation over a wide power supply range
WO1997030398A1 (en) * 1996-02-20 1997-08-21 Intergraph Corporation Apparatus and method for signal handling on gtl-type buses
US6307399B1 (en) 1998-06-02 2001-10-23 Integrated Device Technology, Inc. High speed buffer circuit with improved noise immunity
US6329834B1 (en) * 1999-12-30 2001-12-11 Texas Instruments Incorporated Reduction of switching noise in integrated circuits
US6570405B1 (en) 2001-12-20 2003-05-27 Integrated Device Technology, Inc. Integrated output driver circuits having current sourcing and current sinking characteristics that inhibit power bounce and ground bounce
US6894529B1 (en) 2003-07-09 2005-05-17 Integrated Device Technology, Inc. Impedance-matched output driver circuits having linear characteristics and enhanced coarse and fine tuning control

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57166734A (en) * 1981-04-06 1982-10-14 Matsushita Electric Ind Co Ltd Electronic circuit
JPS60125015A (ja) * 1983-12-12 1985-07-04 Hitachi Ltd インバ−タ回路
JPS61118023A (ja) * 1984-11-14 1986-06-05 Toshiba Corp Ｍｏｓ型半導体集積回路の入力ゲ−ト回路
JP2544343B2 (ja) * 1985-02-07 1996-10-16 株式会社日立製作所 半導体集積回路装置
EP0209805B1 (de) * 1985-07-22 1993-04-07 Hitachi, Ltd. Halbleitereinrichtung mit bipolarem Transistor und Isolierschicht-Feldeffekttransistor
JPS62169520A (ja) * 1986-01-22 1987-07-25 Hitachi Ltd Ｌｓｉ
JPS62220026A (ja) * 1986-03-20 1987-09-28 Toshiba Corp 出力バツフア回路
US4707623A (en) * 1986-07-29 1987-11-17 Rca Corporation CMOS input level shifting buffer circuit
JPS6382122A (ja) * 1986-09-26 1988-04-12 Toshiba Corp 論理回路
US4785201A (en) * 1986-12-29 1988-11-15 Integrated Device Technology, Inc. High speed/high drive CMOS output buffer with inductive bounce suppression

Also Published As

Publication number Publication date
EP0380960A2 (de) 1990-08-08
DE69007640T2 (de) 1994-07-14
EP0380960A3 (en) 1990-12-05
US4933574A (en) 1990-06-12
DE69007640D1 (de) 1994-05-05
JPH02235433A (ja) 1990-09-18
EP0380960B1 (de) 1994-03-30

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