JP2534434B2 - 耐酸化性化合物およびその製造方法 - Google Patents

耐酸化性化合物およびその製造方法

Info

Publication number
JP2534434B2
JP2534434B2 JP5073947A JP7394793A JP2534434B2 JP 2534434 B2 JP2534434 B2 JP 2534434B2 JP 5073947 A JP5073947 A JP 5073947A JP 7394793 A JP7394793 A JP 7394793A JP 2534434 B2 JP2534434 B2 JP 2534434B2
Authority
JP
Japan
Prior art keywords
semiconductor
compound
transition element
copper
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP5073947A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0621056A (ja
Inventor
モハメド・オサマ・アブールフォトフ
リア・クルスィン＝エルバウム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPH0621056A publication Critical patent/JPH0621056A/ja
Application granted granted Critical
Publication of JP2534434B2 publication Critical patent/JP2534434B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53233—Copper alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP5073947A 1992-04-30 1993-03-31 耐酸化性化合物およびその製造方法 Expired - Fee Related JP2534434B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US87666992A 1992-04-30 1992-04-30
US876669 1992-04-30

Publications (2)

Publication Number Publication Date
JPH0621056A JPH0621056A (ja) 1994-01-28
JP2534434B2 true JP2534434B2 (ja) 1996-09-18

Family

ID=25368329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5073947A Expired - Fee Related JP2534434B2 (ja) 1992-04-30 1993-03-31 耐酸化性化合物およびその製造方法

Country Status (2)

Country Link
EP (1) EP0567867A2 (enExample)
JP (1) JP2534434B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6575165B1 (en) * 2000-08-03 2003-06-10 3M Innovative Properties Company Apparatus and method for breathing apparatus component coupling
US6703307B2 (en) 2001-11-26 2004-03-09 Advanced Micro Devices, Inc. Method of implantation after copper seed deposition
US7696092B2 (en) * 2001-11-26 2010-04-13 Globalfoundries Inc. Method of using ternary copper alloy to obtain a low resistance and large grain size interconnect
US6835655B1 (en) 2001-11-26 2004-12-28 Advanced Micro Devices, Inc. Method of implanting copper barrier material to improve electrical performance
US6703308B1 (en) 2001-11-26 2004-03-09 Advanced Micro Devices, Inc. Method of inserting alloy elements to reduce copper diffusion and bulk diffusion
US6861349B1 (en) 2002-05-15 2005-03-01 Advanced Micro Devices, Inc. Method of forming an adhesion layer with an element reactive with a barrier layer
US7169706B2 (en) 2003-10-16 2007-01-30 Advanced Micro Devices, Inc. Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition
CN112342422A (zh) * 2020-10-27 2021-02-09 湖北新蓝天新材料股份有限公司 一种铜硅合金材料及其制备方法和应用

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2511289B2 (ja) * 1988-03-30 1996-06-26 株式会社日立製作所 半導体装置
DE69132842T2 (de) * 1990-08-01 2002-08-01 Ibm Nassätzverfahren mit hoher Selektivität zwischen Cu und Cu3Ge
US5130274A (en) * 1991-04-05 1992-07-14 International Business Machines Corporation Copper alloy metallurgies for VLSI interconnection structures
JP3220760B2 (ja) * 1992-03-19 2001-10-22 株式会社日立製作所 半導体装置

Also Published As

Publication number Publication date
EP0567867A3 (enExample) 1994-03-09
JPH0621056A (ja) 1994-01-28
EP0567867A2 (en) 1993-11-03

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