JP2523168Y2 - 化合物半導体装置 - Google Patents
化合物半導体装置Info
- Publication number
- JP2523168Y2 JP2523168Y2 JP1990080552U JP8055290U JP2523168Y2 JP 2523168 Y2 JP2523168 Y2 JP 2523168Y2 JP 1990080552 U JP1990080552 U JP 1990080552U JP 8055290 U JP8055290 U JP 8055290U JP 2523168 Y2 JP2523168 Y2 JP 2523168Y2
- Authority
- JP
- Japan
- Prior art keywords
- active region
- region
- contact
- recess
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000001875 compounds Chemical class 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990080552U JP2523168Y2 (ja) | 1990-07-27 | 1990-07-27 | 化合物半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990080552U JP2523168Y2 (ja) | 1990-07-27 | 1990-07-27 | 化合物半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0438039U JPH0438039U (enrdf_load_stackoverflow) | 1992-03-31 |
| JP2523168Y2 true JP2523168Y2 (ja) | 1997-01-22 |
Family
ID=31625719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990080552U Expired - Lifetime JP2523168Y2 (ja) | 1990-07-27 | 1990-07-27 | 化合物半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2523168Y2 (enrdf_load_stackoverflow) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5382179A (en) * | 1976-12-27 | 1978-07-20 | Fujitsu Ltd | Field effect transistor |
| JPS53119866U (enrdf_load_stackoverflow) * | 1977-02-28 | 1978-09-22 | ||
| JPS6233476A (ja) * | 1985-08-06 | 1987-02-13 | Nec Corp | 電界効果トランジスタおよびその製造方法 |
-
1990
- 1990-07-27 JP JP1990080552U patent/JP2523168Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0438039U (enrdf_load_stackoverflow) | 1992-03-31 |
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