JP2510231Y2 - Dmosトランジスタ - Google Patents
DmosトランジスタInfo
- Publication number
- JP2510231Y2 JP2510231Y2 JP13035090U JP13035090U JP2510231Y2 JP 2510231 Y2 JP2510231 Y2 JP 2510231Y2 JP 13035090 U JP13035090 U JP 13035090U JP 13035090 U JP13035090 U JP 13035090U JP 2510231 Y2 JP2510231 Y2 JP 2510231Y2
- Authority
- JP
- Japan
- Prior art keywords
- concentration impurity
- impurity region
- drain
- region
- dmos transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000012535 impurity Substances 0.000 claims description 72
- 238000002513 implantation Methods 0.000 claims description 15
- 230000015556 catabolic process Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13035090U JP2510231Y2 (ja) | 1990-11-30 | 1990-11-30 | Dmosトランジスタ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13035090U JP2510231Y2 (ja) | 1990-11-30 | 1990-11-30 | Dmosトランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0487660U JPH0487660U (enrdf_load_stackoverflow) | 1992-07-30 |
JP2510231Y2 true JP2510231Y2 (ja) | 1996-09-11 |
Family
ID=31877702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13035090U Expired - Fee Related JP2510231Y2 (ja) | 1990-11-30 | 1990-11-30 | Dmosトランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2510231Y2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009212110A (ja) * | 2008-02-29 | 2009-09-17 | Renesas Technology Corp | トランジスタおよびその製造方法 |
JP5418041B2 (ja) * | 2009-07-24 | 2014-02-19 | 株式会社リコー | 半導体装置 |
JP6299390B2 (ja) * | 2014-04-25 | 2018-03-28 | 富士電機株式会社 | 半導体装置 |
-
1990
- 1990-11-30 JP JP13035090U patent/JP2510231Y2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0487660U (enrdf_load_stackoverflow) | 1992-07-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |