JP2025510560A5 - - Google Patents

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Publication number
JP2025510560A5
JP2025510560A5 JP2024552761A JP2024552761A JP2025510560A5 JP 2025510560 A5 JP2025510560 A5 JP 2025510560A5 JP 2024552761 A JP2024552761 A JP 2024552761A JP 2024552761 A JP2024552761 A JP 2024552761A JP 2025510560 A5 JP2025510560 A5 JP 2025510560A5
Authority
JP
Japan
Prior art keywords
composite structure
support substrate
thin layer
manufacturing
crystal thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024552761A
Other languages
English (en)
Japanese (ja)
Other versions
JP2025510560A (ja
Filing date
Publication date
Priority claimed from FR2202859A external-priority patent/FR3134234B1/fr
Application filed filed Critical
Publication of JP2025510560A publication Critical patent/JP2025510560A/ja
Publication of JP2025510560A5 publication Critical patent/JP2025510560A5/ja
Pending legal-status Critical Current

Links

JP2024552761A 2022-03-30 2023-03-10 多結晶炭化ケイ素製の支持基板上の単結晶薄層を含む複合構造体、および関連する製造方法 Pending JP2025510560A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR2202859 2022-03-30
FR2202859A FR3134234B1 (fr) 2022-03-30 2022-03-30 Structure composite comprenant une couche mince monocristalline sur un substrat support en carbure de silicium poly-cristallin et procede de fabrication associe
PCT/EP2023/056240 WO2023186498A1 (fr) 2022-03-30 2023-03-10 Structure composite comprenant une couche mince monocristalline sur un substrat support en carbure de silicium poly-cristallin et procede de fabrication associe

Publications (2)

Publication Number Publication Date
JP2025510560A JP2025510560A (ja) 2025-04-15
JP2025510560A5 true JP2025510560A5 (https=) 2026-01-21

Family

ID=82196623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024552761A Pending JP2025510560A (ja) 2022-03-30 2023-03-10 多結晶炭化ケイ素製の支持基板上の単結晶薄層を含む複合構造体、および関連する製造方法

Country Status (7)

Country Link
EP (1) EP4500575A1 (https=)
JP (1) JP2025510560A (https=)
KR (1) KR20240165938A (https=)
CN (1) CN118922912A (https=)
FR (1) FR3134234B1 (https=)
TW (1) TW202343780A (https=)
WO (1) WO2023186498A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3142829B1 (fr) 2022-12-05 2026-01-02 Soitec Silicon On Insulator Procédé de fabrication d’un substrat pour un dispositif électronique de puissance ou radiofréquence
US20240332365A1 (en) 2023-03-31 2024-10-03 Stmicroelectronics International N.V. Low resistivity polycrystalline based substrate or wafer
FR3160512A1 (fr) * 2024-03-25 2025-09-26 Soitec Dispositif monolithique incluant un transistor et un condensateur cointégrés sur un substrat à base de diamant, et procédé de fabrication d’un tel dispositif
FR3160513A1 (fr) * 2024-03-25 2025-09-26 Soitec Dispositif monolithique incluant un transistor et un condensateur cointégrés sur un substrat à base de diamant, et procédé de fabrication d’un tel dispositif
FR3160520A1 (fr) * 2024-03-25 2025-09-26 Soitec Dispositif monolithique incluant un transistor et un condensateur cointégrés sur un substrat à base de diamant, et procédé de fabrication d’un tel dispositif
FR3165752A1 (fr) * 2024-08-21 2026-02-27 Soitec Procédé de fabrication d’une structure composite incluant une couche mince monocristalline transférée sur un substrat support
FR3165753A1 (fr) * 2024-08-21 2026-02-27 Soitec Procédé de fabrication d’une structure composite incluant une couche mince monocristalline transférée sur un substrat support

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6619874B2 (ja) 2016-04-05 2019-12-11 株式会社サイコックス 多結晶SiC基板およびその製造方法

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