KR20240165938A - 다결정 탄화규소로 제조된 지지 기재 상에 단결정 박층을 포함하는 복합 구조체 및 관련 제조 방법 - Google Patents
다결정 탄화규소로 제조된 지지 기재 상에 단결정 박층을 포함하는 복합 구조체 및 관련 제조 방법 Download PDFInfo
- Publication number
- KR20240165938A KR20240165938A KR1020247029841A KR20247029841A KR20240165938A KR 20240165938 A KR20240165938 A KR 20240165938A KR 1020247029841 A KR1020247029841 A KR 1020247029841A KR 20247029841 A KR20247029841 A KR 20247029841A KR 20240165938 A KR20240165938 A KR 20240165938A
- Authority
- KR
- South Korea
- Prior art keywords
- composite structure
- thin layer
- support substrate
- manufacturing
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
- H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
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- H01L21/185—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
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- H01L21/02002—
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- H01L21/0405—
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- H01L21/0445—
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- H01L29/1602—
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- H01L29/1608—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/8303—Diamond
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Laminated Bodies (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FRFR2202859 | 2022-03-30 | ||
| FR2202859A FR3134234B1 (fr) | 2022-03-30 | 2022-03-30 | Structure composite comprenant une couche mince monocristalline sur un substrat support en carbure de silicium poly-cristallin et procede de fabrication associe |
| PCT/EP2023/056240 WO2023186498A1 (fr) | 2022-03-30 | 2023-03-10 | Structure composite comprenant une couche mince monocristalline sur un substrat support en carbure de silicium poly-cristallin et procede de fabrication associe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240165938A true KR20240165938A (ko) | 2024-11-25 |
Family
ID=82196623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247029841A Pending KR20240165938A (ko) | 2022-03-30 | 2023-03-10 | 다결정 탄화규소로 제조된 지지 기재 상에 단결정 박층을 포함하는 복합 구조체 및 관련 제조 방법 |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP4500575A1 (https=) |
| JP (1) | JP2025510560A (https=) |
| KR (1) | KR20240165938A (https=) |
| CN (1) | CN118922912A (https=) |
| FR (1) | FR3134234B1 (https=) |
| TW (1) | TW202343780A (https=) |
| WO (1) | WO2023186498A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3142829B1 (fr) | 2022-12-05 | 2026-01-02 | Soitec Silicon On Insulator | Procédé de fabrication d’un substrat pour un dispositif électronique de puissance ou radiofréquence |
| US20240332365A1 (en) | 2023-03-31 | 2024-10-03 | Stmicroelectronics International N.V. | Low resistivity polycrystalline based substrate or wafer |
| FR3160512A1 (fr) * | 2024-03-25 | 2025-09-26 | Soitec | Dispositif monolithique incluant un transistor et un condensateur cointégrés sur un substrat à base de diamant, et procédé de fabrication d’un tel dispositif |
| FR3160513A1 (fr) * | 2024-03-25 | 2025-09-26 | Soitec | Dispositif monolithique incluant un transistor et un condensateur cointégrés sur un substrat à base de diamant, et procédé de fabrication d’un tel dispositif |
| FR3160520A1 (fr) * | 2024-03-25 | 2025-09-26 | Soitec | Dispositif monolithique incluant un transistor et un condensateur cointégrés sur un substrat à base de diamant, et procédé de fabrication d’un tel dispositif |
| FR3165752A1 (fr) * | 2024-08-21 | 2026-02-27 | Soitec | Procédé de fabrication d’une structure composite incluant une couche mince monocristalline transférée sur un substrat support |
| FR3165753A1 (fr) * | 2024-08-21 | 2026-02-27 | Soitec | Procédé de fabrication d’une structure composite incluant une couche mince monocristalline transférée sur un substrat support |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6619874B2 (ja) | 2016-04-05 | 2019-12-11 | 株式会社サイコックス | 多結晶ＳｉＣ基板およびその製造方法 |
-
2022
- 2022-03-30 FR FR2202859A patent/FR3134234B1/fr active Active
-
2023
- 2023-03-06 TW TW112108051A patent/TW202343780A/zh unknown
- 2023-03-10 KR KR1020247029841A patent/KR20240165938A/ko active Pending
- 2023-03-10 EP EP23709735.7A patent/EP4500575A1/fr active Pending
- 2023-03-10 JP JP2024552761A patent/JP2025510560A/ja active Pending
- 2023-03-10 CN CN202380026936.9A patent/CN118922912A/zh active Pending
- 2023-03-10 WO PCT/EP2023/056240 patent/WO2023186498A1/fr not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| FR3134234A1 (fr) | 2023-10-06 |
| FR3134234B1 (fr) | 2024-02-23 |
| CN118922912A (zh) | 2024-11-08 |
| TW202343780A (zh) | 2023-11-01 |
| JP2025510560A (ja) | 2025-04-15 |
| EP4500575A1 (fr) | 2025-02-05 |
| WO2023186498A1 (fr) | 2023-10-05 |
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| P22-X000 | Classification modified |
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