TW202343780A - 在多晶碳化矽支撐底材上包含單晶薄膜之複合結構及其製作方法 - Google Patents

在多晶碳化矽支撐底材上包含單晶薄膜之複合結構及其製作方法 Download PDF

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Publication number
TW202343780A
TW202343780A TW112108051A TW112108051A TW202343780A TW 202343780 A TW202343780 A TW 202343780A TW 112108051 A TW112108051 A TW 112108051A TW 112108051 A TW112108051 A TW 112108051A TW 202343780 A TW202343780 A TW 202343780A
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TW
Taiwan
Prior art keywords
composite structure
substrate
thin layer
silicon carbide
support substrate
Prior art date
Application number
TW112108051A
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English (en)
Chinese (zh)
Inventor
雨果 比阿德
亞歷山大 帕提耶
馬克 費拉圖
帕布羅 勒夫芮
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法商索泰克公司
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Application filed by 法商索泰克公司 filed Critical 法商索泰克公司
Publication of TW202343780A publication Critical patent/TW202343780A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
    • C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Laminated Bodies (AREA)
  • Recrystallisation Techniques (AREA)
TW112108051A 2022-03-30 2023-03-06 在多晶碳化矽支撐底材上包含單晶薄膜之複合結構及其製作方法 TW202343780A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FRFR2202859 2022-03-30
FR2202859A FR3134234B1 (fr) 2022-03-30 2022-03-30 Structure composite comprenant une couche mince monocristalline sur un substrat support en carbure de silicium poly-cristallin et procede de fabrication associe

Publications (1)

Publication Number Publication Date
TW202343780A true TW202343780A (zh) 2023-11-01

Family

ID=82196623

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112108051A TW202343780A (zh) 2022-03-30 2023-03-06 在多晶碳化矽支撐底材上包含單晶薄膜之複合結構及其製作方法

Country Status (7)

Country Link
EP (1) EP4500575A1 (https=)
JP (1) JP2025510560A (https=)
KR (1) KR20240165938A (https=)
CN (1) CN118922912A (https=)
FR (1) FR3134234B1 (https=)
TW (1) TW202343780A (https=)
WO (1) WO2023186498A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3142829B1 (fr) 2022-12-05 2026-01-02 Soitec Silicon On Insulator Procédé de fabrication d’un substrat pour un dispositif électronique de puissance ou radiofréquence
US20240332365A1 (en) 2023-03-31 2024-10-03 Stmicroelectronics International N.V. Low resistivity polycrystalline based substrate or wafer
FR3160512A1 (fr) * 2024-03-25 2025-09-26 Soitec Dispositif monolithique incluant un transistor et un condensateur cointégrés sur un substrat à base de diamant, et procédé de fabrication d’un tel dispositif
FR3160513A1 (fr) * 2024-03-25 2025-09-26 Soitec Dispositif monolithique incluant un transistor et un condensateur cointégrés sur un substrat à base de diamant, et procédé de fabrication d’un tel dispositif
FR3160520A1 (fr) * 2024-03-25 2025-09-26 Soitec Dispositif monolithique incluant un transistor et un condensateur cointégrés sur un substrat à base de diamant, et procédé de fabrication d’un tel dispositif
FR3165752A1 (fr) * 2024-08-21 2026-02-27 Soitec Procédé de fabrication d’une structure composite incluant une couche mince monocristalline transférée sur un substrat support
FR3165753A1 (fr) * 2024-08-21 2026-02-27 Soitec Procédé de fabrication d’une structure composite incluant une couche mince monocristalline transférée sur un substrat support

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6619874B2 (ja) 2016-04-05 2019-12-11 株式会社サイコックス 多結晶ＳｉＣ基板およびその製造方法

Also Published As

Publication number Publication date
KR20240165938A (ko) 2024-11-25
FR3134234A1 (fr) 2023-10-06
FR3134234B1 (fr) 2024-02-23
CN118922912A (zh) 2024-11-08
JP2025510560A (ja) 2025-04-15
EP4500575A1 (fr) 2025-02-05
WO2023186498A1 (fr) 2023-10-05

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