TWI226309B - Method for fabricating a diamond film having low surface roughness - Google Patents

Abstract

A process for making a diamond film with low surface roughness. A substrate is provided. A diamond layer is deposited on the substrate. A binder layer is coated over the diamond layer. A carrier plate is provided to join with the binder layer, thereby forming a laminate structure. The substrate is then removed, thereby obtaining a diamond film with a low surface roughness with respect to the surface roughness of the removed substrate.

Description

1226309 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention is a diamond film structure manufacturing process with a low surface roughness, especially f is used for a surface acoustic wave transformer (SA) having a diamond film with a low surface roughness. Fi 1 ter) or transfer head manufacturing for nano transfer technology. [Previous technology] Diamonds have excellent physical and chemical characteristics, so they have been widely used in traditional cutting tools and optical communication components. At present, they are all used in the form of rhenium film. The diamond film is usually Thermal filament chemical vapor deposition (f ° ^, fllament cvd) and plasma-assisted chemical gas deposition (Plasma assisted CVD, Plasma assisted CVD, etc.) are deposited on the substrate 'and the surface roughness of the diamond film is deposited regardless of the method used (Averagesu [facer 〇u ghne ss) is about several micrometers (" melon), for the production of electrical 2 element substrate 5, such a high surface roughness can not be applied to precision electronic components. It is shown that when the above method is used on the carrier plate 1 03 " M shell diamond film 20a, because the surface of the diamond 20a is relatively rough, so if you want to obtain a surface with a low surface roughness, you must rely on The planarization process can only be achieved: a =. The flattening plus soil: usually performed by mechanical energy or energy beam methods, such as mechanical polishing, i plus auxiliary grinding, thermochemical mechanical processing, and the like. ^ The well-known diamond film flattening process still has disadvantages: After the surface of the diamond film is processed by mechanical energy or energy beam, its surface roughness

I Page 7 1226309 V. Description of the invention (2) One can be processed to several micrometers (#m), but it usually takes several days', so it takes too long, and increases the cost of process equipment, and makes the process technology door Tan is higher. The reason is that the inventor based on these deficiencies and based on years of relevant experience in manufacturing products, carefully observed and researched them, and devoted himself to studying and cooperating with the application of science, to propose a present invention with a reasonable design and effective improvement of the aforementioned deficiencies. [Summary of the Invention] An object of the present invention is to provide a diamond film structure manufacturing process with a low surface roughness to reduce the roughness of the diamond film surface. The second object of the present invention is to provide a diamond film structure process with a low surface roughness to simplify the process technology and reduce the process time. The third object of the present invention is to provide a diamond film structure manufacturing process with low surface roughness to manufacture a diamond film surface with low surface roughness and microstructure. According to the foregoing object of the invention, 'The present invention is a diamond film structure manufacturing process with a low surface roughness. One embodiment of the method includes: providing a substrate; on' to form a multilayer junction and depositing a diamond film layer on the substrate; Gluing a bonding agent on the diamond film layer; providing a carrier plate which is bonded to the bonding agent structure; and removing the substrate diamond film. Thereby, a low surface roughness relative to the substrate is obtained.

Page 1226309 V. Description of the invention (3) In addition, the steps of the second embodiment of the present invention include: providing a substrate; depositing a diamond film layer on the substrate; plating a conductive film on the diamond film layer; A thick metal film on the conductive film; and removing the substrate to obtain a diamond film with a low surface roughness relative to the substrate. Furthermore, the steps in the third embodiment of the present invention include:

Provide a substrate and a carrier plate each having a corresponding deposition surface; ... arrange the substrate and the carrier plate so that a predetermined deposition film interval is formed between the corresponding deposition surfaces; a chemical vapor deposition gas is passed in the Deposited film spacing to deposit a diamond film within the deposited film spacing and adhere to the substrate and the deposition surface of the carrier plate; and remove the diamond film of the substrate roughness to obtain a lower relative to the substrate deposition surface Rough surface

In order to make your examiner better, please refer to the following description of the present invention for reference and explanation only. Step by step to understand the detailed description and drawings of the features and technology of the present invention, but it is not intended to limit the present invention. [Embodiment] ^ This Maoming is a kind of low surface coarse sugar ^ using bonding and etching instead of using Diamond film surface with mechanical energy, according to the process of obtaining large area and low surface diamond film structure, or diamond film with flat surface roughness by energy beam method

$ 9 pages 1226309 Description of the invention ‘and therefore simplify the process without the need for complicated and expensive equipment to save rent and material resources’ and greatly shorten the process time. % Refer to the second chart A to second chart D, which first provides a low meter

Substrate 10 with a rough roundness deposition surface, the substrate 10 may be silicon (S 1), surface alloy (Mo A1 loy), graphite (Graphite), or tungsten carbide (WC), etc., and an intermediate layer is sputter-plated first. 15 On the deposition surface of the substrate t 0, the thickness is a few nanometers, and the material may be aluminum nitride or carbide carbide, and then a diamond film is deposited on the intermediate layer 15 by chemical deposition. A bonding agent 30 is bonded to the surface of the diamond film 20, and the bonding agent 30 may be a polymer composite material, a sol-gel (s 〇1—ge 1), an epoxy resin, a UV-sensitive resin, and a glass bond. Agent or metal composite material, such as low temperature hardening bonding agent, and then provide a carrier plate 40 and glued to the bonding agent 30. When the bonding agent 30 is a UV-sensitive resin, the carrier plate 40 must be a transparent carrier plate Such as a quartz glass plate, etc., when the transparent carrier plate 40 is placed on the UV photosensitive resin, and the transparent carrier plate 40 is passed through to irradiate u UV light to the UV photosensitive resin, so that the u V photosensitive tree Lai was bonded to the transparent carrier plate 40 and the diamond film 20, and finally the " Hai substrate 10 and the intermediate layer were removed at the same time. 15. The removal method can be removed by wet or dry etching methods such as κ〇Η, Η Ν Α, etc., and a diamond film with low surface roughness can be obtained after inversion, wherein the intermediate layer 1 5 is used as a buffer layer between the edge diamond film 20 and the substrate 10 to prevent the peeling phenomenon caused by the different expansion between each other, and before the carrier plate 40 is bonded to the step of bonding agent 30, The joint surface of the carrier plate 40

Page 10 1226309 V. Description of the invention (5) A plurality of micro-grooves 41 are etched and are concentric circles (as shown in the third figure), so that the micro-grooves 41 can absorb the diamond film 20, the bonding agent 3 ′ and the micro-deformation caused by the thermal expansion of the carrier plate 40 to prevent the diamond film 20 and the carrier plate 40 from peeling off due to thermal expansion, and is used in the low-roughness diamond film structure manufacturing process. The intermediate layer 15 may be omitted depending on the situation. Please refer to the fourth figure A to the fourth figure D, in which a substrate 1 with a low surface roughness deposition surface is provided first, and the material can be as described above, and then deposited. The diamond film 20 is on the intermediate layer 15, and then a conductive layer 50 is plated on the diamond film 20 in the manner of a bell. The conductive layer 50 can be recorded as (Ni) or recorded. (Ni — Co), Chin (Ti-N i) and Shao (A 1), and then electro-forged a thick film on the conductive layer 50 with a thick metal film 60 such as nickel (N i), etc. To form a structure (base & 1 0 / intermediate layer 15 / diamond film 2 0 / conductive layer 5 0 / metal ^ film 6 0), and finally use wet or dry etching to move The substrate 10 and the intermediate layer 15 ′ can obtain a diamond film 20 surface with a low surface roughness originally attached to the deposition surface of the substrate 10 to form (diamond film 20 / conductive layer 50 / metal Thick film 60), so the surface of the diamond film 20 is very easy to reach the nanometer (nm) level of coarse chain degree, in which the intermediate layer 15 is in a condition that will be omitted. Please refer to the fifth graph A to fifth graph D, in order to make the diamond film with a low surface roughness to have a special concave-convex shape or a curved shape, here are provided a substrate 10 and a carrier plate 40 each having a phase Corresponds to the deposition surface, and the deposition surface of the substrate 10 is of low roughness.

Page 11 1226309 V. Description of the invention (6) The substrate 10 and the carrier plate 40 are arranged on the deposition surface of the substrate 10 so that a predetermined deposition film interval 7 is formed between the corresponding deposition surfaces. Then, a chemical vapor deposition gas is passed through the deposited film at a distance of 70 ′ to deposit the diamond film 20 on the intermediate layer 15 of the substrate 10 and the deposition surface on the carrier plate 40. Figure C. Finally, the substrate 10 and the intermediate layer 15 are removed to obtain a diamond film 20 surface with a low surface roughness relative to the substrate 10 deposition surface, and the diamond film 20 is attached to the substrate. On the deposition surface on the carrier plate 40, the intermediate layer 15 is used as a buffer layer between the diamond film 20 and the substrate 10 to prevent the peeling phenomenon caused by thermal expansion between each other 'and the intermediate layer 1 5 may be omitted according to circumstances. The deposition surface of the carrier plate 40 is etched with a plurality of micro-grooves 41 and as described above, so that the micro-grooves 41 can absorb the thermal expansion of the diamond film 20 and the carrier plate 40. The slight deformation 'prevents the diamond film 20 and the carrier plate 40 from peeling due to thermal expansion. In summary, the "diamond film structure manufacturing process with low surface roughness" 4 of the present invention reduces the surface roughness of the diamond film to the nanometer (ηm) level, and simplifies the process technology and reduces the process time. However, the above are only the preferred and feasible embodiments of the present invention. Therefore, the scope of the patents of the invention is not limited to the scope of the invention. Within, nothing was given to Chen Ming.

1226309 Brief description of the drawings [Simplified illustration of the drawings] The first picture is a side view of a conventional diamond membrane structure. The second diagram A to the second diagram D are process flow charts of the first embodiment of the present invention. The third diagram is an isometric view of the carrier plate 40 of the present invention. The fourth diagram A to the fourth diagram D are the process flow diagrams of the second embodiment of the present invention. The fifth diagram A to the fifth diagram D are the process flow diagrams of the third embodiment of the present invention. 0 Diamond film 2 0 Inventive substrate 1 0 Intermediate layer 1 5 Diamond film 2 0 Bonding agent 3 0 Carrier board 4 0 Conductive layer 5 0 Thick metal film 6 0 Deposited film pitch 7 0

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Claims (1)

1226309 VI. Patent application package 1 、 A diamond film structure manufacturing process with low surface roughness, including: ~ Provide a substrate; deposit a diamond film layer on the substrate; apply a low temperature hardening bonding agent to the diamond On the film layer; the junction provides a carrier plate, which is combined with the bonding agent to form an overnight structure; and the substrate is removed by wet or dry etching to obtain a diamond with a low surface roughness of the substrate membrane. 2. The diamond film structure manufacturing process with low surface roughness as described in item 1 of the scope of the patent application, wherein the bonding agent is a photosensitive resin and the carrier plate is a transparent plate. 3. The diamond film structure manufacturing process with low surface roughness as described in item 2 of the declared patent scope, wherein the photosensitive resin is an ultraviolet (U V) photosensitive resin. 4. The process of drilling and stone film structure with low surface roughness as described in item 2 of the scope of patent application, wherein the carrier plate is a quartz glass plate. 5. The diamond film structure manufacturing process with low surface roughness as described in item 1 of the scope of the patent application, wherein before depositing a diamond film layer, an intermediate layer is deposited on the substrate, and then the diamond film is deposited on the intermediate layer. on. Page 14 1226309 VI. Scope of patent application 6. The diamond film structure process with low surface roughness as described in item 1 of the scope of patent application, wherein the step of removing the substrate includes removing the intermediate layer. 7 The process of drilling the membrane structure with a low surface roughness as described in item 1 of the scope of the patent application, wherein the bonding surface of the carrier plate has a plurality of micro-grooves. 0 8. The diamond film structure manufacturing process with low surface roughness as described in item 1 of the scope of the patent application, wherein the bonding agent is an ultraviolet light-sensitive resin, and the carrier plate is a transparent plate, and the carrier plate is bonded to the The step of bonding agent includes: placing the carrier plate on the bonding agent; and exposing the bonding agent to ultraviolet light through the carrier plate, thereby bonding the carrier plate to the bonding agent. 9 A diamond membrane structure manufacturing process with low surface roughness, the steps include: Providing a substrate; depositing a diamond film layer on the substrate; plating a conductive film on the diamond film layer; plating a thick metal film on the conductive film; and removing the substrate by wet or dry etching To get relative to 1226309 6. Scope of patent application The substrate has a low surface roughness diamond film. 10. The diamond film structure manufacturing process with low surface roughness as described in item 9 of the scope of patent application, wherein the conductive film is deposited on the diamond film layer by sputtering. 11. The diamond film structure manufacturing process with low surface roughness as described in item 9 of the scope of patent application, wherein the metal thick film is plated on the conductive film by electroplating. 12. A diamond film structure manufacturing process with low surface roughness, the steps include: providing a substrate and a carrier plate, each of which has a corresponding deposition surface; arranging the substrate and the carrier plate between the corresponding deposition surfaces Forming a predetermined deposition film interval; 'pass in a chemical vapor deposition gas to the deposition film interval to deposit a diamond film within the deposition film interval and attach to the substrate and the deposition surface on the carrier plate; And removing the substrate by wet or dry etching to obtain a diamond film with a low surface roughness relative to the deposition surface of the substrate. 13. The diamond film structure manufacturing process with low surface coarse bond as described in item 12 of the patent application scope, further comprising sputtering an intermediate layer on the sunken surface of the substrate, and then depositing a diamond film on the intermediate layer of the substrate. On and on the carrier board = Page 16 1226309 VI. Scope of patent application 14. The diamond film structure manufacturing process with low surface roughness as described in item 12 of the scope of the patent application, wherein the step of removing the substrate simultaneously removes the intermediate layer. 15. The diamond film structure manufacturing process with low surface roughness as described in item 12 of the scope of the patent application, wherein the deposition surface of the carrier plate has a plurality of micro-grooves. Page 17