JP2025094086A5 - - Google Patents

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Publication number
JP2025094086A5
JP2025094086A5 JP2025043467A JP2025043467A JP2025094086A5 JP 2025094086 A5 JP2025094086 A5 JP 2025094086A5 JP 2025043467 A JP2025043467 A JP 2025043467A JP 2025043467 A JP2025043467 A JP 2025043467A JP 2025094086 A5 JP2025094086 A5 JP 2025094086A5
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Japan
Prior art keywords
radiation
sensitive layer
heating
average thickness
organotin
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JP2025043467A
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English (en)
Japanese (ja)
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JP7837448B2 (ja
JP2025094086A (ja
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Priority claimed from JP2022504087A external-priority patent/JP7715703B2/ja
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JP2025043467A 2019-07-22 2025-03-18 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用 Active JP7837448B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962876842P 2019-07-22 2019-07-22
US62/876,842 2019-07-22
JP2022504087A JP7715703B2 (ja) 2019-07-22 2020-07-21 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用
PCT/US2020/042857 WO2021016229A1 (en) 2019-07-22 2020-07-21 Organometallic metal chalcogenide clusters and application to lithography

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2022504087A Division JP7715703B2 (ja) 2019-07-22 2020-07-21 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用

Publications (3)

Publication Number Publication Date
JP2025094086A JP2025094086A (ja) 2025-06-24
JP2025094086A5 true JP2025094086A5 (https=) 2025-08-19
JP7837448B2 JP7837448B2 (ja) 2026-03-30

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ID=74189783

Family Applications (2)

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JP2022504087A Active JP7715703B2 (ja) 2019-07-22 2020-07-21 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用
JP2025043467A Active JP7837448B2 (ja) 2019-07-22 2025-03-18 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用

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JP2022504087A Active JP7715703B2 (ja) 2019-07-22 2020-07-21 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用

Country Status (6)

Country Link
US (2) US20210026241A1 (https=)
EP (2) EP4004649B1 (https=)
JP (2) JP7715703B2 (https=)
KR (2) KR102841238B1 (https=)
TW (1) TWI856141B (https=)
WO (1) WO2021016229A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020210660A1 (en) 2019-04-12 2020-10-15 Inpria Corporation Organometallic photoresist developer compositions and processing methods
US11579531B2 (en) * 2019-09-25 2023-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Organometallic cluster photoresists for EUV lithography
EP4115242A4 (en) * 2020-03-02 2024-03-13 Inpria Corporation PROCESSING ENVIRONMENT FOR THE FORMATION OF INORGANIC RESERVE PATTERNS
US20220365428A1 (en) * 2021-05-14 2022-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist materials and associated methods
US11906901B2 (en) 2021-06-07 2024-02-20 International Business Machines Corporation Alternating copolymer chain scission photoresists
CN114736236B (zh) * 2022-03-21 2023-09-29 中国科学院福建物质结构研究所 一种多核环状有机锡氧硫簇合物及其制备方法和应用
CN117148669B (zh) * 2022-05-24 2025-11-14 上海新阳半导体材料股份有限公司 一种euv光刻胶及其制备方法和应用
CN117417371A (zh) * 2022-07-11 2024-01-19 中国科学院福建物质结构研究所 一种p1型零维金属硫属簇合物以及制备方法和应用
KR102904140B1 (ko) * 2022-08-19 2025-12-23 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
CN117659420A (zh) 2022-08-29 2024-03-08 清华大学 一种Zn基有机配位纳米颗粒、光刻胶组合物及其制备方法与应用
US20240168373A1 (en) * 2022-10-11 2024-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and formation method thereof
KR102839122B1 (ko) 2023-01-23 2025-07-28 닛산 가가쿠 가부시키가이샤 금속 산화물 레지스트 패턴 형성용 유기 수지 조성물
KR20250160464A (ko) 2023-02-28 2025-11-13 닛산 가가쿠 가부시키가이샤 탄소-탄소 이중 결합을 가지는 실리콘 함유 레지스트 하층막 형성용 조성물
CN116375762B (zh) * 2023-04-06 2024-10-01 中国科学院福建物质结构研究所 一种镧锡异金属氧硫簇合物及其制备方法和应用
CN116478205B (zh) * 2023-04-25 2024-10-01 中国科学院福建物质结构研究所 一种亚硒酸根配位的有机锡氧簇合物及其制备方法和应用
JPWO2024242121A1 (https=) 2023-05-24 2024-11-28
JPWO2024242120A1 (https=) * 2023-05-24 2024-11-28
JP2026000111A (ja) 2024-06-17 2026-01-05 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2873288A (en) 1956-09-18 1959-02-10 Metal & Thermit Corp Process for the preparation of vinyl tin compounds
US4255320A (en) * 1978-06-08 1981-03-10 Argus Chemical Corporation Mixtures of alkyltin sulfides and alkyltin 2-acyloxyethlymecaptides as stabilizer compositons for polyvinyl chloride resin compositions
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
JPH07133391A (ja) * 1993-11-11 1995-05-23 Kyodo Yakuhin Kk 熱安定性に優れる含ハロゲン樹脂組成物
TWI299527B (en) * 2006-04-11 2008-08-01 Taiwan Tft Lcd Ass A fabrication method of thin film for active layer by metal chalcogenide precursor solution
WO2012118847A2 (en) * 2011-02-28 2012-09-07 Inpria Corportion Solution processible hardmarks for high resolusion lithography
US9310684B2 (en) * 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
KR102952227B1 (ko) * 2014-10-23 2026-04-13 인프리아 코포레이션 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
KR102508142B1 (ko) * 2015-10-13 2023-03-08 인프리아 코포레이션 유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝
CN108778458B (zh) * 2016-03-29 2021-06-08 东丽株式会社 层合聚芳硫醚耐热过滤器
WO2017211669A1 (en) * 2016-06-10 2017-12-14 Philipps-Universität Marburg Molecular white-light emitter
KR102610448B1 (ko) 2016-08-12 2023-12-07 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
KR102634520B1 (ko) * 2017-11-20 2024-02-06 인프리아 코포레이션 유기주석 클러스터, 유기주석 클러스터의 용액, 및 고해상도 패턴화에 대한 적용

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