JP2020133002A5 - - Google Patents
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- Publication number
- JP2020133002A5 JP2020133002A5 JP2020023278A JP2020023278A JP2020133002A5 JP 2020133002 A5 JP2020133002 A5 JP 2020133002A5 JP 2020023278 A JP2020023278 A JP 2020023278A JP 2020023278 A JP2020023278 A JP 2020023278A JP 2020133002 A5 JP2020133002 A5 JP 2020133002A5
- Authority
- JP
- Japan
- Prior art keywords
- lanthanum
- hafnium
- film
- hafnium oxide
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 35
- DBOSVWZVMLOAEU-UHFFFAOYSA-N [O-2].[Hf+4].[La+3] Chemical compound [O-2].[Hf+4].[La+3] DBOSVWZVMLOAEU-UHFFFAOYSA-N 0.000 claims description 23
- 239000002243 precursor Substances 0.000 claims description 18
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 13
- 229910052746 lanthanum Inorganic materials 0.000 claims description 11
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 10
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 10
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 10
- 125000004122 cyclic group Chemical group 0.000 claims description 8
- 229910052735 hafnium Inorganic materials 0.000 claims description 7
- 239000007800 oxidant agent Substances 0.000 claims description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 3
- JIGXARPLYFNBCG-UHFFFAOYSA-N C1(C=CC=C1)[Hf](N(C)C)(N(C)C)N(C)C Chemical compound C1(C=CC=C1)[Hf](N(C)C)(N(C)C)N(C)C JIGXARPLYFNBCG-UHFFFAOYSA-N 0.000 claims description 2
- DJXOAIAWZXGNDH-UHFFFAOYSA-N CC1(C=CC=C1)[Hf](COC)C1(C=CC=C1)C Chemical compound CC1(C=CC=C1)[Hf](COC)C1(C=CC=C1)C DJXOAIAWZXGNDH-UHFFFAOYSA-N 0.000 claims description 2
- -1 lanthanum cyclopentadienyl compound Chemical class 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 12
- 238000005137 deposition process Methods 0.000 claims 6
- 239000012808 vapor phase Substances 0.000 claims 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 2
- 238000002425 crystallisation Methods 0.000 claims 2
- 230000008025 crystallization Effects 0.000 claims 2
- 229910001882 dioxygen Inorganic materials 0.000 claims 2
- 150000002362 hafnium Chemical class 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- BDAGIHXWWSANSR-UHFFFAOYSA-N Formic acid Chemical compound OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- VBCSQFQVDXIOJL-UHFFFAOYSA-N diethylazanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VBCSQFQVDXIOJL-UHFFFAOYSA-N 0.000 claims 1
- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 claims 1
- NPEOKFBCHNGLJD-UHFFFAOYSA-N ethyl(methyl)azanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C NPEOKFBCHNGLJD-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical group Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 claims 1
- FEEFWFYISQGDKK-UHFFFAOYSA-J hafnium(4+);tetrabromide Chemical compound Br[Hf](Br)(Br)Br FEEFWFYISQGDKK-UHFFFAOYSA-J 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000012071 phase Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 239000003446 ligand Substances 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- MXVFWIHIMKGTFU-UHFFFAOYSA-N C1=CC=CC1[Hf] Chemical compound C1=CC=CC1[Hf] MXVFWIHIMKGTFU-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024135191A JP2024159774A (ja) | 2019-02-14 | 2024-08-14 | 反応チャンバーにおいて循環堆積プロセスにより基材上に酸化ハフニウムランタン膜を堆積させるための方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962805345P | 2019-02-14 | 2019-02-14 | |
| US62/805,345 | 2019-02-14 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024135191A Division JP2024159774A (ja) | 2019-02-14 | 2024-08-14 | 反応チャンバーにおいて循環堆積プロセスにより基材上に酸化ハフニウムランタン膜を堆積させるための方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020133002A JP2020133002A (ja) | 2020-08-31 |
| JP2020133002A5 true JP2020133002A5 (https=) | 2020-10-08 |
| JP7539774B2 JP7539774B2 (ja) | 2024-08-26 |
Family
ID=72040820
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020023278A Active JP7539774B2 (ja) | 2019-02-14 | 2020-02-14 | 反応チャンバーにおいて循環堆積プロセスにより基材上に酸化ハフニウムランタン膜を堆積させるための方法 |
| JP2024135191A Pending JP2024159774A (ja) | 2019-02-14 | 2024-08-14 | 反応チャンバーにおいて循環堆積プロセスにより基材上に酸化ハフニウムランタン膜を堆積させるための方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024135191A Pending JP2024159774A (ja) | 2019-02-14 | 2024-08-14 | 反応チャンバーにおいて循環堆積プロセスにより基材上に酸化ハフニウムランタン膜を堆積させるための方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11227763B2 (https=) |
| JP (2) | JP7539774B2 (https=) |
| KR (2) | KR102796184B1 (https=) |
| CN (1) | CN111564361B (https=) |
| TW (1) | TWI841680B (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI841680B (zh) * | 2019-02-14 | 2024-05-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 於反應腔室中藉由循環沉積製程於基板上沉積鉿鑭氧化物膜之方法 |
| DE102020119609A1 (de) * | 2020-01-31 | 2021-08-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Neue gatestrukturen zur einstellung der grenzspannung |
| US20220199406A1 (en) * | 2020-12-17 | 2022-06-23 | Applied Materials, Inc. | Vapor deposition of carbon-doped metal oxides for use as photoresists |
| US20220262625A1 (en) * | 2021-02-18 | 2022-08-18 | Applied Materials, Inc. | Chemical vapor condensation deposition of photoresist films |
| US20240194479A1 (en) * | 2021-04-22 | 2024-06-13 | Applied Materials, Inc. | Methods and applications of novel amorphous high-k metal-oxide dielectrics by super-cycle atomic layer deposition |
| DE112022003211T5 (de) * | 2021-09-17 | 2024-04-11 | Japan Advanced Institute Of Science And Technology | Ferroelektrische Schicht, Verfahren zu deren Herstellung und elektronisches Bauteil |
| TW202449209A (zh) * | 2023-01-06 | 2024-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於形成含有臨界電壓調變層的結構之方法及系統 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100583155B1 (ko) * | 2003-12-29 | 2006-05-23 | 주식회사 하이닉스반도체 | 하프늄, 란탄늄 및 산소가 혼합된 유전막을 구비한캐패시터 및 그 제조 방법 |
| JP4547345B2 (ja) * | 2006-03-13 | 2010-09-22 | 日本ピラー工業株式会社 | 超純水用の炭化珪素質ベアリング |
| US20070259111A1 (en) * | 2006-05-05 | 2007-11-08 | Singh Kaushal K | Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film |
| US8071452B2 (en) * | 2009-04-27 | 2011-12-06 | Asm America, Inc. | Atomic layer deposition of hafnium lanthanum oxides |
| US8802201B2 (en) * | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
| US8883270B2 (en) * | 2009-08-14 | 2014-11-11 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species |
| US9543188B2 (en) * | 2010-11-09 | 2017-01-10 | Institute Of Microelectonics, Chinese Academy Of Sciences | Isolation structure, method for manufacturing the same, and semiconductor device having the structure |
| US8884285B2 (en) * | 2011-07-13 | 2014-11-11 | Rutgers, The State University Of New Jersey | Multifunctional zinc oxide nano-structure-based circuit building blocks for re-configurable electronics and optoelectronics |
| JP2013165189A (ja) * | 2012-02-10 | 2013-08-22 | Univ Of Electro-Communications | ＮｉＯ系酸化物半導体発光素子および酸化物半導体単結晶層の成長方法 |
| US10214817B2 (en) * | 2013-10-16 | 2019-02-26 | The Board Of Trustees Of The University Of Illinois | Multi-metal films, alternating film multilayers, formation methods and deposition system |
| TWI740848B (zh) | 2015-10-16 | 2021-10-01 | 荷蘭商Ａｓｍ智慧財產控股公司 | 實施原子層沉積以得閘極介電質 |
| US10727065B2 (en) * | 2017-11-28 | 2020-07-28 | Taiwan Semiconductor Manufactruing Co., Ltd. | Semiconductor structure and manufacturing method thereof |
| TWI841680B (zh) * | 2019-02-14 | 2024-05-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 於反應腔室中藉由循環沉積製程於基板上沉積鉿鑭氧化物膜之方法 |
-
2020
- 2020-02-11 TW TW109104150A patent/TWI841680B/zh active
- 2020-02-12 KR KR1020200016711A patent/KR102796184B1/ko active Active
- 2020-02-14 JP JP2020023278A patent/JP7539774B2/ja active Active
- 2020-02-14 US US16/790,780 patent/US11227763B2/en active Active
- 2020-02-14 CN CN202010092013.1A patent/CN111564361B/zh active Active
-
2022
- 2022-01-17 US US17/577,073 patent/US11769664B2/en active Active
-
2024
- 2024-08-14 JP JP2024135191A patent/JP2024159774A/ja active Pending
-
2025
- 2025-04-10 KR KR1020250046767A patent/KR20250053037A/ko not_active Ceased
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