JP7539774B2 - 反応チャンバーにおいて循環堆積プロセスにより基材上に酸化ハフニウムランタン膜を堆積させるための方法 - Google Patents

反応チャンバーにおいて循環堆積プロセスにより基材上に酸化ハフニウムランタン膜を堆積させるための方法 Download PDF

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JP7539774B2
JP7539774B2 JP2020023278A JP2020023278A JP7539774B2 JP 7539774 B2 JP7539774 B2 JP 7539774B2 JP 2020023278 A JP2020023278 A JP 2020023278A JP 2020023278 A JP2020023278 A JP 2020023278A JP 7539774 B2 JP7539774 B2 JP 7539774B2
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hafnium
lanthanum
oxide film
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タチアナ・イヴァノヴァ
ペルットゥ・シッポラ
マイケル・ユージーン・ギヴンズ
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エーエスエム・アイピー・ホールディング・ベー・フェー
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/40—Oxides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
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    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
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    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
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    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H10P14/6544—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer
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    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2020023278A 2019-02-14 2020-02-14 反応チャンバーにおいて循環堆積プロセスにより基材上に酸化ハフニウムランタン膜を堆積させるための方法 Active JP7539774B2 (ja)

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TWI841680B (zh) * 2019-02-14 2024-05-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於反應腔室中藉由循環沉積製程於基板上沉積鉿鑭氧化物膜之方法
DE102020119609A1 (de) * 2020-01-31 2021-08-05 Taiwan Semiconductor Manufacturing Co., Ltd. Neue gatestrukturen zur einstellung der grenzspannung
US20220199406A1 (en) * 2020-12-17 2022-06-23 Applied Materials, Inc. Vapor deposition of carbon-doped metal oxides for use as photoresists
US20220262625A1 (en) * 2021-02-18 2022-08-18 Applied Materials, Inc. Chemical vapor condensation deposition of photoresist films
US20240194479A1 (en) * 2021-04-22 2024-06-13 Applied Materials, Inc. Methods and applications of novel amorphous high-k metal-oxide dielectrics by super-cycle atomic layer deposition
DE112022003211T5 (de) * 2021-09-17 2024-04-11 Japan Advanced Institute Of Science And Technology Ferroelektrische Schicht, Verfahren zu deren Herstellung und elektronisches Bauteil
TW202449209A (zh) * 2023-01-06 2024-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含有臨界電壓調變層的結構之方法及系統

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050139965A1 (en) 2003-12-29 2005-06-30 Lee Kee-Jeung Capacitor with hafnium, lanthanum and oxygen mixed dielectric and method for fabricating the same
JP2007247689A (ja) 2006-03-13 2007-09-27 Nippon Pillar Packing Co Ltd 超純水用の炭化珪素質摺動部材
US20100270626A1 (en) 2009-04-27 2010-10-28 Raisanen Petri I Atomic layer deposition of hafnium lanthanum oxides
JP2013165189A (ja) 2012-02-10 2013-08-22 Univ Of Electro-Communications ＮｉＯ系酸化物半導体発光素子および酸化物半導体単結晶層の成長方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070259111A1 (en) * 2006-05-05 2007-11-08 Singh Kaushal K Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
US8802201B2 (en) * 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8883270B2 (en) * 2009-08-14 2014-11-11 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species
US9543188B2 (en) * 2010-11-09 2017-01-10 Institute Of Microelectonics, Chinese Academy Of Sciences Isolation structure, method for manufacturing the same, and semiconductor device having the structure
US8884285B2 (en) * 2011-07-13 2014-11-11 Rutgers, The State University Of New Jersey Multifunctional zinc oxide nano-structure-based circuit building blocks for re-configurable electronics and optoelectronics
US10214817B2 (en) * 2013-10-16 2019-02-26 The Board Of Trustees Of The University Of Illinois Multi-metal films, alternating film multilayers, formation methods and deposition system
TWI740848B (zh) 2015-10-16 2021-10-01 荷蘭商Ａｓｍ智慧財產控股公司 實施原子層沉積以得閘極介電質
US10727065B2 (en) * 2017-11-28 2020-07-28 Taiwan Semiconductor Manufactruing Co., Ltd. Semiconductor structure and manufacturing method thereof
TWI841680B (zh) * 2019-02-14 2024-05-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於反應腔室中藉由循環沉積製程於基板上沉積鉿鑭氧化物膜之方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050139965A1 (en) 2003-12-29 2005-06-30 Lee Kee-Jeung Capacitor with hafnium, lanthanum and oxygen mixed dielectric and method for fabricating the same
JP2007247689A (ja) 2006-03-13 2007-09-27 Nippon Pillar Packing Co Ltd 超純水用の炭化珪素質摺動部材
US20100270626A1 (en) 2009-04-27 2010-10-28 Raisanen Petri I Atomic layer deposition of hafnium lanthanum oxides
JP2013165189A (ja) 2012-02-10 2013-08-22 Univ Of Electro-Communications ＮｉＯ系酸化物半導体発光素子および酸化物半導体単結晶層の成長方法

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US20200266055A1 (en) 2020-08-20
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CN111564361A (zh) 2020-08-21
KR102796184B1 (ko) 2025-04-16
KR20250053037A (ko) 2025-04-21
TW202044345A (zh) 2020-12-01
US11769664B2 (en) 2023-09-26
JP2024159774A (ja) 2024-11-08
US20220139702A1 (en) 2022-05-05
KR20200099986A (ko) 2020-08-25
JP2020133002A (ja) 2020-08-31

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