TWI856141B - 有機金屬型金屬硫族化物簇及微影之應用 - Google Patents

有機金屬型金屬硫族化物簇及微影之應用 Download PDF

Info

Publication number
TWI856141B
TWI856141B TW109124622A TW109124622A TWI856141B TW I856141 B TWI856141 B TW I856141B TW 109124622 A TW109124622 A TW 109124622A TW 109124622 A TW109124622 A TW 109124622A TW I856141 B TWI856141 B TW I856141B
Authority
TW
Taiwan
Prior art keywords
radiation
clusters
layer
rsn
organic solvent
Prior art date
Application number
TW109124622A
Other languages
English (en)
Chinese (zh)
Other versions
TW202110863A (zh
Inventor
布萊恩 Ｊ 卡丁紐
威廉 厄爾雷
杜魯門 萬巴赫
Original Assignee
美商英培雅股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商英培雅股份有限公司 filed Critical 美商英培雅股份有限公司
Publication of TW202110863A publication Critical patent/TW202110863A/zh
Application granted granted Critical
Publication of TWI856141B publication Critical patent/TWI856141B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/226—Compounds with one or more Sn-S linkages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Metallurgy (AREA)
TW109124622A 2019-07-22 2020-07-21 有機金屬型金屬硫族化物簇及微影之應用 TWI856141B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962876842P 2019-07-22 2019-07-22
US62/876,842 2019-07-22

Publications (2)

Publication Number Publication Date
TW202110863A TW202110863A (zh) 2021-03-16
TWI856141B true TWI856141B (zh) 2024-09-21

Family

ID=74189783

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109124622A TWI856141B (zh) 2019-07-22 2020-07-21 有機金屬型金屬硫族化物簇及微影之應用

Country Status (6)

Country Link
US (2) US20210026241A1 (https=)
EP (2) EP4647842A3 (https=)
JP (2) JP7715703B2 (https=)
KR (2) KR102841238B1 (https=)
TW (1) TWI856141B (https=)
WO (1) WO2021016229A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12416861B2 (en) 2019-04-12 2025-09-16 Inpria Corporation Organometallic photoresist developer compositions and processing methods
US11579531B2 (en) 2019-09-25 2023-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Organometallic cluster photoresists for EUV lithography
EP4115242A4 (en) * 2020-03-02 2024-03-13 Inpria Corporation PROCESSING ENVIRONMENT FOR THE FORMATION OF INORGANIC RESERVE PATTERNS
US20220365428A1 (en) * 2021-05-14 2022-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist materials and associated methods
US11906901B2 (en) 2021-06-07 2024-02-20 International Business Machines Corporation Alternating copolymer chain scission photoresists
CN114736236B (zh) * 2022-03-21 2023-09-29 中国科学院福建物质结构研究所 一种多核环状有机锡氧硫簇合物及其制备方法和应用
CN117148669B (zh) * 2022-05-24 2025-11-14 上海新阳半导体材料股份有限公司 一种euv光刻胶及其制备方法和应用
CN117417371A (zh) * 2022-07-11 2024-01-19 中国科学院福建物质结构研究所 一种p1型零维金属硫属簇合物以及制备方法和应用
KR102904140B1 (ko) * 2022-08-19 2025-12-23 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
CN117659420A (zh) 2022-08-29 2024-03-08 清华大学 一种Zn基有机配位纳米颗粒、光刻胶组合物及其制备方法与应用
US20240168373A1 (en) * 2022-10-11 2024-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and formation method thereof
JPWO2024157904A1 (https=) 2023-01-23 2024-08-02
CN120641830A (zh) 2023-02-28 2025-09-12 日产化学株式会社 具有碳-碳双键的含硅抗蚀剂下层膜形成用组合物
CN116375762B (zh) * 2023-04-06 2024-10-01 中国科学院福建物质结构研究所 一种镧锡异金属氧硫簇合物及其制备方法和应用
CN116478205B (zh) * 2023-04-25 2024-10-01 中国科学院福建物质结构研究所 一种亚硒酸根配位的有机锡氧簇合物及其制备方法和应用
JPWO2024242120A1 (https=) * 2023-05-24 2024-11-28
KR20260012803A (ko) 2023-05-24 2026-01-27 도오꾜오까고오교 가부시끼가이샤 패턴 형성 방법 및 금속 화합물 함유막용 처리액
JP2026000111A (ja) 2024-06-17 2026-01-05 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4255320A (en) * 1978-06-08 1981-03-10 Argus Chemical Corporation Mixtures of alkyltin sulfides and alkyltin 2-acyloxyethlymecaptides as stabilizer compositons for polyvinyl chloride resin compositions
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
US20070238247A1 (en) * 2006-04-11 2007-10-11 Chun-Yao Ou Method of fabricating active layer thin film by metal chalcogenide precursor solution
US20170102612A1 (en) * 2015-10-13 2017-04-13 Inpria Corporation Organotin oxide hydroxide patterning compositions, precursors, and patterning
WO2017211669A1 (en) * 2016-06-10 2017-12-14 Philipps-Universität Marburg Molecular white-light emitter
US20190099981A1 (en) * 2016-03-29 2019-04-04 Toray Industries, Inc. Laminated polyarylene sulfide heat-resistant filter
TW201922767A (zh) * 2017-11-20 2019-06-16 美商英培雅股份有限公司 有機錫簇，有機錫簇之溶液，及於高解析度圖案化之應用

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2873288A (en) 1956-09-18 1959-02-10 Metal & Thermit Corp Process for the preparation of vinyl tin compounds
JPH07133391A (ja) * 1993-11-11 1995-05-23 Kyodo Yakuhin Kk 熱安定性に優れる含ハロゲン樹脂組成物
US9281207B2 (en) * 2011-02-28 2016-03-08 Inpria Corporation Solution processible hardmasks for high resolution lithography
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
KR102696070B1 (ko) 2014-10-23 2024-08-16 인프리아 코포레이션 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
KR102791311B1 (ko) 2016-08-12 2025-04-04 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4255320A (en) * 1978-06-08 1981-03-10 Argus Chemical Corporation Mixtures of alkyltin sulfides and alkyltin 2-acyloxyethlymecaptides as stabilizer compositons for polyvinyl chloride resin compositions
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
US20070238247A1 (en) * 2006-04-11 2007-10-11 Chun-Yao Ou Method of fabricating active layer thin film by metal chalcogenide precursor solution
US20170102612A1 (en) * 2015-10-13 2017-04-13 Inpria Corporation Organotin oxide hydroxide patterning compositions, precursors, and patterning
US20190099981A1 (en) * 2016-03-29 2019-04-04 Toray Industries, Inc. Laminated polyarylene sulfide heat-resistant filter
WO2017211669A1 (en) * 2016-06-10 2017-12-14 Philipps-Universität Marburg Molecular white-light emitter
TW201922767A (zh) * 2017-11-20 2019-06-16 美商英培雅股份有限公司 有機錫簇，有機錫簇之溶液，及於高解析度圖案化之應用

Also Published As

Publication number Publication date
EP4004649C0 (en) 2025-10-08
WO2021016229A1 (en) 2021-01-28
EP4004649A1 (en) 2022-06-01
KR102841238B1 (ko) 2025-08-01
EP4004649B1 (en) 2025-10-08
JP2025094086A (ja) 2025-06-24
JP7837448B2 (ja) 2026-03-30
JP2022541818A (ja) 2022-09-27
EP4647842A2 (en) 2025-11-12
TW202448909A (zh) 2024-12-16
US20210026241A1 (en) 2021-01-28
US20240337925A1 (en) 2024-10-10
KR20250117739A (ko) 2025-08-05
JP7715703B2 (ja) 2025-07-30
EP4004649A4 (en) 2023-03-29
KR20220038372A (ko) 2022-03-28
TW202110863A (zh) 2021-03-16
EP4647842A3 (en) 2026-02-25

Similar Documents

Publication Publication Date Title
TWI856141B (zh) 有機金屬型金屬硫族化物簇及微影之應用
JP7760573B2 (ja) 有機金属溶液に基づいた高解像度パターニング組成物
US12522621B2 (en) Tin dodecamers and radiation patternable coatings with strong euv absorption
JP7820286B2 (ja) 有機金属溶液に基づいた高解像度パターニング組成物および対応する方法
US20250011346A1 (en) Organotin clusters, solutions of organotin clusters, and application to high resolution patterning
JP6805244B2 (ja) 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成