KR102841238B1 - 유기금속성 금속 칼코게나이드 클러스터 및 리소그래피에 대한 적용 - Google Patents

유기금속성 금속 칼코게나이드 클러스터 및 리소그래피에 대한 적용

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Publication number
KR102841238B1
KR102841238B1 KR1020227004408A KR20227004408A KR102841238B1 KR 102841238 B1 KR102841238 B1 KR 102841238B1 KR 1020227004408 A KR1020227004408 A KR 1020227004408A KR 20227004408 A KR20227004408 A KR 20227004408A KR 102841238 B1 KR102841238 B1 KR 102841238B1
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South Korea
Prior art keywords
radiation
layer
sensitive
coating
patterning
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KR1020227004408A
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English (en)
Korean (ko)
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KR20220038372A (ko
Inventor
브라이언 제이. 카르디네우
윌리엄 얼리
트루먼 웜백
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인프리아 코포레이션
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Priority to KR1020257025218A priority Critical patent/KR20250117739A/ko
Publication of KR20220038372A publication Critical patent/KR20220038372A/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/226—Compounds with one or more Sn-S linkages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Metallurgy (AREA)
KR1020227004408A 2019-07-22 2020-07-21 유기금속성 금속 칼코게나이드 클러스터 및 리소그래피에 대한 적용 Active KR102841238B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257025218A KR20250117739A (ko) 2019-07-22 2020-07-21 유기금속성 금속 칼코게나이드 클러스터 및 리소그래피에 대한 적용

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962876842P 2019-07-22 2019-07-22
US62/876,842 2019-07-22
PCT/US2020/042857 WO2021016229A1 (en) 2019-07-22 2020-07-21 Organometallic metal chalcogenide clusters and application to lithography

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257025218A Division KR20250117739A (ko) 2019-07-22 2020-07-21 유기금속성 금속 칼코게나이드 클러스터 및 리소그래피에 대한 적용

Publications (2)

Publication Number Publication Date
KR20220038372A KR20220038372A (ko) 2022-03-28
KR102841238B1 true KR102841238B1 (ko) 2025-08-01

Family

ID=74189783

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020227004408A Active KR102841238B1 (ko) 2019-07-22 2020-07-21 유기금속성 금속 칼코게나이드 클러스터 및 리소그래피에 대한 적용
KR1020257025218A Pending KR20250117739A (ko) 2019-07-22 2020-07-21 유기금속성 금속 칼코게나이드 클러스터 및 리소그래피에 대한 적용

Family Applications After (1)

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KR1020257025218A Pending KR20250117739A (ko) 2019-07-22 2020-07-21 유기금속성 금속 칼코게나이드 클러스터 및 리소그래피에 대한 적용

Country Status (6)

Country Link
US (2) US20210026241A1 (https=)
EP (2) EP4647842A3 (https=)
JP (2) JP7715703B2 (https=)
KR (2) KR102841238B1 (https=)
TW (1) TWI856141B (https=)
WO (1) WO2021016229A1 (https=)

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US12416861B2 (en) 2019-04-12 2025-09-16 Inpria Corporation Organometallic photoresist developer compositions and processing methods
US11579531B2 (en) 2019-09-25 2023-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Organometallic cluster photoresists for EUV lithography
EP4115242A4 (en) * 2020-03-02 2024-03-13 Inpria Corporation PROCESSING ENVIRONMENT FOR THE FORMATION OF INORGANIC RESERVE PATTERNS
US20220365428A1 (en) * 2021-05-14 2022-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist materials and associated methods
US11906901B2 (en) 2021-06-07 2024-02-20 International Business Machines Corporation Alternating copolymer chain scission photoresists
CN114736236B (zh) * 2022-03-21 2023-09-29 中国科学院福建物质结构研究所 一种多核环状有机锡氧硫簇合物及其制备方法和应用
CN117148669B (zh) * 2022-05-24 2025-11-14 上海新阳半导体材料股份有限公司 一种euv光刻胶及其制备方法和应用
CN117417371A (zh) * 2022-07-11 2024-01-19 中国科学院福建物质结构研究所 一种p1型零维金属硫属簇合物以及制备方法和应用
KR102904140B1 (ko) * 2022-08-19 2025-12-23 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
CN117659420A (zh) 2022-08-29 2024-03-08 清华大学 一种Zn基有机配位纳米颗粒、光刻胶组合物及其制备方法与应用
US20240168373A1 (en) * 2022-10-11 2024-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and formation method thereof
JPWO2024157904A1 (https=) 2023-01-23 2024-08-02
CN120641830A (zh) 2023-02-28 2025-09-12 日产化学株式会社 具有碳-碳双键的含硅抗蚀剂下层膜形成用组合物
CN116375762B (zh) * 2023-04-06 2024-10-01 中国科学院福建物质结构研究所 一种镧锡异金属氧硫簇合物及其制备方法和应用
CN116478205B (zh) * 2023-04-25 2024-10-01 中国科学院福建物质结构研究所 一种亚硒酸根配位的有机锡氧簇合物及其制备方法和应用
JPWO2024242120A1 (https=) * 2023-05-24 2024-11-28
KR20260012803A (ko) 2023-05-24 2026-01-27 도오꾜오까고오교 가부시끼가이샤 패턴 형성 방법 및 금속 화합물 함유막용 처리액
JP2026000111A (ja) 2024-06-17 2026-01-05 東京エレクトロン株式会社 基板処理方法及び基板処理装置

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KR102918243B1 (ko) * 2017-11-20 2026-01-26 인프리아 코포레이션 유기주석 클러스터, 유기주석 클러스터의 용액, 및 고해상도 패턴화에 대한 적용

Also Published As

Publication number Publication date
EP4004649C0 (en) 2025-10-08
WO2021016229A1 (en) 2021-01-28
EP4004649A1 (en) 2022-06-01
EP4004649B1 (en) 2025-10-08
JP2025094086A (ja) 2025-06-24
JP7837448B2 (ja) 2026-03-30
JP2022541818A (ja) 2022-09-27
EP4647842A2 (en) 2025-11-12
TWI856141B (zh) 2024-09-21
TW202448909A (zh) 2024-12-16
US20210026241A1 (en) 2021-01-28
US20240337925A1 (en) 2024-10-10
KR20250117739A (ko) 2025-08-05
JP7715703B2 (ja) 2025-07-30
EP4004649A4 (en) 2023-03-29
KR20220038372A (ko) 2022-03-28
TW202110863A (zh) 2021-03-16
EP4647842A3 (en) 2026-02-25

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