JP7715703B2 - 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用 - Google Patents

有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用

Info

Publication number
JP7715703B2
JP7715703B2 JP2022504087A JP2022504087A JP7715703B2 JP 7715703 B2 JP7715703 B2 JP 7715703B2 JP 2022504087 A JP2022504087 A JP 2022504087A JP 2022504087 A JP2022504087 A JP 2022504087A JP 7715703 B2 JP7715703 B2 JP 7715703B2
Authority
JP
Japan
Prior art keywords
radiation
layer
irradiated
sensitive
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022504087A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022541818A (ja
JP2022541818A5 (https=
JPWO2021016229A5 (https=
Inventor
ジェイ カーディノー，ブライアン
アーリー，ウィリアム
ワンバック，トゥルーマン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Inpria Corp
Original Assignee
Inpria Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inpria Corp filed Critical Inpria Corp
Publication of JP2022541818A publication Critical patent/JP2022541818A/ja
Publication of JP2022541818A5 publication Critical patent/JP2022541818A5/ja
Publication of JPWO2021016229A5 publication Critical patent/JPWO2021016229A5/ja
Priority to JP2025043467A priority Critical patent/JP7837448B2/ja
Application granted granted Critical
Publication of JP7715703B2 publication Critical patent/JP7715703B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/226—Compounds with one or more Sn-S linkages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Metallurgy (AREA)
JP2022504087A 2019-07-22 2020-07-21 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用 Active JP7715703B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025043467A JP7837448B2 (ja) 2019-07-22 2025-03-18 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962876842P 2019-07-22 2019-07-22
US62/876,842 2019-07-22
PCT/US2020/042857 WO2021016229A1 (en) 2019-07-22 2020-07-21 Organometallic metal chalcogenide clusters and application to lithography

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025043467A Division JP7837448B2 (ja) 2019-07-22 2025-03-18 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用

Publications (4)

Publication Number Publication Date
JP2022541818A JP2022541818A (ja) 2022-09-27
JP2022541818A5 JP2022541818A5 (https=) 2023-07-27
JPWO2021016229A5 JPWO2021016229A5 (https=) 2023-07-27
JP7715703B2 true JP7715703B2 (ja) 2025-07-30

Family

ID=74189783

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022504087A Active JP7715703B2 (ja) 2019-07-22 2020-07-21 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用
JP2025043467A Active JP7837448B2 (ja) 2019-07-22 2025-03-18 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025043467A Active JP7837448B2 (ja) 2019-07-22 2025-03-18 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用

Country Status (6)

Country Link
US (2) US20210026241A1 (https=)
EP (2) EP4647842A3 (https=)
JP (2) JP7715703B2 (https=)
KR (2) KR102841238B1 (https=)
TW (1) TWI856141B (https=)
WO (1) WO2021016229A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12416861B2 (en) 2019-04-12 2025-09-16 Inpria Corporation Organometallic photoresist developer compositions and processing methods
US11579531B2 (en) 2019-09-25 2023-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Organometallic cluster photoresists for EUV lithography
EP4115242A4 (en) * 2020-03-02 2024-03-13 Inpria Corporation PROCESSING ENVIRONMENT FOR THE FORMATION OF INORGANIC RESERVE PATTERNS
US20220365428A1 (en) * 2021-05-14 2022-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist materials and associated methods
US11906901B2 (en) 2021-06-07 2024-02-20 International Business Machines Corporation Alternating copolymer chain scission photoresists
CN114736236B (zh) * 2022-03-21 2023-09-29 中国科学院福建物质结构研究所 一种多核环状有机锡氧硫簇合物及其制备方法和应用
CN117148669B (zh) * 2022-05-24 2025-11-14 上海新阳半导体材料股份有限公司 一种euv光刻胶及其制备方法和应用
CN117417371A (zh) * 2022-07-11 2024-01-19 中国科学院福建物质结构研究所 一种p1型零维金属硫属簇合物以及制备方法和应用
KR102904140B1 (ko) * 2022-08-19 2025-12-23 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
CN117659420A (zh) 2022-08-29 2024-03-08 清华大学 一种Zn基有机配位纳米颗粒、光刻胶组合物及其制备方法与应用
US20240168373A1 (en) * 2022-10-11 2024-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and formation method thereof
JPWO2024157904A1 (https=) 2023-01-23 2024-08-02
CN120641830A (zh) 2023-02-28 2025-09-12 日产化学株式会社 具有碳-碳双键的含硅抗蚀剂下层膜形成用组合物
CN116375762B (zh) * 2023-04-06 2024-10-01 中国科学院福建物质结构研究所 一种镧锡异金属氧硫簇合物及其制备方法和应用
CN116478205B (zh) * 2023-04-25 2024-10-01 中国科学院福建物质结构研究所 一种亚硒酸根配位的有机锡氧簇合物及其制备方法和应用
JPWO2024242120A1 (https=) * 2023-05-24 2024-11-28
KR20260012803A (ko) 2023-05-24 2026-01-27 도오꾜오까고오교 가부시끼가이샤 패턴 형성 방법 및 금속 화합물 함유막용 처리액
JP2026000111A (ja) 2024-06-17 2026-01-05 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016530565A (ja) 2013-08-22 2016-09-29 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機金属溶液に基づいた高解像度パターニング組成物

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2873288A (en) 1956-09-18 1959-02-10 Metal & Thermit Corp Process for the preparation of vinyl tin compounds
US4255320A (en) * 1978-06-08 1981-03-10 Argus Chemical Corporation Mixtures of alkyltin sulfides and alkyltin 2-acyloxyethlymecaptides as stabilizer compositons for polyvinyl chloride resin compositions
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
JPH07133391A (ja) * 1993-11-11 1995-05-23 Kyodo Yakuhin Kk 熱安定性に優れる含ハロゲン樹脂組成物
TWI299527B (en) * 2006-04-11 2008-08-01 Taiwan Tft Lcd Ass A fabrication method of thin film for active layer by metal chalcogenide precursor solution
US9281207B2 (en) * 2011-02-28 2016-03-08 Inpria Corporation Solution processible hardmasks for high resolution lithography
KR102696070B1 (ko) 2014-10-23 2024-08-16 인프리아 코포레이션 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
EP4273625A3 (en) * 2015-10-13 2024-02-28 Inpria Corporation Organotin oxide hydroxide patterning compositions, precursors, and patterning
PL3437710T3 (pl) * 2016-03-29 2022-02-21 Toray Industries, Inc. Laminowany, odporny na ciepło filtr z siarczku poliarylenu
JP2019524647A (ja) * 2016-06-10 2019-09-05 フィリップス−ウニヴェルシテート・マールブルク 分子白色光エミッター
KR102791311B1 (ko) 2016-08-12 2025-04-04 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
KR102918243B1 (ko) * 2017-11-20 2026-01-26 인프리아 코포레이션 유기주석 클러스터, 유기주석 클러스터의 용액, 및 고해상도 패턴화에 대한 적용

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016530565A (ja) 2013-08-22 2016-09-29 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機金属溶液に基づいた高解像度パターニング組成物

Also Published As

Publication number Publication date
EP4004649C0 (en) 2025-10-08
WO2021016229A1 (en) 2021-01-28
EP4004649A1 (en) 2022-06-01
KR102841238B1 (ko) 2025-08-01
EP4004649B1 (en) 2025-10-08
JP2025094086A (ja) 2025-06-24
JP7837448B2 (ja) 2026-03-30
JP2022541818A (ja) 2022-09-27
EP4647842A2 (en) 2025-11-12
TWI856141B (zh) 2024-09-21
TW202448909A (zh) 2024-12-16
US20210026241A1 (en) 2021-01-28
US20240337925A1 (en) 2024-10-10
KR20250117739A (ko) 2025-08-05
EP4004649A4 (en) 2023-03-29
KR20220038372A (ko) 2022-03-28
TW202110863A (zh) 2021-03-16
EP4647842A3 (en) 2026-02-25

Similar Documents

Publication Publication Date Title
JP7715703B2 (ja) 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用
US12522621B2 (en) Tin dodecamers and radiation patternable coatings with strong euv absorption
JP7179816B2 (ja) 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成
WO2019099981A2 (en) Organotin clusters, solutions of organotin clusters, and application to high resolution patterning

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230714

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230714

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20240424

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20240513

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240521

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240819

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20241119

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250318

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250624

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250702

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250708

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250717

R150 Certificate of patent or registration of utility model

Ref document number: 7715703

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150