JPWO2021016229A5 - - Google Patents

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JPWO2021016229A5
JPWO2021016229A5 JP2022504087A JP2022504087A JPWO2021016229A5 JP WO2021016229 A5 JPWO2021016229 A5 JP WO2021016229A5 JP 2022504087 A JP2022504087 A JP 2022504087A JP 2022504087 A JP2022504087 A JP 2022504087A JP WO2021016229 A5 JPWO2021016229 A5 JP WO2021016229A5
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Japan
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radiation
layer
clusters
rsn
pattern
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JP2022504087A
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Japanese (ja)
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JP2022541818A (ja
JP2022541818A5 (https=
JP7715703B2 (ja
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Priority claimed from PCT/US2020/042857 external-priority patent/WO2021016229A1/en
Publication of JP2022541818A publication Critical patent/JP2022541818A/ja
Publication of JP2022541818A5 publication Critical patent/JP2022541818A5/ja
Publication of JPWO2021016229A5 publication Critical patent/JPWO2021016229A5/ja
Priority to JP2025043467A priority Critical patent/JP7837448B2/ja
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JP2022504087A 2019-07-22 2020-07-21 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用 Active JP7715703B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025043467A JP7837448B2 (ja) 2019-07-22 2025-03-18 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962876842P 2019-07-22 2019-07-22
US62/876,842 2019-07-22
PCT/US2020/042857 WO2021016229A1 (en) 2019-07-22 2020-07-21 Organometallic metal chalcogenide clusters and application to lithography

Related Child Applications (1)

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JP2025043467A Division JP7837448B2 (ja) 2019-07-22 2025-03-18 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用

Publications (4)

Publication Number Publication Date
JP2022541818A JP2022541818A (ja) 2022-09-27
JP2022541818A5 JP2022541818A5 (https=) 2023-07-27
JPWO2021016229A5 true JPWO2021016229A5 (https=) 2023-07-27
JP7715703B2 JP7715703B2 (ja) 2025-07-30

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ID=74189783

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JP2022504087A Active JP7715703B2 (ja) 2019-07-22 2020-07-21 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用
JP2025043467A Active JP7837448B2 (ja) 2019-07-22 2025-03-18 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用

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JP2025043467A Active JP7837448B2 (ja) 2019-07-22 2025-03-18 有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用

Country Status (6)

Country Link
US (2) US20210026241A1 (https=)
EP (2) EP4647842A3 (https=)
JP (2) JP7715703B2 (https=)
KR (2) KR102841238B1 (https=)
TW (1) TWI856141B (https=)
WO (1) WO2021016229A1 (https=)

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Publication number Priority date Publication date Assignee Title
US12416861B2 (en) 2019-04-12 2025-09-16 Inpria Corporation Organometallic photoresist developer compositions and processing methods
US11579531B2 (en) 2019-09-25 2023-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Organometallic cluster photoresists for EUV lithography
EP4115242A4 (en) * 2020-03-02 2024-03-13 Inpria Corporation PROCESSING ENVIRONMENT FOR THE FORMATION OF INORGANIC RESERVE PATTERNS
US20220365428A1 (en) * 2021-05-14 2022-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist materials and associated methods
US11906901B2 (en) 2021-06-07 2024-02-20 International Business Machines Corporation Alternating copolymer chain scission photoresists
CN114736236B (zh) * 2022-03-21 2023-09-29 中国科学院福建物质结构研究所 一种多核环状有机锡氧硫簇合物及其制备方法和应用
CN117148669B (zh) * 2022-05-24 2025-11-14 上海新阳半导体材料股份有限公司 一种euv光刻胶及其制备方法和应用
CN117417371A (zh) * 2022-07-11 2024-01-19 中国科学院福建物质结构研究所 一种p1型零维金属硫属簇合物以及制备方法和应用
KR102904140B1 (ko) * 2022-08-19 2025-12-23 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
CN117659420A (zh) 2022-08-29 2024-03-08 清华大学 一种Zn基有机配位纳米颗粒、光刻胶组合物及其制备方法与应用
US20240168373A1 (en) * 2022-10-11 2024-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and formation method thereof
JPWO2024157904A1 (https=) 2023-01-23 2024-08-02
CN120641830A (zh) 2023-02-28 2025-09-12 日产化学株式会社 具有碳-碳双键的含硅抗蚀剂下层膜形成用组合物
CN116375762B (zh) * 2023-04-06 2024-10-01 中国科学院福建物质结构研究所 一种镧锡异金属氧硫簇合物及其制备方法和应用
CN116478205B (zh) * 2023-04-25 2024-10-01 中国科学院福建物质结构研究所 一种亚硒酸根配位的有机锡氧簇合物及其制备方法和应用
JPWO2024242120A1 (https=) * 2023-05-24 2024-11-28
KR20260012803A (ko) 2023-05-24 2026-01-27 도오꾜오까고오교 가부시끼가이샤 패턴 형성 방법 및 금속 화합물 함유막용 처리액
JP2026000111A (ja) 2024-06-17 2026-01-05 東京エレクトロン株式会社 基板処理方法及び基板処理装置

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US2873288A (en) 1956-09-18 1959-02-10 Metal & Thermit Corp Process for the preparation of vinyl tin compounds
US4255320A (en) * 1978-06-08 1981-03-10 Argus Chemical Corporation Mixtures of alkyltin sulfides and alkyltin 2-acyloxyethlymecaptides as stabilizer compositons for polyvinyl chloride resin compositions
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
JPH07133391A (ja) * 1993-11-11 1995-05-23 Kyodo Yakuhin Kk 熱安定性に優れる含ハロゲン樹脂組成物
TWI299527B (en) * 2006-04-11 2008-08-01 Taiwan Tft Lcd Ass A fabrication method of thin film for active layer by metal chalcogenide precursor solution
US9281207B2 (en) * 2011-02-28 2016-03-08 Inpria Corporation Solution processible hardmasks for high resolution lithography
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
KR102696070B1 (ko) 2014-10-23 2024-08-16 인프리아 코포레이션 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
EP4273625A3 (en) * 2015-10-13 2024-02-28 Inpria Corporation Organotin oxide hydroxide patterning compositions, precursors, and patterning
PL3437710T3 (pl) * 2016-03-29 2022-02-21 Toray Industries, Inc. Laminowany, odporny na ciepło filtr z siarczku poliarylenu
JP2019524647A (ja) * 2016-06-10 2019-09-05 フィリップス−ウニヴェルシテート・マールブルク 分子白色光エミッター
KR102791311B1 (ko) 2016-08-12 2025-04-04 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
KR102918243B1 (ko) * 2017-11-20 2026-01-26 인프리아 코포레이션 유기주석 클러스터, 유기주석 클러스터의 용액, 및 고해상도 패턴화에 대한 적용

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