JP2004343108A5 - - Google Patents
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- Publication number
- JP2004343108A5 JP2004343108A5 JP2004137673A JP2004137673A JP2004343108A5 JP 2004343108 A5 JP2004343108 A5 JP 2004343108A5 JP 2004137673 A JP2004137673 A JP 2004137673A JP 2004137673 A JP2004137673 A JP 2004137673A JP 2004343108 A5 JP2004343108 A5 JP 2004343108A5
- Authority
- JP
- Japan
- Prior art keywords
- metal
- silicon
- barrier layer
- diffusion barrier
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims 88
- 239000002184 metal Substances 0.000 claims 88
- 238000000034 method Methods 0.000 claims 40
- 230000004888 barrier function Effects 0.000 claims 36
- 238000009792 diffusion process Methods 0.000 claims 36
- 229910052799 carbon Inorganic materials 0.000 claims 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 22
- 239000000203 mixture Substances 0.000 claims 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 20
- 229910052710 silicon Inorganic materials 0.000 claims 20
- 239000010703 silicon Substances 0.000 claims 19
- -1 nitrogen-containing compound Chemical class 0.000 claims 17
- 125000002524 organometallic group Chemical group 0.000 claims 16
- 239000002243 precursor Substances 0.000 claims 15
- 239000000463 material Substances 0.000 claims 14
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 12
- 229910052721 tungsten Inorganic materials 0.000 claims 12
- 239000010937 tungsten Substances 0.000 claims 12
- 150000001875 compounds Chemical class 0.000 claims 11
- 150000004767 nitrides Chemical class 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 10
- 125000000217 alkyl group Chemical group 0.000 claims 9
- 125000003118 aryl group Chemical group 0.000 claims 9
- 229910052757 nitrogen Inorganic materials 0.000 claims 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 7
- 238000005229 chemical vapour deposition Methods 0.000 claims 6
- 229910052802 copper Inorganic materials 0.000 claims 5
- 239000010949 copper Substances 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 5
- 239000002210 silicon-based material Substances 0.000 claims 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- 239000002318 adhesion promoter Substances 0.000 claims 4
- 125000003342 alkenyl group Chemical group 0.000 claims 4
- 125000000304 alkynyl group Chemical group 0.000 claims 4
- 125000004665 trialkylsilyl group Chemical group 0.000 claims 4
- 125000005106 triarylsilyl group Chemical group 0.000 claims 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 4
- 239000012691 Cu precursor Substances 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 3
- 229910001507 metal halide Inorganic materials 0.000 claims 3
- 150000005309 metal halides Chemical class 0.000 claims 3
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 claims 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 2
- 125000003545 alkoxy group Chemical group 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 229910052736 halogen Inorganic materials 0.000 claims 2
- 150000002367 halogens Chemical class 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 239000010948 rhodium Substances 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 229910003468 tantalcarbide Inorganic materials 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 125000005389 trialkylsiloxy group Chemical group 0.000 claims 2
- 229910052720 vanadium Inorganic materials 0.000 claims 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 2
- 229910052727 yttrium Inorganic materials 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 claims 1
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 claims 1
- 229910039444 MoC Inorganic materials 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 229910026551 ZrC Inorganic materials 0.000 claims 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 claims 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 claims 1
- 150000004703 alkoxides Chemical class 0.000 claims 1
- 125000004429 atom Chemical group 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 claims 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 claims 1
- SKKMWRVAJNPLFY-UHFFFAOYSA-N azanylidynevanadium Chemical compound [V]#N SKKMWRVAJNPLFY-UHFFFAOYSA-N 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 239000013043 chemical agent Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 239000003638 chemical reducing agent Substances 0.000 claims 1
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 238000004050 hot filament vapor deposition Methods 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 150000001247 metal acetylides Chemical class 0.000 claims 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000010944 silver (metal) Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000006467 substitution reaction Methods 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- NMJKIRUDPFBRHW-UHFFFAOYSA-N titanium Chemical compound [Ti].[Ti] NMJKIRUDPFBRHW-UHFFFAOYSA-N 0.000 claims 1
- 229910003470 tongbaite Inorganic materials 0.000 claims 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/428,447 US7311946B2 (en) | 2003-05-02 | 2003-05-02 | Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes |
| US10/820,864 US7524533B2 (en) | 2003-05-02 | 2004-04-09 | Diffusion barrier layers and processes for depositing metal films thereupon by CVD or ALD processes |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004343108A JP2004343108A (ja) | 2004-12-02 |
| JP2004343108A5 true JP2004343108A5 (https=) | 2005-06-09 |
| JP4261417B2 JP4261417B2 (ja) | 2009-04-30 |
Family
ID=32993991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004137673A Expired - Fee Related JP4261417B2 (ja) | 2003-05-02 | 2004-05-06 | 拡散バリア層表面に金属膜を形成する方法 |
Country Status (2)
| Country | Link |
|---|---|
| EP (1) | EP1473761A1 (https=) |
| JP (1) | JP4261417B2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101100288B1 (ko) * | 2005-12-02 | 2011-12-28 | 가부시키가이샤 알박 | Ｃｕ막의 형성방법 |
| KR101132700B1 (ko) * | 2008-01-04 | 2012-04-03 | 주식회사 하이닉스반도체 | 반도체 소자의 금속배선 및 그 형성방법 |
| US8242600B2 (en) * | 2009-05-19 | 2012-08-14 | International Business Machines Corporation | Redundant metal barrier structure for interconnect applications |
| AU2010310750B2 (en) * | 2009-10-23 | 2015-02-26 | President And Fellows Of Harvard College | Self-aligned barrier and capping layers for interconnects |
| RU2569870C1 (ru) * | 2014-07-15 | 2015-11-27 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Казанский национальный исследовательский технически университет им. А.Н. Туполева - КАИ" (КНИТУ-КАИ) | Способ нанесения защитного покрытия на пресс-форму для литья под давлением |
| US10229826B2 (en) * | 2016-10-21 | 2019-03-12 | Lam Research Corporation | Systems and methods for forming low resistivity metal contacts and interconnects by reducing and removing metallic oxide |
| CN119890178A (zh) * | 2025-01-22 | 2025-04-25 | 云南大学 | 集成电路铜互连中含第六副族氮化物的扩散阻挡层 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60258471A (ja) * | 1984-06-06 | 1985-12-20 | Fujitsu Ltd | タングステンアルミニウム合金膜の形成方法 |
| US5242860A (en) * | 1991-07-24 | 1993-09-07 | Applied Materials, Inc. | Method for the formation of tin barrier layer with preferential (111) crystallographic orientation |
| US6699530B2 (en) * | 1995-07-06 | 2004-03-02 | Applied Materials, Inc. | Method for constructing a film on a semiconductor wafer |
| KR100773280B1 (ko) * | 1999-02-17 | 2007-11-05 | 가부시키가이샤 알박 | 배리어막제조방법및배리어막 |
| US6337148B1 (en) * | 1999-05-25 | 2002-01-08 | Advanced Technology Materials, Inc. | Copper source reagent compositions, and method of making and using same for microelectronic device structures |
| US20020013487A1 (en) * | 2000-04-03 | 2002-01-31 | Norman John Anthony Thomas | Volatile precursors for deposition of metals and metal-containing films |
| US6423201B1 (en) * | 2000-08-23 | 2002-07-23 | Applied Materials, Inc. | Method of improving the adhesion of copper |
-
2004
- 2004-04-30 EP EP04010352A patent/EP1473761A1/en not_active Ceased
- 2004-05-06 JP JP2004137673A patent/JP4261417B2/ja not_active Expired - Fee Related
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