JP4261417B2 - 拡散バリア層表面に金属膜を形成する方法 - Google Patents

拡散バリア層表面に金属膜を形成する方法 Download PDF

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Publication number
JP4261417B2
JP4261417B2 JP2004137673A JP2004137673A JP4261417B2 JP 4261417 B2 JP4261417 B2 JP 4261417B2 JP 2004137673 A JP2004137673 A JP 2004137673A JP 2004137673 A JP2004137673 A JP 2004137673A JP 4261417 B2 JP4261417 B2 JP 4261417B2
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JP
Japan
Prior art keywords
metal
barrier layer
silicon
diffusion barrier
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004137673A
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English (en)
Japanese (ja)
Other versions
JP2004343108A (ja
JP2004343108A5 (https=
Inventor
ガーグ ディワカー
チェン ハンソン
アンソニー トーマス ノーマン ジョン
オルデホン パブロ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/428,447 external-priority patent/US7311946B2/en
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of JP2004343108A publication Critical patent/JP2004343108A/ja
Publication of JP2004343108A5 publication Critical patent/JP2004343108A5/ja
Application granted granted Critical
Publication of JP4261417B2 publication Critical patent/JP4261417B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/045—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H10W20/048—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by using plasmas or gaseous environments, e.g. by nitriding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2004137673A 2003-05-02 2004-05-06 拡散バリア層表面に金属膜を形成する方法 Expired - Fee Related JP4261417B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/428,447 US7311946B2 (en) 2003-05-02 2003-05-02 Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes
US10/820,864 US7524533B2 (en) 2003-05-02 2004-04-09 Diffusion barrier layers and processes for depositing metal films thereupon by CVD or ALD processes

Publications (3)

Publication Number Publication Date
JP2004343108A JP2004343108A (ja) 2004-12-02
JP2004343108A5 JP2004343108A5 (https=) 2005-06-09
JP4261417B2 true JP4261417B2 (ja) 2009-04-30

Family

ID=32993991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004137673A Expired - Fee Related JP4261417B2 (ja) 2003-05-02 2004-05-06 拡散バリア層表面に金属膜を形成する方法

Country Status (2)

Country Link
EP (1) EP1473761A1 (https=)
JP (1) JP4261417B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101100288B1 (ko) * 2005-12-02 2011-12-28 가부시키가이샤 알박 Ｃｕ막의 형성방법
KR101132700B1 (ko) * 2008-01-04 2012-04-03 주식회사 하이닉스반도체 반도체 소자의 금속배선 및 그 형성방법
US8242600B2 (en) * 2009-05-19 2012-08-14 International Business Machines Corporation Redundant metal barrier structure for interconnect applications
AU2010310750B2 (en) * 2009-10-23 2015-02-26 President And Fellows Of Harvard College Self-aligned barrier and capping layers for interconnects
RU2569870C1 (ru) * 2014-07-15 2015-11-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Казанский национальный исследовательский технически университет им. А.Н. Туполева - КАИ" (КНИТУ-КАИ) Способ нанесения защитного покрытия на пресс-форму для литья под давлением
US10229826B2 (en) * 2016-10-21 2019-03-12 Lam Research Corporation Systems and methods for forming low resistivity metal contacts and interconnects by reducing and removing metallic oxide
CN119890178A (zh) * 2025-01-22 2025-04-25 云南大学 集成电路铜互连中含第六副族氮化物的扩散阻挡层

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60258471A (ja) * 1984-06-06 1985-12-20 Fujitsu Ltd タングステンアルミニウム合金膜の形成方法
US5242860A (en) * 1991-07-24 1993-09-07 Applied Materials, Inc. Method for the formation of tin barrier layer with preferential (111) crystallographic orientation
US6699530B2 (en) * 1995-07-06 2004-03-02 Applied Materials, Inc. Method for constructing a film on a semiconductor wafer
KR100773280B1 (ko) * 1999-02-17 2007-11-05 가부시키가이샤 알박 배리어막제조방법및배리어막
US6337148B1 (en) * 1999-05-25 2002-01-08 Advanced Technology Materials, Inc. Copper source reagent compositions, and method of making and using same for microelectronic device structures
US20020013487A1 (en) * 2000-04-03 2002-01-31 Norman John Anthony Thomas Volatile precursors for deposition of metals and metal-containing films
US6423201B1 (en) * 2000-08-23 2002-07-23 Applied Materials, Inc. Method of improving the adhesion of copper

Also Published As

Publication number Publication date
JP2004343108A (ja) 2004-12-02
EP1473761A1 (en) 2004-11-03

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