JP2024519492A5 - - Google Patents
Info
- Publication number
- JP2024519492A5 JP2024519492A5 JP2023567953A JP2023567953A JP2024519492A5 JP 2024519492 A5 JP2024519492 A5 JP 2024519492A5 JP 2023567953 A JP2023567953 A JP 2023567953A JP 2023567953 A JP2023567953 A JP 2023567953A JP 2024519492 A5 JP2024519492 A5 JP 2024519492A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoresist
- pattern
- relief pattern
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163183130P | 2021-05-03 | 2021-05-03 | |
| US202163183129P | 2021-05-03 | 2021-05-03 | |
| US202163183128P | 2021-05-03 | 2021-05-03 | |
| US63/183,130 | 2021-05-03 | ||
| US63/183,128 | 2021-05-03 | ||
| US63/183,129 | 2021-05-03 | ||
| PCT/US2022/026697 WO2022235475A1 (en) | 2021-05-03 | 2022-04-28 | Wet-dry bilayer resist |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024519492A JP2024519492A (ja) | 2024-05-14 |
| JP2024519492A5 true JP2024519492A5 (enExample) | 2025-04-17 |
Family
ID=83807790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023567953A Pending JP2024519492A (ja) | 2021-05-03 | 2022-04-28 | ウェット-ドライ二層レジスト |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US12327726B2 (enExample) |
| JP (1) | JP2024519492A (enExample) |
| KR (1) | KR102972540B1 (enExample) |
| TW (1) | TW202307957A (enExample) |
| WO (1) | WO2022235475A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024519492A (ja) * | 2021-05-03 | 2024-05-14 | 東京エレクトロン株式会社 | ウェット-ドライ二層レジスト |
| US12538760B2 (en) * | 2021-11-22 | 2026-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device |
| US20250149335A1 (en) * | 2023-11-07 | 2025-05-08 | Tokyo Electron Limited | Method to pattern a semiconductor substrate using a multilayer photoresist film stack |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5626450A (en) * | 1979-08-13 | 1981-03-14 | Hitachi Ltd | Manufacture of semiconductor device |
| JPH01128522A (ja) * | 1987-11-13 | 1989-05-22 | Fujitsu Ltd | レジストパターンの形成方法 |
| JP2794118B2 (ja) * | 1989-05-16 | 1998-09-03 | 三菱電機株式会社 | 微細パターンの形成方法 |
| JPH0566568A (ja) * | 1991-09-06 | 1993-03-19 | Kawasaki Steel Corp | 多重コントラストレジストパターンの製造方法、及び多層レジスト |
| JPH0737789A (ja) * | 1993-07-22 | 1995-02-07 | Toray Ind Inc | 二層構造レジストを有する基材の製造方法 |
| US6410453B1 (en) * | 1999-09-02 | 2002-06-25 | Micron Technology, Inc. | Method of processing a substrate |
| TW439118B (en) * | 2000-02-10 | 2001-06-07 | Winbond Electronics Corp | Multilayer thin photoresist process |
| JP2003043697A (ja) * | 2001-07-31 | 2003-02-13 | Ricoh Co Ltd | 多層レジストパターン形成方法 |
| US7229745B2 (en) * | 2004-06-14 | 2007-06-12 | Bae Systems Information And Electronic Systems Integration Inc. | Lithographic semiconductor manufacturing using a multi-layered process |
| KR100584681B1 (ko) * | 2004-06-30 | 2006-05-30 | 재단법인서울대학교산학협력재단 | 다층감광막을 이용한 패턴의 선택적 형성 방법 |
| KR20060054666A (ko) * | 2004-11-15 | 2006-05-23 | 삼성전자주식회사 | 다층의 포토레지스트 패턴 구조를 갖는 반도체소자 및 그제조방법 |
| US7579137B2 (en) * | 2005-12-24 | 2009-08-25 | International Business Machines Corporation | Method for fabricating dual damascene structures |
| US20080199814A1 (en) * | 2006-12-06 | 2008-08-21 | Fujifilm Electronic Materials, U.S.A., Inc. | Device manufacturing process utilizing a double patterning process |
| US8110339B2 (en) * | 2007-09-06 | 2012-02-07 | Massachusetts Institute Of Technology | Multi-tone resist compositions |
| JP2010040849A (ja) * | 2008-08-06 | 2010-02-18 | Tokyo Ohka Kogyo Co Ltd | レジストパターン形成方法 |
| JP4671065B2 (ja) * | 2008-09-05 | 2011-04-13 | 信越化学工業株式会社 | ダブルパターン形成方法 |
| US8435723B2 (en) * | 2008-09-11 | 2013-05-07 | Nikon Corporation | Pattern forming method and device production method |
| US8283111B2 (en) * | 2008-09-17 | 2012-10-09 | Tokyo Electron Limited | Method for creating gray-scale features for dual tone development processes |
| US8197996B2 (en) | 2008-09-19 | 2012-06-12 | Tokyo Electron Limited | Dual tone development processes |
| US8129080B2 (en) | 2008-09-19 | 2012-03-06 | Tokyo Electron Limited | Variable resist protecting groups |
| US8492282B2 (en) * | 2008-11-24 | 2013-07-23 | Micron Technology, Inc. | Methods of forming a masking pattern for integrated circuits |
| JP5337180B2 (ja) * | 2010-04-08 | 2013-11-06 | 東京エレクトロン株式会社 | 塗布処理方法、プログラム、コンピュータ記憶媒体及び塗布処理装置 |
| US9274426B2 (en) * | 2014-04-29 | 2016-03-01 | Az Electronic Materials (Luxembourg) S.A.R.L. | Antireflective coating compositions and processes thereof |
| JP6378146B2 (ja) * | 2014-10-16 | 2018-08-22 | 信越化学工業株式会社 | 多層膜形成方法及びパターン形成方法 |
| TWI632437B (zh) * | 2014-11-07 | 2018-08-11 | 羅門哈斯電子材料有限公司 | 用於形成凸紋影像的方法 |
| JP6580142B2 (ja) * | 2014-12-22 | 2019-09-25 | ユーリタ アクチエンゲゼルシャフトEulitha Ag | カラー画像を印刷する方法 |
| US9996004B2 (en) * | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| US10366890B2 (en) * | 2016-05-23 | 2019-07-30 | Tokyo Electron Limited | Method for patterning a substrate using a layer with multiple materials |
| US11764062B2 (en) * | 2017-11-13 | 2023-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming semiconductor structure |
| US10636667B2 (en) * | 2017-11-21 | 2020-04-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for manufacturing semiconductor devices and structures thereof |
| US20200411317A1 (en) * | 2019-06-26 | 2020-12-31 | Intel Corporation | Integrated circuit package assemblies with high-aspect ratio metallization features |
| CN114585969B (zh) * | 2019-09-19 | 2025-02-07 | 东京毅力科创株式会社 | 形成窄沟槽的方法 |
| JP2024519492A (ja) * | 2021-05-03 | 2024-05-14 | 東京エレクトロン株式会社 | ウェット-ドライ二層レジスト |
-
2022
- 2022-04-28 JP JP2023567953A patent/JP2024519492A/ja active Pending
- 2022-04-28 KR KR1020237040702A patent/KR102972540B1/ko active Active
- 2022-04-28 WO PCT/US2022/026697 patent/WO2022235475A1/en not_active Ceased
- 2022-05-02 TW TW111116566A patent/TW202307957A/zh unknown
- 2022-05-03 US US17/735,707 patent/US12327726B2/en active Active
- 2022-05-03 US US17/735,726 patent/US12249508B2/en active Active
- 2022-05-03 US US17/735,732 patent/US12500085B2/en active Active
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