JP2024519492A - ウェット－ドライ二層レジスト - Google Patents

ウェット－ドライ二層レジスト Download PDF

Info

Publication number
JP2024519492A
JP2024519492A JP2023567953A JP2023567953A JP2024519492A JP 2024519492 A JP2024519492 A JP 2024519492A JP 2023567953 A JP2023567953 A JP 2023567953A JP 2023567953 A JP2023567953 A JP 2023567953A JP 2024519492 A JP2024519492 A JP 2024519492A
Authority
JP
Japan
Prior art keywords
layer
photoresist
pattern
dry
wet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023567953A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024519492A5 (enExample
Inventor
アントン デヴィリアーズ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron US Holdings Inc
Original Assignee
Tokyo Electron Ltd
Tokyo Electron US Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron US Holdings Inc filed Critical Tokyo Electron Ltd
Publication of JP2024519492A publication Critical patent/JP2024519492A/ja
Publication of JP2024519492A5 publication Critical patent/JP2024519492A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2023567953A 2021-05-03 2022-04-28 ウェット－ドライ二層レジスト Pending JP2024519492A (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US202163183130P 2021-05-03 2021-05-03
US202163183129P 2021-05-03 2021-05-03
US202163183128P 2021-05-03 2021-05-03
US63/183,130 2021-05-03
US63/183,128 2021-05-03
US63/183,129 2021-05-03
PCT/US2022/026697 WO2022235475A1 (en) 2021-05-03 2022-04-28 Wet-dry bilayer resist

Publications (2)

Publication Number Publication Date
JP2024519492A true JP2024519492A (ja) 2024-05-14
JP2024519492A5 JP2024519492A5 (enExample) 2025-04-17

Family

ID=83807790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023567953A Pending JP2024519492A (ja) 2021-05-03 2022-04-28 ウェット－ドライ二層レジスト

Country Status (5)

Country Link
US (3) US12327726B2 (enExample)
JP (1) JP2024519492A (enExample)
KR (1) KR102972540B1 (enExample)
TW (1) TW202307957A (enExample)
WO (1) WO2022235475A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024519492A (ja) * 2021-05-03 2024-05-14 東京エレクトロン株式会社 ウェット－ドライ二層レジスト
US12538760B2 (en) * 2021-11-22 2026-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device
US20250149335A1 (en) * 2023-11-07 2025-05-08 Tokyo Electron Limited Method to pattern a semiconductor substrate using a multilayer photoresist film stack

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5626450A (en) * 1979-08-13 1981-03-14 Hitachi Ltd Manufacture of semiconductor device
JPH01128522A (ja) * 1987-11-13 1989-05-22 Fujitsu Ltd レジストパターンの形成方法
JPH02302037A (ja) * 1989-05-16 1990-12-14 Mitsubishi Electric Corp 微細パターンの形成方法
JPH0566568A (ja) * 1991-09-06 1993-03-19 Kawasaki Steel Corp 多重コントラストレジストパターンの製造方法、及び多層レジスト
JPH0737789A (ja) * 1993-07-22 1995-02-07 Toray Ind Inc 二層構造レジストを有する基材の製造方法
JP2001223156A (ja) * 2000-02-10 2001-08-17 Huabang Electronic Co Ltd フォトリソグラフィによる多層フォトレジストプロセス
US20010036743A1 (en) * 1999-09-02 2001-11-01 Micron Technology, Inc. Mask for producing rectangular openings in a substrate
JP2003043697A (ja) * 2001-07-31 2003-02-13 Ricoh Co Ltd 多層レジストパターン形成方法
KR20060000986A (ko) * 2004-06-30 2006-01-06 재단법인서울대학교산학협력재단 다층감광막을 이용한 패턴의 선택적 형성 방법
JP2007173826A (ja) * 2005-12-24 2007-07-05 Internatl Business Mach Corp <Ibm> デュアル・ダマシン構造を製作する方法
JP2010040849A (ja) * 2008-08-06 2010-02-18 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法
JP2010060954A (ja) * 2008-09-05 2010-03-18 Shin-Etsu Chemical Co Ltd ダブルパターン形成方法
JP2010067979A (ja) * 2008-09-11 2010-03-25 Nikon Corp パターン形成方法及びデバイス製造方法
US20100130016A1 (en) * 2008-11-24 2010-05-27 Micron Technology, Inc. Methods of forming a masking pattern for integrated circuits
JP2016092423A (ja) * 2014-11-07 2016-05-23 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ レリーフ画像形成方法
JP2017116923A (ja) * 2015-11-20 2017-06-29 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 蒸着金属酸化物含有ハードマスクのｅｕｖフォトパターニング
US20200411317A1 (en) * 2019-06-26 2020-12-31 Intel Corporation Integrated circuit package assemblies with high-aspect ratio metallization features
WO2021055542A1 (en) * 2019-09-19 2021-03-25 Tokyo Electron Limited Method of forming a narrow trench

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7229745B2 (en) * 2004-06-14 2007-06-12 Bae Systems Information And Electronic Systems Integration Inc. Lithographic semiconductor manufacturing using a multi-layered process
KR20060054666A (ko) * 2004-11-15 2006-05-23 삼성전자주식회사 다층의 포토레지스트 패턴 구조를 갖는 반도체소자 및 그제조방법
US20080199814A1 (en) * 2006-12-06 2008-08-21 Fujifilm Electronic Materials, U.S.A., Inc. Device manufacturing process utilizing a double patterning process
US8110339B2 (en) * 2007-09-06 2012-02-07 Massachusetts Institute Of Technology Multi-tone resist compositions
US8283111B2 (en) * 2008-09-17 2012-10-09 Tokyo Electron Limited Method for creating gray-scale features for dual tone development processes
US8197996B2 (en) 2008-09-19 2012-06-12 Tokyo Electron Limited Dual tone development processes
US8129080B2 (en) 2008-09-19 2012-03-06 Tokyo Electron Limited Variable resist protecting groups
JP5337180B2 (ja) * 2010-04-08 2013-11-06 東京エレクトロン株式会社 塗布処理方法、プログラム、コンピュータ記憶媒体及び塗布処理装置
US9274426B2 (en) * 2014-04-29 2016-03-01 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective coating compositions and processes thereof
JP6378146B2 (ja) * 2014-10-16 2018-08-22 信越化学工業株式会社 多層膜形成方法及びパターン形成方法
JP6580142B2 (ja) * 2014-12-22 2019-09-25 ユーリタ アクチエンゲゼルシャフトＥｕｌｉｔｈａ Ａｇ カラー画像を印刷する方法
US10366890B2 (en) * 2016-05-23 2019-07-30 Tokyo Electron Limited Method for patterning a substrate using a layer with multiple materials
US11764062B2 (en) * 2017-11-13 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming semiconductor structure
US10636667B2 (en) * 2017-11-21 2020-04-28 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor devices and structures thereof
JP2024519492A (ja) * 2021-05-03 2024-05-14 東京エレクトロン株式会社 ウェット－ドライ二層レジスト

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5626450A (en) * 1979-08-13 1981-03-14 Hitachi Ltd Manufacture of semiconductor device
JPH01128522A (ja) * 1987-11-13 1989-05-22 Fujitsu Ltd レジストパターンの形成方法
JPH02302037A (ja) * 1989-05-16 1990-12-14 Mitsubishi Electric Corp 微細パターンの形成方法
JPH0566568A (ja) * 1991-09-06 1993-03-19 Kawasaki Steel Corp 多重コントラストレジストパターンの製造方法、及び多層レジスト
JPH0737789A (ja) * 1993-07-22 1995-02-07 Toray Ind Inc 二層構造レジストを有する基材の製造方法
US20010036743A1 (en) * 1999-09-02 2001-11-01 Micron Technology, Inc. Mask for producing rectangular openings in a substrate
JP2001223156A (ja) * 2000-02-10 2001-08-17 Huabang Electronic Co Ltd フォトリソグラフィによる多層フォトレジストプロセス
JP2003043697A (ja) * 2001-07-31 2003-02-13 Ricoh Co Ltd 多層レジストパターン形成方法
KR20060000986A (ko) * 2004-06-30 2006-01-06 재단법인서울대학교산학협력재단 다층감광막을 이용한 패턴의 선택적 형성 방법
JP2007173826A (ja) * 2005-12-24 2007-07-05 Internatl Business Mach Corp <Ibm> デュアル・ダマシン構造を製作する方法
JP2010040849A (ja) * 2008-08-06 2010-02-18 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法
JP2010060954A (ja) * 2008-09-05 2010-03-18 Shin-Etsu Chemical Co Ltd ダブルパターン形成方法
JP2010067979A (ja) * 2008-09-11 2010-03-25 Nikon Corp パターン形成方法及びデバイス製造方法
US20100130016A1 (en) * 2008-11-24 2010-05-27 Micron Technology, Inc. Methods of forming a masking pattern for integrated circuits
JP2016092423A (ja) * 2014-11-07 2016-05-23 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ レリーフ画像形成方法
JP2017116923A (ja) * 2015-11-20 2017-06-29 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 蒸着金属酸化物含有ハードマスクのｅｕｖフォトパターニング
US20200411317A1 (en) * 2019-06-26 2020-12-31 Intel Corporation Integrated circuit package assemblies with high-aspect ratio metallization features
WO2021055542A1 (en) * 2019-09-19 2021-03-25 Tokyo Electron Limited Method of forming a narrow trench

Also Published As

Publication number Publication date
US12327726B2 (en) 2025-06-10
WO2022235475A1 (en) 2022-11-10
KR20240003444A (ko) 2024-01-09
TW202307957A (zh) 2023-02-16
US20220350246A1 (en) 2022-11-03
US12249508B2 (en) 2025-03-11
US12500085B2 (en) 2025-12-16
US20220350247A1 (en) 2022-11-03
US20220351966A1 (en) 2022-11-03
KR102972540B1 (ko) 2026-06-02

Similar Documents

Publication Publication Date Title
JP6726826B2 (ja) ネガティブトーン現像剤相溶性フォトレジスト組成物及び使用方法
US5023203A (en) Method of patterning fine line width semiconductor topology using a spacer
US10020196B2 (en) Methods of forming etch masks for sub-resolution substrate patterning
EP2279517B1 (en) Methods of forming structures supported by semiconductor substrates
CN103258719B (zh) 使蚀刻底切最小化及提供清洁金属剥离的方法
US5413898A (en) Method of forming a pattern on a substrate having a step change in height
US12500085B2 (en) Wet-dry bilayer resist
US7862986B2 (en) Patterning process
JP2002110510A (ja) パターン形成方法
TW200939300A (en) Double patterning strategy for contact hole and trench in photolithography
US20140299971A1 (en) Methods of forming a reversed pattern in a substrate, and related semiconductor device structures
JP2009534870A (ja) パターン内の最小ピッチを短縮させる方法
JP2001351849A (ja) 半導体装置の製造方法、並びに写真製版用マスクおよびその製造方法
US7914975B2 (en) Multiple exposure lithography method incorporating intermediate layer patterning
JP2024519492A5 (enExample)
CN117546271A (zh) 经由使用双层系统的增强无冻结反间隔物形成去除材料覆盖层的方法
CN117461111A (zh) 干湿双层抗蚀剂
JP3952248B2 (ja) 露光方法およびそれに用いられるマスクの製造方法
US11646224B2 (en) Method of fabricating semiconductor structure
JP2000021978A (ja) フォトマスクおよびパターン形成方法
CN108231550B (zh) 半导体装置的制作方法
US20020102469A1 (en) Method for aligning a contact or a line to adjacent phase-shifter on a mask
US20260093170A1 (en) Method for patterning substrate using metal oxide resist
US6514874B1 (en) Method of using controlled resist footing on silicon nitride substrate for smaller spacing of integrated circuit device features
KR20050066844A (ko) 반도체 소자의 트렌치 제조 방법 및 그 마스크 패턴 형성방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250409

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250409

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20260109

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20260120

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260316

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20260526