JP2024500630A5 - - Google Patents

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Publication number
JP2024500630A5
JP2024500630A5 JP2023530747A JP2023530747A JP2024500630A5 JP 2024500630 A5 JP2024500630 A5 JP 2024500630A5 JP 2023530747 A JP2023530747 A JP 2023530747A JP 2023530747 A JP2023530747 A JP 2023530747A JP 2024500630 A5 JP2024500630 A5 JP 2024500630A5
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precursor according
alkyl group
precursor
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JP7690582B2 (ja
JP2024500630A (ja
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Priority claimed from PCT/EP2021/082084 external-priority patent/WO2022106508A1/en
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JP2023530747A 2020-11-20 2021-11-18 ランタニド及びランタニド様遷移金属錯体 Active JP7690582B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063116487P 2020-11-20 2020-11-20
US63/116,487 2020-11-20
PCT/EP2021/082084 WO2022106508A1 (en) 2020-11-20 2021-11-18 Lanthanide and lanthanide-like transition metal complexes

Publications (3)

Publication Number Publication Date
JP2024500630A JP2024500630A (ja) 2024-01-10
JP2024500630A5 true JP2024500630A5 (https=) 2024-07-16
JP7690582B2 JP7690582B2 (ja) 2025-06-10

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JP2023530747A Active JP7690582B2 (ja) 2020-11-20 2021-11-18 ランタニド及びランタニド様遷移金属錯体

Country Status (6)

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US (1) US12428439B2 (https=)
JP (1) JP7690582B2 (https=)
KR (1) KR20230110312A (https=)
CN (1) CN116583621B (https=)
TW (1) TWI894397B (https=)
WO (1) WO2022106508A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116583621B (zh) 2020-11-20 2025-07-25 默克专利股份有限公司 镧系及类镧系过渡金属的络合物
JP2025527797A (ja) * 2022-08-31 2025-08-22 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 気相薄膜堆積プロセスのための前駆体としての多置換シクロペンタジエニル希土類錯体
KR102952598B1 (ko) * 2022-11-30 2026-04-13 에스케이트리켐 주식회사 이트륨 또는 스칸듐 함유 박막 형성용 전구체, 이를 이용한 이트륨 또는 스칸듐 함유 박막 형성 방법 및 상기 이트륨 또는 스칸듐 함유 박막을 포함하는 반도체 소자.
CN116284065A (zh) * 2022-12-29 2023-06-23 江苏爱姆欧光电材料有限公司 一种含柔性基团茂稀土镧/钆配合物及其制备方法
IL326480A (en) 2023-09-04 2026-04-01 Adeka Corp Raw material for forming a thin layer, a thin layer, a method for producing a thin layer, and a lanthanum compound

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6969539B2 (en) 2000-09-28 2005-11-29 President And Fellows Of Harvard College Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
US7816737B2 (en) 2006-03-31 2010-10-19 Tokyo Electron Limited Semiconductor device with gate dielectric containing mixed rare earth elements
KR101802124B1 (ko) 2008-06-05 2017-11-27 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 란탄족 함유 전구체의 제조 및 란탄족 함유 필름의 증착 방법
CN102119238B (zh) 2008-07-24 2014-05-28 乔治洛德方法研究和开发液化空气有限公司 沉积含过渡金属的膜的方法
TWI554636B (zh) 2012-04-25 2016-10-21 應用材料股份有限公司 由金屬脒鹽前驅物製造介電膜的方法
US10913754B2 (en) 2015-07-07 2021-02-09 Samsung Electronics Co., Ltd. Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound
KR102424961B1 (ko) 2015-07-07 2022-07-25 삼성전자주식회사 란타넘 화합물 및 그 제조 방법과 란타넘 전구체 조성물과 이를 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법
US20160315168A1 (en) * 2016-06-30 2016-10-27 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for forming gate insulators for tft structures
US10487398B2 (en) * 2016-12-04 2019-11-26 Applied Materials, Inc. Synthesis of metal nitride thin films materials using hydrazine derivatives
US20180187303A1 (en) 2016-12-30 2018-07-05 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Lanthanide precursors and deposition of lanthanide-containing films using the same
US10760159B2 (en) * 2017-07-13 2020-09-01 Applied Materials, Inc. Methods and apparatus for depositing yttrium-containing films
US20190062916A1 (en) 2017-08-30 2019-02-28 Applied Materials, Inc. Lanthanide, Yttrium and Scandium precursors for ALD, CVD and Thin Film Doping and Methods of Use
KR20220079618A (ko) 2019-10-08 2022-06-13 어플라이드 머티어리얼스, 인코포레이티드 항공우주 컴포넌트들 상에 코킹 방지 보호 코팅들을 증착하는 방법들
JP7653431B2 (ja) 2019-12-27 2025-03-28 ユーピー ケミカル カンパニー リミテッド イットリウム/ランタン族金属前駆体化合物、それを含む膜形成用組成物、及びそれを利用したイットリウム/ランタン族金属含有膜の形成方法
CN116583621B (zh) 2020-11-20 2025-07-25 默克专利股份有限公司 镧系及类镧系过渡金属的络合物

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