CN116583621B - 镧系及类镧系过渡金属的络合物 - Google Patents

镧系及类镧系过渡金属的络合物

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Publication number
CN116583621B
CN116583621B CN202180078023.2A CN202180078023A CN116583621B CN 116583621 B CN116583621 B CN 116583621B CN 202180078023 A CN202180078023 A CN 202180078023A CN 116583621 B CN116583621 B CN 116583621B
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China
Prior art keywords
iii
vii
precursor
ligand
alkyl
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
CN202180078023.2A
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English (en)
Chinese (zh)
Other versions
CN116583621A (zh
Inventor
C·维特泽尔
H·黑尔
M·克龙皮克
L·利曹
D·伯格
房铭
S·V·伊瓦诺夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wortham Materials Usa LLC
Merck Patent GmbH
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Wortham Materials Usa LLC
Merck Patent GmbH
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Publication of CN116583621A publication Critical patent/CN116583621A/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
CN202180078023.2A 2020-11-20 2021-11-18 镧系及类镧系过渡金属的络合物 Active CN116583621B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063116487P 2020-11-20 2020-11-20
US63/116,487 2020-11-20
PCT/EP2021/082084 WO2022106508A1 (en) 2020-11-20 2021-11-18 Lanthanide and lanthanide-like transition metal complexes

Publications (2)

Publication Number Publication Date
CN116583621A CN116583621A (zh) 2023-08-11
CN116583621B true CN116583621B (zh) 2025-07-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180078023.2A Active CN116583621B (zh) 2020-11-20 2021-11-18 镧系及类镧系过渡金属的络合物

Country Status (6)

Country Link
US (1) US12428439B2 (https=)
JP (1) JP7690582B2 (https=)
KR (1) KR20230110312A (https=)
CN (1) CN116583621B (https=)
TW (1) TWI894397B (https=)
WO (1) WO2022106508A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116583621B (zh) 2020-11-20 2025-07-25 默克专利股份有限公司 镧系及类镧系过渡金属的络合物
JP2025527797A (ja) * 2022-08-31 2025-08-22 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 気相薄膜堆積プロセスのための前駆体としての多置換シクロペンタジエニル希土類錯体
KR102952598B1 (ko) * 2022-11-30 2026-04-13 에스케이트리켐 주식회사 이트륨 또는 스칸듐 함유 박막 형성용 전구체, 이를 이용한 이트륨 또는 스칸듐 함유 박막 형성 방법 및 상기 이트륨 또는 스칸듐 함유 박막을 포함하는 반도체 소자.
CN116284065A (zh) * 2022-12-29 2023-06-23 江苏爱姆欧光电材料有限公司 一种含柔性基团茂稀土镧/钆配合物及其制备方法
IL326480A (en) 2023-09-04 2026-04-01 Adeka Corp Raw material for forming a thin layer, a thin layer, a method for producing a thin layer, and a lanthanum compound

Citations (2)

* Cited by examiner, † Cited by third party
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CN102057077A (zh) * 2008-06-05 2011-05-11 乔治洛德方法研究和开发液化空气有限公司 含镧系元素的前体的制备和含镧系元素的薄膜的沉积
CN106336422A (zh) * 2015-07-07 2017-01-18 三星电子株式会社 镧化合物、合成镧化合物的方法、镧前体组合物、形成薄膜的方法和集成电路器件的制法

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US6969539B2 (en) 2000-09-28 2005-11-29 President And Fellows Of Harvard College Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
US7816737B2 (en) 2006-03-31 2010-10-19 Tokyo Electron Limited Semiconductor device with gate dielectric containing mixed rare earth elements
CN102119238B (zh) 2008-07-24 2014-05-28 乔治洛德方法研究和开发液化空气有限公司 沉积含过渡金属的膜的方法
TWI554636B (zh) 2012-04-25 2016-10-21 應用材料股份有限公司 由金屬脒鹽前驅物製造介電膜的方法
US10913754B2 (en) 2015-07-07 2021-02-09 Samsung Electronics Co., Ltd. Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound
US20160315168A1 (en) * 2016-06-30 2016-10-27 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for forming gate insulators for tft structures
US10487398B2 (en) * 2016-12-04 2019-11-26 Applied Materials, Inc. Synthesis of metal nitride thin films materials using hydrazine derivatives
US20180187303A1 (en) 2016-12-30 2018-07-05 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Lanthanide precursors and deposition of lanthanide-containing films using the same
US10760159B2 (en) * 2017-07-13 2020-09-01 Applied Materials, Inc. Methods and apparatus for depositing yttrium-containing films
US20190062916A1 (en) 2017-08-30 2019-02-28 Applied Materials, Inc. Lanthanide, Yttrium and Scandium precursors for ALD, CVD and Thin Film Doping and Methods of Use
KR20220079618A (ko) 2019-10-08 2022-06-13 어플라이드 머티어리얼스, 인코포레이티드 항공우주 컴포넌트들 상에 코킹 방지 보호 코팅들을 증착하는 방법들
JP7653431B2 (ja) 2019-12-27 2025-03-28 ユーピー ケミカル カンパニー リミテッド イットリウム／ランタン族金属前駆体化合物、それを含む膜形成用組成物、及びそれを利用したイットリウム／ランタン族金属含有膜の形成方法
CN116583621B (zh) 2020-11-20 2025-07-25 默克专利股份有限公司 镧系及类镧系过渡金属的络合物

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CN102057077A (zh) * 2008-06-05 2011-05-11 乔治洛德方法研究和开发液化空气有限公司 含镧系元素的前体的制备和含镧系元素的薄膜的沉积
CN106336422A (zh) * 2015-07-07 2017-01-18 三星电子株式会社 镧化合物、合成镧化合物的方法、镧前体组合物、形成薄膜的方法和集成电路器件的制法

Also Published As

Publication number Publication date
WO2022106508A1 (en) 2022-05-27
JP7690582B2 (ja) 2025-06-10
TWI894397B (zh) 2025-08-21
TW202229302A (zh) 2022-08-01
JP2024500630A (ja) 2024-01-10
CN116583621A (zh) 2023-08-11
KR20230110312A (ko) 2023-07-21
US12428439B2 (en) 2025-09-30
US20240400598A1 (en) 2024-12-05

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