TWI894397B - 鑭系及類鑭系過渡金屬之錯合物 - Google Patents

鑭系及類鑭系過渡金屬之錯合物

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Publication number
TWI894397B
TWI894397B TW110142858A TW110142858A TWI894397B TW I894397 B TWI894397 B TW I894397B TW 110142858 A TW110142858 A TW 110142858A TW 110142858 A TW110142858 A TW 110142858A TW I894397 B TWI894397 B TW I894397B
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TW
Taiwan
Prior art keywords
iii
vii
alkyl
ligand
precursor
Prior art date
Application number
TW110142858A
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English (en)
Chinese (zh)
Other versions
TW202229302A (zh
Inventor
克里斯托 韋特茲爾
霍格爾 海爾
麥可 克羅皮克
拉斯 萊姿歐
大衛 布魯居
房銘
謝爾蓋 Ｖ 伊萬諾夫
Original Assignee
德商馬克專利公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 德商馬克專利公司 filed Critical 德商馬克專利公司
Publication of TW202229302A publication Critical patent/TW202229302A/zh
Application granted granted Critical
Publication of TWI894397B publication Critical patent/TWI894397B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
TW110142858A 2020-11-20 2021-11-18 鑭系及類鑭系過渡金屬之錯合物 TWI894397B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063116487P 2020-11-20 2020-11-20
US63/116,487 2020-11-20

Publications (2)

Publication Number Publication Date
TW202229302A TW202229302A (zh) 2022-08-01
TWI894397B true TWI894397B (zh) 2025-08-21

Family

ID=78819507

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110142858A TWI894397B (zh) 2020-11-20 2021-11-18 鑭系及類鑭系過渡金屬之錯合物

Country Status (6)

Country Link
US (1) US12428439B2 (https=)
JP (1) JP7690582B2 (https=)
KR (1) KR20230110312A (https=)
CN (1) CN116583621B (https=)
TW (1) TWI894397B (https=)
WO (1) WO2022106508A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116583621B (zh) 2020-11-20 2025-07-25 默克专利股份有限公司 镧系及类镧系过渡金属的络合物
JP2025527797A (ja) * 2022-08-31 2025-08-22 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 気相薄膜堆積プロセスのための前駆体としての多置換シクロペンタジエニル希土類錯体
KR102952598B1 (ko) * 2022-11-30 2026-04-13 에스케이트리켐 주식회사 이트륨 또는 스칸듐 함유 박막 형성용 전구체, 이를 이용한 이트륨 또는 스칸듐 함유 박막 형성 방법 및 상기 이트륨 또는 스칸듐 함유 박막을 포함하는 반도체 소자.
CN116284065A (zh) * 2022-12-29 2023-06-23 江苏爱姆欧光电材料有限公司 一种含柔性基团茂稀土镧/钆配合物及其制备方法
IL326480A (en) 2023-09-04 2026-04-01 Adeka Corp Raw material for forming a thin layer, a thin layer, a method for producing a thin layer, and a lanthanum compound

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201346056A (zh) * 2012-04-25 2013-11-16 應用材料股份有限公司 由金屬脒鹽前驅物製造介電膜的方法
US20160315168A1 (en) * 2016-06-30 2016-10-27 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for forming gate insulators for tft structures
US20170008914A1 (en) * 2015-07-07 2017-01-12 Gyu-hee Park Lanthanum compound, method of synthesizing lanthanum compound, lanthanum precursor composition, method of forming thin film, and method of manufacturing integrated circuit device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6969539B2 (en) 2000-09-28 2005-11-29 President And Fellows Of Harvard College Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
US7816737B2 (en) 2006-03-31 2010-10-19 Tokyo Electron Limited Semiconductor device with gate dielectric containing mixed rare earth elements
KR101802124B1 (ko) 2008-06-05 2017-11-27 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 란탄족 함유 전구체의 제조 및 란탄족 함유 필름의 증착 방법
CN102119238B (zh) 2008-07-24 2014-05-28 乔治洛德方法研究和开发液化空气有限公司 沉积含过渡金属的膜的方法
US10913754B2 (en) 2015-07-07 2021-02-09 Samsung Electronics Co., Ltd. Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound
US10487398B2 (en) * 2016-12-04 2019-11-26 Applied Materials, Inc. Synthesis of metal nitride thin films materials using hydrazine derivatives
US20180187303A1 (en) 2016-12-30 2018-07-05 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Lanthanide precursors and deposition of lanthanide-containing films using the same
US10760159B2 (en) * 2017-07-13 2020-09-01 Applied Materials, Inc. Methods and apparatus for depositing yttrium-containing films
US20190062916A1 (en) 2017-08-30 2019-02-28 Applied Materials, Inc. Lanthanide, Yttrium and Scandium precursors for ALD, CVD and Thin Film Doping and Methods of Use
KR20220079618A (ko) 2019-10-08 2022-06-13 어플라이드 머티어리얼스, 인코포레이티드 항공우주 컴포넌트들 상에 코킹 방지 보호 코팅들을 증착하는 방법들
JP7653431B2 (ja) 2019-12-27 2025-03-28 ユーピー ケミカル カンパニー リミテッド イットリウム／ランタン族金属前駆体化合物、それを含む膜形成用組成物、及びそれを利用したイットリウム／ランタン族金属含有膜の形成方法
CN116583621B (zh) 2020-11-20 2025-07-25 默克专利股份有限公司 镧系及类镧系过渡金属的络合物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201346056A (zh) * 2012-04-25 2013-11-16 應用材料股份有限公司 由金屬脒鹽前驅物製造介電膜的方法
US20170008914A1 (en) * 2015-07-07 2017-01-12 Gyu-hee Park Lanthanum compound, method of synthesizing lanthanum compound, lanthanum precursor composition, method of forming thin film, and method of manufacturing integrated circuit device
US20160315168A1 (en) * 2016-06-30 2016-10-27 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for forming gate insulators for tft structures

Also Published As

Publication number Publication date
WO2022106508A1 (en) 2022-05-27
JP7690582B2 (ja) 2025-06-10
CN116583621B (zh) 2025-07-25
TW202229302A (zh) 2022-08-01
JP2024500630A (ja) 2024-01-10
CN116583621A (zh) 2023-08-11
KR20230110312A (ko) 2023-07-21
US12428439B2 (en) 2025-09-30
US20240400598A1 (en) 2024-12-05

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