JP7690582B2 - ランタニド及びランタニド様遷移金属錯体 - Google Patents

ランタニド及びランタニド様遷移金属錯体 Download PDF

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JP7690582B2
JP7690582B2 JP2023530747A JP2023530747A JP7690582B2 JP 7690582 B2 JP7690582 B2 JP 7690582B2 JP 2023530747 A JP2023530747 A JP 2023530747A JP 2023530747 A JP2023530747 A JP 2023530747A JP 7690582 B2 JP7690582 B2 JP 7690582B2
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JP2024500630A5 (https=
JP2024500630A (ja
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ヴェッツェル・クリストフ
ハイル・ホルガー
クロムピエツ・ミハウ
リーツァウ・ラルス
ブルーゲ・ダーフィト
ファン・ミン
イワノフ・セルゲイ・ヴェー
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Merck Patent GmbH
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Merck Patent GmbH
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
JP2023530747A 2020-11-20 2021-11-18 ランタニド及びランタニド様遷移金属錯体 Active JP7690582B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063116487P 2020-11-20 2020-11-20
US63/116,487 2020-11-20
PCT/EP2021/082084 WO2022106508A1 (en) 2020-11-20 2021-11-18 Lanthanide and lanthanide-like transition metal complexes

Publications (3)

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JP2024500630A JP2024500630A (ja) 2024-01-10
JP2024500630A5 JP2024500630A5 (https=) 2024-07-16
JP7690582B2 true JP7690582B2 (ja) 2025-06-10

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JP2023530747A Active JP7690582B2 (ja) 2020-11-20 2021-11-18 ランタニド及びランタニド様遷移金属錯体

Country Status (6)

Country Link
US (1) US12428439B2 (https=)
JP (1) JP7690582B2 (https=)
KR (1) KR20230110312A (https=)
CN (1) CN116583621B (https=)
TW (1) TWI894397B (https=)
WO (1) WO2022106508A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116583621B (zh) 2020-11-20 2025-07-25 默克专利股份有限公司 镧系及类镧系过渡金属的络合物
JP2025527797A (ja) * 2022-08-31 2025-08-22 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 気相薄膜堆積プロセスのための前駆体としての多置換シクロペンタジエニル希土類錯体
KR102952598B1 (ko) * 2022-11-30 2026-04-13 에스케이트리켐 주식회사 이트륨 또는 스칸듐 함유 박막 형성용 전구체, 이를 이용한 이트륨 또는 스칸듐 함유 박막 형성 방법 및 상기 이트륨 또는 스칸듐 함유 박막을 포함하는 반도체 소자.
CN116284065A (zh) * 2022-12-29 2023-06-23 江苏爱姆欧光电材料有限公司 一种含柔性基团茂稀土镧/钆配合物及其制备方法
IL326480A (en) 2023-09-04 2026-04-01 Adeka Corp Raw material for forming a thin layer, a thin layer, a method for producing a thin layer, and a lanthanum compound

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004527651A (ja) 2000-09-28 2004-09-09 プレジデント アンド フェロウズ オブ ハーバード カレッジ 酸化物、ケイ酸塩及びリン酸塩の気相成長
JP2011522833A (ja) 2008-06-05 2011-08-04 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ランタニド含有前駆体の調製およびランタニド含有膜の堆積
JP2017019777A (ja) 2015-07-07 2017-01-26 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． ランタン化合物及びその製造方法、ランタン前駆体組成物、並びにそれを利用した薄膜形成方法、及び集積回路素子の製造方法
US20190062916A1 (en) 2017-08-30 2019-02-28 Applied Materials, Inc. Lanthanide, Yttrium and Scandium precursors for ALD, CVD and Thin Film Doping and Methods of Use
JP2020504779A (ja) 2016-12-30 2020-02-13 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ランタニド前駆体およびそれを使用するランタニド含有膜の堆積

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US7816737B2 (en) 2006-03-31 2010-10-19 Tokyo Electron Limited Semiconductor device with gate dielectric containing mixed rare earth elements
CN102119238B (zh) 2008-07-24 2014-05-28 乔治洛德方法研究和开发液化空气有限公司 沉积含过渡金属的膜的方法
TWI554636B (zh) 2012-04-25 2016-10-21 應用材料股份有限公司 由金屬脒鹽前驅物製造介電膜的方法
US10913754B2 (en) 2015-07-07 2021-02-09 Samsung Electronics Co., Ltd. Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound
US20160315168A1 (en) * 2016-06-30 2016-10-27 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for forming gate insulators for tft structures
US10487398B2 (en) * 2016-12-04 2019-11-26 Applied Materials, Inc. Synthesis of metal nitride thin films materials using hydrazine derivatives
US10760159B2 (en) * 2017-07-13 2020-09-01 Applied Materials, Inc. Methods and apparatus for depositing yttrium-containing films
KR20220079618A (ko) 2019-10-08 2022-06-13 어플라이드 머티어리얼스, 인코포레이티드 항공우주 컴포넌트들 상에 코킹 방지 보호 코팅들을 증착하는 방법들
JP7653431B2 (ja) 2019-12-27 2025-03-28 ユーピー ケミカル カンパニー リミテッド イットリウム／ランタン族金属前駆体化合物、それを含む膜形成用組成物、及びそれを利用したイットリウム／ランタン族金属含有膜の形成方法
CN116583621B (zh) 2020-11-20 2025-07-25 默克专利股份有限公司 镧系及类镧系过渡金属的络合物

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004527651A (ja) 2000-09-28 2004-09-09 プレジデント アンド フェロウズ オブ ハーバード カレッジ 酸化物、ケイ酸塩及びリン酸塩の気相成長
JP2011522833A (ja) 2008-06-05 2011-08-04 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ランタニド含有前駆体の調製およびランタニド含有膜の堆積
JP2017019777A (ja) 2015-07-07 2017-01-26 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． ランタン化合物及びその製造方法、ランタン前駆体組成物、並びにそれを利用した薄膜形成方法、及び集積回路素子の製造方法
JP2020504779A (ja) 2016-12-30 2020-02-13 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ランタニド前駆体およびそれを使用するランタニド含有膜の堆積
US20190062916A1 (en) 2017-08-30 2019-02-28 Applied Materials, Inc. Lanthanide, Yttrium and Scandium precursors for ALD, CVD and Thin Film Doping and Methods of Use

Also Published As

Publication number Publication date
WO2022106508A1 (en) 2022-05-27
TWI894397B (zh) 2025-08-21
CN116583621B (zh) 2025-07-25
TW202229302A (zh) 2022-08-01
JP2024500630A (ja) 2024-01-10
CN116583621A (zh) 2023-08-11
KR20230110312A (ko) 2023-07-21
US12428439B2 (en) 2025-09-30
US20240400598A1 (en) 2024-12-05

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