JP2023538535A5 - - Google Patents
Info
- Publication number
- JP2023538535A5 JP2023538535A5 JP2023509574A JP2023509574A JP2023538535A5 JP 2023538535 A5 JP2023538535 A5 JP 2023538535A5 JP 2023509574 A JP2023509574 A JP 2023509574A JP 2023509574 A JP2023509574 A JP 2023509574A JP 2023538535 A5 JP2023538535 A5 JP 2023538535A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- formation
- heat
- thickness
- dielectric material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063063840P | 2020-08-10 | 2020-08-10 | |
| US63/063,840 | 2020-08-10 | ||
| PCT/US2021/043952 WO2022035618A1 (en) | 2020-08-10 | 2021-07-30 | Methods for forming dielectric materials with selected polarization for semiconductor devices |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023538535A JP2023538535A (ja) | 2023-09-08 |
| JP2023538535A5 true JP2023538535A5 (https=) | 2024-06-21 |
| JP7743144B2 JP7743144B2 (ja) | 2025-09-24 |
Family
ID=80115248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023509574A Active JP7743144B2 (ja) | 2020-08-10 | 2021-07-30 | 半導体デバイス用の、選択された分極を有する誘電体材料を形成する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12588434B2 (https=) |
| JP (1) | JP7743144B2 (https=) |
| KR (1) | KR102941906B1 (https=) |
| TW (1) | TWI907477B (https=) |
| WO (1) | WO2022035618A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023191981A1 (en) * | 2022-03-29 | 2023-10-05 | Tokyo Electron Limited | Bilayer stack for a ferroelectric tunnel junction and method of forming |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4449226B2 (ja) * | 2000-05-22 | 2010-04-14 | 東京エレクトロン株式会社 | 金属酸化膜の改質方法、金属酸化膜の成膜方法及び熱処理装置 |
| US6441417B1 (en) | 2001-03-28 | 2002-08-27 | Sharp Laboratories Of America, Inc. | Single c-axis PGO thin film on ZrO2 for non-volatile memory applications and methods of making the same |
| US20080087890A1 (en) | 2006-10-16 | 2008-04-17 | Micron Technology, Inc. | Methods to form dielectric structures in semiconductor devices and resulting devices |
| KR100877100B1 (ko) | 2007-04-16 | 2009-01-09 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 제조 방법 |
| US7709359B2 (en) | 2007-09-05 | 2010-05-04 | Qimonda Ag | Integrated circuit with dielectric layer |
| US8304823B2 (en) | 2008-04-21 | 2012-11-06 | Namlab Ggmbh | Integrated circuit including a ferroelectric memory cell and method of manufacturing the same |
| JP2010283040A (ja) | 2009-06-02 | 2010-12-16 | Panasonic Corp | 半導体装置及びその製造方法 |
| US9269785B2 (en) | 2014-01-27 | 2016-02-23 | Globalfoundries Inc. | Semiconductor device with ferroelectric hafnium oxide and method for forming semiconductor device |
| US9391162B2 (en) * | 2014-04-04 | 2016-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tunnel MOSFET with ferroelectric gate stack |
| US9147689B1 (en) | 2014-04-16 | 2015-09-29 | Micron Technology, Inc. | Methods of forming ferroelectric capacitors |
| US20160181091A1 (en) | 2014-12-19 | 2016-06-23 | Intermolecular, Inc. | Methods for Forming Ferroelectric Phases in Materials and Devices Utilizing the Same |
| US10153155B2 (en) | 2015-10-09 | 2018-12-11 | University Of Florida Research Foundation, Incorporated | Doped ferroelectric hafnium oxide film devices |
| US20170365719A1 (en) | 2016-06-15 | 2017-12-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Negative Capacitance Field Effect Transistor |
| TWI604605B (zh) | 2016-12-15 | 2017-11-01 | 國立交通大學 | 半導體裝置及其製造方法 |
| US11670699B2 (en) | 2016-12-15 | 2023-06-06 | National Yang Ming Chiao Tung University | Semiconductor device and method of manufacturing the same |
| US10276697B1 (en) * | 2017-10-27 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Negative capacitance FET with improved reliability performance |
| US10784362B2 (en) * | 2017-10-30 | 2020-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10461095B2 (en) | 2018-03-28 | 2019-10-29 | Sandisk Technologies Llc | Ferroelectric non-volatile memory |
| US10861973B2 (en) * | 2018-06-27 | 2020-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Negative capacitance transistor with a diffusion blocking layer |
| US10833150B2 (en) | 2018-07-11 | 2020-11-10 | International Business Machines Corporation | Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structures |
| US10991876B2 (en) | 2018-10-31 | 2021-04-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods to improve magnetic tunnel junction memory cells by treating native oxide |
| KR102880299B1 (ko) * | 2019-11-12 | 2025-10-31 | 삼성전자주식회사 | 유전체 물질층을 포함하는 박막 구조체 및 그 제조 방법, 이를 포함하는 전자소자 |
| JP2021180276A (ja) | 2020-05-15 | 2021-11-18 | キオクシア株式会社 | 記憶装置 |
-
2021
- 2021-07-30 JP JP2023509574A patent/JP7743144B2/ja active Active
- 2021-07-30 WO PCT/US2021/043952 patent/WO2022035618A1/en not_active Ceased
- 2021-07-30 KR KR1020237002323A patent/KR102941906B1/ko active Active
- 2021-07-30 US US17/390,399 patent/US12588434B2/en active Active
- 2021-08-09 TW TW110129234A patent/TWI907477B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10153155B2 (en) | Doped ferroelectric hafnium oxide film devices | |
| KR100722989B1 (ko) | 캐패시터 및 그 제조 방법 | |
| Lin et al. | Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing | |
| Chang et al. | Achieving atomistic control in materials processing by plasma–surface interactions | |
| CN113658941A (zh) | 一种hzo/ao/hzo纳米叠层薄膜及其制备方法和应用 | |
| JP2002170938A (ja) | 半導体装置およびその製造方法 | |
| JP2023538535A5 (https=) | ||
| KR20210092437A (ko) | 강유전체 커패시터 소자 및 그 제조 방법 | |
| US10115887B2 (en) | Ferroelectric ceramics and method for manufacturing the same | |
| JP2016086005A (ja) | 強誘電体セラミックス、電子部品及び強誘電体セラミックスの製造方法 | |
| KR102680744B1 (ko) | 전자빔 조사에 의한 강유전성 박막의 결정화 및 이를 이용한 전자 소자의 제조 방법 | |
| Alkoy et al. | Electrical properties and leakage current behavior of un-doped and Ti-doped lead zirconate thin films synthesized by sol–gel method | |
| TW200400550A (en) | Vapor phase growth method of oxide dielectric film | |
| Song et al. | Examining imprinted ferroelectric hysteresis loops and improved energy storage properties of Mn-doped epitaxial SrTiO3 thin films using heat treatment | |
| Raghavan et al. | Structural, Electrical, and Ferroelectric Properties of Nb‐Doped Na0. 5Bi4. 5Ti4O15 Thin Films | |
| Liu et al. | Effect of PbTiO3 seed layer on the orientation behavior and electrical properties of Bi (Mg1/2Ti1/2) O3–PbTiO3 ferroelectric thin films | |
| KR100716643B1 (ko) | 유전막의 제조 방법 및 이를 포함하는 캐패시터의 제조방법 | |
| KR19990018333A (ko) | Sbt 강유전체 박막의 제조방법 | |
| KR102953979B1 (ko) | 강유전체 박막 제조방법, 강유전체 박막 및 강유전체 박막용 전구체 용액 | |
| Lee et al. | Effect of Low‐Energy Accelerated Ion Bombardment on the Properties of Metal‐Organic Decomposition Derived SrBi2 (Ta, Nb) 2O9 Thin Films Processed at Low Temperature | |
| Zhu et al. | Effect of different annealing methods on the properties of PSTT thin films | |
| Wan et al. | The influence of the post-annealing temperature on the crystalline orientation and the crystallinity of PZT films | |
| JP3427795B2 (ja) | 薄膜の製造方法及びそれを用いた薄膜キャパシタの製造方法 | |
| CN120936041A (zh) | 一种提升初始态极化强度的铁电电容器及制备方法和应用 | |
| JPH07111107A (ja) | 強誘電体薄膜製造方法 |