KR102941906B1 - 반도체 디바이스용 선택형 분극을 갖는 유전체 재료의 형성 방법 - Google Patents
반도체 디바이스용 선택형 분극을 갖는 유전체 재료의 형성 방법Info
- Publication number
- KR102941906B1 KR102941906B1 KR1020237002323A KR20237002323A KR102941906B1 KR 102941906 B1 KR102941906 B1 KR 102941906B1 KR 1020237002323 A KR1020237002323 A KR 1020237002323A KR 20237002323 A KR20237002323 A KR 20237002323A KR 102941906 B1 KR102941906 B1 KR 102941906B1
- Authority
- KR
- South Korea
- Prior art keywords
- film
- processing method
- substrate processing
- heat
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
- H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6544—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
- H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
- H10P14/69395—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing zirconium, e.g. ZrO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
- H10P14/69397—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing two or more metal elements
Landscapes
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Chemical Vapour Deposition (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063063840P | 2020-08-10 | 2020-08-10 | |
| US63/063,840 | 2020-08-10 | ||
| PCT/US2021/043952 WO2022035618A1 (en) | 2020-08-10 | 2021-07-30 | Methods for forming dielectric materials with selected polarization for semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20230048000A KR20230048000A (ko) | 2023-04-10 |
| KR102941906B1 true KR102941906B1 (ko) | 2026-03-19 |
Family
ID=80115248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237002323A Active KR102941906B1 (ko) | 2020-08-10 | 2021-07-30 | 반도체 디바이스용 선택형 분극을 갖는 유전체 재료의 형성 방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12588434B2 (https=) |
| JP (1) | JP7743144B2 (https=) |
| KR (1) | KR102941906B1 (https=) |
| TW (1) | TWI907477B (https=) |
| WO (1) | WO2022035618A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023191981A1 (en) * | 2022-03-29 | 2023-10-05 | Tokyo Electron Limited | Bilayer stack for a ferroelectric tunnel junction and method of forming |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080087890A1 (en) | 2006-10-16 | 2008-04-17 | Micron Technology, Inc. | Methods to form dielectric structures in semiconductor devices and resulting devices |
| JP2010283040A (ja) | 2009-06-02 | 2010-12-16 | Panasonic Corp | 半導体装置及びその製造方法 |
| US20200020762A1 (en) | 2018-07-11 | 2020-01-16 | International Business Machines Corporation | Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structures |
| JP2021180276A (ja) | 2020-05-15 | 2021-11-18 | キオクシア株式会社 | 記憶装置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4449226B2 (ja) * | 2000-05-22 | 2010-04-14 | 東京エレクトロン株式会社 | 金属酸化膜の改質方法、金属酸化膜の成膜方法及び熱処理装置 |
| US6441417B1 (en) | 2001-03-28 | 2002-08-27 | Sharp Laboratories Of America, Inc. | Single c-axis PGO thin film on ZrO2 for non-volatile memory applications and methods of making the same |
| KR100877100B1 (ko) | 2007-04-16 | 2009-01-09 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 제조 방법 |
| US7709359B2 (en) | 2007-09-05 | 2010-05-04 | Qimonda Ag | Integrated circuit with dielectric layer |
| US8304823B2 (en) | 2008-04-21 | 2012-11-06 | Namlab Ggmbh | Integrated circuit including a ferroelectric memory cell and method of manufacturing the same |
| US9269785B2 (en) | 2014-01-27 | 2016-02-23 | Globalfoundries Inc. | Semiconductor device with ferroelectric hafnium oxide and method for forming semiconductor device |
| US9391162B2 (en) * | 2014-04-04 | 2016-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tunnel MOSFET with ferroelectric gate stack |
| US9147689B1 (en) | 2014-04-16 | 2015-09-29 | Micron Technology, Inc. | Methods of forming ferroelectric capacitors |
| US20160181091A1 (en) | 2014-12-19 | 2016-06-23 | Intermolecular, Inc. | Methods for Forming Ferroelectric Phases in Materials and Devices Utilizing the Same |
| US10153155B2 (en) | 2015-10-09 | 2018-12-11 | University Of Florida Research Foundation, Incorporated | Doped ferroelectric hafnium oxide film devices |
| US20170365719A1 (en) | 2016-06-15 | 2017-12-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Negative Capacitance Field Effect Transistor |
| TWI604605B (zh) | 2016-12-15 | 2017-11-01 | 國立交通大學 | 半導體裝置及其製造方法 |
| US11670699B2 (en) | 2016-12-15 | 2023-06-06 | National Yang Ming Chiao Tung University | Semiconductor device and method of manufacturing the same |
| US10276697B1 (en) * | 2017-10-27 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Negative capacitance FET with improved reliability performance |
| US10784362B2 (en) * | 2017-10-30 | 2020-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10461095B2 (en) | 2018-03-28 | 2019-10-29 | Sandisk Technologies Llc | Ferroelectric non-volatile memory |
| US10861973B2 (en) * | 2018-06-27 | 2020-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Negative capacitance transistor with a diffusion blocking layer |
| US10991876B2 (en) | 2018-10-31 | 2021-04-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods to improve magnetic tunnel junction memory cells by treating native oxide |
| KR102880299B1 (ko) * | 2019-11-12 | 2025-10-31 | 삼성전자주식회사 | 유전체 물질층을 포함하는 박막 구조체 및 그 제조 방법, 이를 포함하는 전자소자 |
-
2021
- 2021-07-30 JP JP2023509574A patent/JP7743144B2/ja active Active
- 2021-07-30 WO PCT/US2021/043952 patent/WO2022035618A1/en not_active Ceased
- 2021-07-30 KR KR1020237002323A patent/KR102941906B1/ko active Active
- 2021-07-30 US US17/390,399 patent/US12588434B2/en active Active
- 2021-08-09 TW TW110129234A patent/TWI907477B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080087890A1 (en) | 2006-10-16 | 2008-04-17 | Micron Technology, Inc. | Methods to form dielectric structures in semiconductor devices and resulting devices |
| JP2010283040A (ja) | 2009-06-02 | 2010-12-16 | Panasonic Corp | 半導体装置及びその製造方法 |
| US20200020762A1 (en) | 2018-07-11 | 2020-01-16 | International Business Machines Corporation | Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structures |
| JP2021180276A (ja) | 2020-05-15 | 2021-11-18 | キオクシア株式会社 | 記憶装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7743144B2 (ja) | 2025-09-24 |
| US20220044922A1 (en) | 2022-02-10 |
| KR20230048000A (ko) | 2023-04-10 |
| TWI907477B (zh) | 2025-12-11 |
| WO2022035618A1 (en) | 2022-02-17 |
| US12588434B2 (en) | 2026-03-24 |
| TW202215603A (zh) | 2022-04-16 |
| JP2023538535A (ja) | 2023-09-08 |
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