TWI907477B - 基板處理方法 - Google Patents

基板處理方法

Info

Publication number
TWI907477B
TWI907477B TW110129234A TW110129234A TWI907477B TW I907477 B TWI907477 B TW I907477B TW 110129234 A TW110129234 A TW 110129234A TW 110129234 A TW110129234 A TW 110129234A TW I907477 B TWI907477 B TW I907477B
Authority
TW
Taiwan
Prior art keywords
film
heat
processing method
substrate processing
thickness
Prior art date
Application number
TW110129234A
Other languages
English (en)
Chinese (zh)
Other versions
TW202215603A (zh
Inventor
蒂娜 Ｈ 特里優索
羅伯特 Ｄ 克拉克
史帝芬 Ｐ 康席格理歐
坎達巴拉 Ｎ 泰伯利
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202215603A publication Critical patent/TW202215603A/zh
Application granted granted Critical
Publication of TWI907477B publication Critical patent/TWI907477B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6544—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69395—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing zirconium, e.g. ZrO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69397—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing two or more metal elements

Landscapes

  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
TW110129234A 2020-08-10 2021-08-09 基板處理方法 TWI907477B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063063840P 2020-08-10 2020-08-10
US63/063,840 2020-08-10

Publications (2)

Publication Number Publication Date
TW202215603A TW202215603A (zh) 2022-04-16
TWI907477B true TWI907477B (zh) 2025-12-11

Family

ID=80115248

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110129234A TWI907477B (zh) 2020-08-10 2021-08-09 基板處理方法

Country Status (5)

Country Link
US (1) US12588434B2 (https=)
JP (1) JP7743144B2 (https=)
KR (1) KR102941906B1 (https=)
TW (1) TWI907477B (https=)
WO (1) WO2022035618A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023191981A1 (en) * 2022-03-29 2023-10-05 Tokyo Electron Limited Bilayer stack for a ferroelectric tunnel junction and method of forming

Citations (2)

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TW200843042A (en) * 2007-04-16 2008-11-01 Hynix Semiconductor Inc Non-volatile memory device and method for fabricating the same
TW202018871A (zh) * 2018-10-31 2020-05-16 台灣積體電路製造股份有限公司 半導體結構的形成方法

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JP4449226B2 (ja) * 2000-05-22 2010-04-14 東京エレクトロン株式会社 金属酸化膜の改質方法、金属酸化膜の成膜方法及び熱処理装置
US6441417B1 (en) 2001-03-28 2002-08-27 Sharp Laboratories Of America, Inc. Single c-axis PGO thin film on ZrO2 for non-volatile memory applications and methods of making the same
US20080087890A1 (en) 2006-10-16 2008-04-17 Micron Technology, Inc. Methods to form dielectric structures in semiconductor devices and resulting devices
US7709359B2 (en) 2007-09-05 2010-05-04 Qimonda Ag Integrated circuit with dielectric layer
US8304823B2 (en) 2008-04-21 2012-11-06 Namlab Ggmbh Integrated circuit including a ferroelectric memory cell and method of manufacturing the same
JP2010283040A (ja) 2009-06-02 2010-12-16 Panasonic Corp 半導体装置及びその製造方法
US9269785B2 (en) 2014-01-27 2016-02-23 Globalfoundries Inc. Semiconductor device with ferroelectric hafnium oxide and method for forming semiconductor device
US9391162B2 (en) * 2014-04-04 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel MOSFET with ferroelectric gate stack
US9147689B1 (en) 2014-04-16 2015-09-29 Micron Technology, Inc. Methods of forming ferroelectric capacitors
US20160181091A1 (en) 2014-12-19 2016-06-23 Intermolecular, Inc. Methods for Forming Ferroelectric Phases in Materials and Devices Utilizing the Same
US10153155B2 (en) 2015-10-09 2018-12-11 University Of Florida Research Foundation, Incorporated Doped ferroelectric hafnium oxide film devices
US20170365719A1 (en) 2016-06-15 2017-12-21 Taiwan Semiconductor Manufacturing Co., Ltd. Negative Capacitance Field Effect Transistor
TWI604605B (zh) 2016-12-15 2017-11-01 國立交通大學 半導體裝置及其製造方法
US11670699B2 (en) 2016-12-15 2023-06-06 National Yang Ming Chiao Tung University Semiconductor device and method of manufacturing the same
US10276697B1 (en) * 2017-10-27 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Negative capacitance FET with improved reliability performance
US10784362B2 (en) * 2017-10-30 2020-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10461095B2 (en) 2018-03-28 2019-10-29 Sandisk Technologies Llc Ferroelectric non-volatile memory
US10861973B2 (en) * 2018-06-27 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Negative capacitance transistor with a diffusion blocking layer
US10833150B2 (en) 2018-07-11 2020-11-10 International Business Machines Corporation Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structures
KR102880299B1 (ko) * 2019-11-12 2025-10-31 삼성전자주식회사 유전체 물질층을 포함하는 박막 구조체 및 그 제조 방법, 이를 포함하는 전자소자
JP2021180276A (ja) 2020-05-15 2021-11-18 キオクシア株式会社 記憶装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200843042A (en) * 2007-04-16 2008-11-01 Hynix Semiconductor Inc Non-volatile memory device and method for fabricating the same
TW202018871A (zh) * 2018-10-31 2020-05-16 台灣積體電路製造股份有限公司 半導體結構的形成方法

Also Published As

Publication number Publication date
JP7743144B2 (ja) 2025-09-24
US20220044922A1 (en) 2022-02-10
KR20230048000A (ko) 2023-04-10
KR102941906B1 (ko) 2026-03-19
WO2022035618A1 (en) 2022-02-17
US12588434B2 (en) 2026-03-24
TW202215603A (zh) 2022-04-16
JP2023538535A (ja) 2023-09-08

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