JP7743144B2 - 半導体デバイス用の、選択された分極を有する誘電体材料を形成する方法 - Google Patents

半導体デバイス用の、選択された分極を有する誘電体材料を形成する方法

Info

Publication number
JP7743144B2
JP7743144B2 JP2023509574A JP2023509574A JP7743144B2 JP 7743144 B2 JP7743144 B2 JP 7743144B2 JP 2023509574 A JP2023509574 A JP 2023509574A JP 2023509574 A JP2023509574 A JP 2023509574A JP 7743144 B2 JP7743144 B2 JP 7743144B2
Authority
JP
Japan
Prior art keywords
film
heat
forming
thickness
dielectric material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023509574A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023538535A5 (https=
JP2023538535A (ja
Inventor
エイチ． トリヨソ，ディーナ
ディー． クラーク，ロバート
コンシグリオ，スティーヴン
タピリー，カンダバラ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2023538535A publication Critical patent/JP2023538535A/ja
Publication of JP2023538535A5 publication Critical patent/JP2023538535A5/ja
Application granted granted Critical
Publication of JP7743144B2 publication Critical patent/JP7743144B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6544—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69395—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing zirconium, e.g. ZrO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69397—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing two or more metal elements

Landscapes

  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2023509574A 2020-08-10 2021-07-30 半導体デバイス用の、選択された分極を有する誘電体材料を形成する方法 Active JP7743144B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063063840P 2020-08-10 2020-08-10
US63/063,840 2020-08-10
PCT/US2021/043952 WO2022035618A1 (en) 2020-08-10 2021-07-30 Methods for forming dielectric materials with selected polarization for semiconductor devices

Publications (3)

Publication Number Publication Date
JP2023538535A JP2023538535A (ja) 2023-09-08
JP2023538535A5 JP2023538535A5 (https=) 2024-06-21
JP7743144B2 true JP7743144B2 (ja) 2025-09-24

Family

ID=80115248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023509574A Active JP7743144B2 (ja) 2020-08-10 2021-07-30 半導体デバイス用の、選択された分極を有する誘電体材料を形成する方法

Country Status (5)

Country Link
US (1) US12588434B2 (https=)
JP (1) JP7743144B2 (https=)
KR (1) KR102941906B1 (https=)
TW (1) TWI907477B (https=)
WO (1) WO2022035618A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023191981A1 (en) * 2022-03-29 2023-10-05 Tokyo Electron Limited Bilayer stack for a ferroelectric tunnel junction and method of forming

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003023140A (ja) 2001-03-28 2003-01-24 Sharp Corp 不揮発性メモリ用途のためのＺｒＯ２上の単一ｃ軸ＰＧＯ薄膜およびその製造方法
JP2010283040A (ja) 2009-06-02 2010-12-16 Panasonic Corp 半導体装置及びその製造方法
US20180175185A1 (en) 2016-12-15 2018-06-21 National Chiao Tung University Semiconductor device and method of manufacturing the same

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4449226B2 (ja) * 2000-05-22 2010-04-14 東京エレクトロン株式会社 金属酸化膜の改質方法、金属酸化膜の成膜方法及び熱処理装置
US20080087890A1 (en) 2006-10-16 2008-04-17 Micron Technology, Inc. Methods to form dielectric structures in semiconductor devices and resulting devices
KR100877100B1 (ko) 2007-04-16 2009-01-09 주식회사 하이닉스반도체 비휘발성 메모리 소자 제조 방법
US7709359B2 (en) 2007-09-05 2010-05-04 Qimonda Ag Integrated circuit with dielectric layer
US8304823B2 (en) 2008-04-21 2012-11-06 Namlab Ggmbh Integrated circuit including a ferroelectric memory cell and method of manufacturing the same
US9269785B2 (en) 2014-01-27 2016-02-23 Globalfoundries Inc. Semiconductor device with ferroelectric hafnium oxide and method for forming semiconductor device
US9391162B2 (en) * 2014-04-04 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel MOSFET with ferroelectric gate stack
US9147689B1 (en) 2014-04-16 2015-09-29 Micron Technology, Inc. Methods of forming ferroelectric capacitors
US20160181091A1 (en) 2014-12-19 2016-06-23 Intermolecular, Inc. Methods for Forming Ferroelectric Phases in Materials and Devices Utilizing the Same
US10153155B2 (en) 2015-10-09 2018-12-11 University Of Florida Research Foundation, Incorporated Doped ferroelectric hafnium oxide film devices
US20170365719A1 (en) 2016-06-15 2017-12-21 Taiwan Semiconductor Manufacturing Co., Ltd. Negative Capacitance Field Effect Transistor
US11670699B2 (en) 2016-12-15 2023-06-06 National Yang Ming Chiao Tung University Semiconductor device and method of manufacturing the same
US10276697B1 (en) * 2017-10-27 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Negative capacitance FET with improved reliability performance
US10784362B2 (en) * 2017-10-30 2020-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10461095B2 (en) 2018-03-28 2019-10-29 Sandisk Technologies Llc Ferroelectric non-volatile memory
US10861973B2 (en) * 2018-06-27 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Negative capacitance transistor with a diffusion blocking layer
US10833150B2 (en) 2018-07-11 2020-11-10 International Business Machines Corporation Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structures
US10991876B2 (en) 2018-10-31 2021-04-27 Taiwan Semiconductor Manufacturing Company, Ltd. Methods to improve magnetic tunnel junction memory cells by treating native oxide
KR102880299B1 (ko) * 2019-11-12 2025-10-31 삼성전자주식회사 유전체 물질층을 포함하는 박막 구조체 및 그 제조 방법, 이를 포함하는 전자소자
JP2021180276A (ja) 2020-05-15 2021-11-18 キオクシア株式会社 記憶装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003023140A (ja) 2001-03-28 2003-01-24 Sharp Corp 不揮発性メモリ用途のためのＺｒＯ２上の単一ｃ軸ＰＧＯ薄膜およびその製造方法
JP2010283040A (ja) 2009-06-02 2010-12-16 Panasonic Corp 半導体装置及びその製造方法
US20120025326A1 (en) 2009-06-02 2012-02-02 Panasonic Corporation Semiconductor device and manufacturing method thereof
US20180175185A1 (en) 2016-12-15 2018-06-21 National Chiao Tung University Semiconductor device and method of manufacturing the same
JP2018098478A (ja) 2016-12-15 2018-06-21 國立交通大學 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US20220044922A1 (en) 2022-02-10
KR20230048000A (ko) 2023-04-10
TWI907477B (zh) 2025-12-11
KR102941906B1 (ko) 2026-03-19
WO2022035618A1 (en) 2022-02-17
US12588434B2 (en) 2026-03-24
TW202215603A (zh) 2022-04-16
JP2023538535A (ja) 2023-09-08

Similar Documents

Publication Publication Date Title
TWI430368B (zh) 具有較薄之等效氧化層厚度的高介電係數閘極堆疊之形成方法
US7304004B2 (en) System and method for forming a gate dielectric
US8846543B2 (en) Methods of atomic layer deposition of hafnium oxide / erbium oxide bi-layer as advanced gate dielectrics
US6451641B1 (en) Non-reducing process for deposition of polysilicon gate electrode over high-K gate dielectric material
US8440520B2 (en) Diffused cap layers for modifying high-k gate dielectrics and interface layers
US20080258264A1 (en) Semiconductor device and method for manufacturing the same
US20150140838A1 (en) Two Step Deposition of High-k Gate Dielectric Materials
US8927438B2 (en) Methods for manufacturing high dielectric constant films
JP2008078675A (ja) 高誘電率絶縁膜を有する半導体装置
US20150255267A1 (en) Atomic Layer Deposition of Aluminum-doped High-k Films
JP7803625B2 (ja) 電気デバイス及びそれを含む半導体装置
US8735305B2 (en) Methods of forming fluorinated hafnium oxide gate dielectrics by atomic layer deposition
US20130316546A1 (en) Methods of atomic layer deposition of hafnium oxide as gate dielectrics
KR20250138821A (ko) 플라즈마를 사용하여 금속 질화물의 막 특성들을 조정하기 위한 방법
JP7743144B2 (ja) 半導体デバイス用の、選択された分極を有する誘電体材料を形成する方法
US20080164582A1 (en) Semiconductor devices and methods of manufacture thereof
JP7210682B2 (ja) 材料構造を改良するための処理
US20080211065A1 (en) Semiconductor devices and methods of manufacture thereof
JP4643902B2 (ja) 半導体装置とその製造方法
US7256145B2 (en) Manufacture of semiconductor device having insulation film of high dielectric constant
US20240128308A1 (en) Method for fabricating a ferroelectric device
US20220093466A1 (en) Epitaxial high-k etch stop layer for backside reveal integration
US20230138009A1 (en) Method for forming a semiconductor structure
TW202606463A (zh) 閘極界面中的高κ介電材料的選擇性沉積

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240613

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240613

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20250303

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250311

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250610

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250812

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20250908

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250908

R150 Certificate of patent or registration of utility model

Ref document number: 7743144

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260115