JP2023520835A5 - - Google Patents
Info
- Publication number
- JP2023520835A5 JP2023520835A5 JP2022542176A JP2022542176A JP2023520835A5 JP 2023520835 A5 JP2023520835 A5 JP 2023520835A5 JP 2022542176 A JP2022542176 A JP 2022542176A JP 2022542176 A JP2022542176 A JP 2022542176A JP 2023520835 A5 JP2023520835 A5 JP 2023520835A5
- Authority
- JP
- Japan
- Prior art keywords
- tungsten
- thickness
- approximately
- arrow
- sidewall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/845,749 US11417568B2 (en) | 2020-04-10 | 2020-04-10 | Methods for selective deposition of tungsten atop a dielectric layer for bottom up gapfill |
| US16/845,749 | 2020-04-10 | ||
| PCT/US2021/026446 WO2021207537A1 (en) | 2020-04-10 | 2021-04-08 | Methods for selective deposition of tungsten atop a dielectric layer for bottom up gapfill |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023520835A JP2023520835A (ja) | 2023-05-22 |
| JP2023520835A5 true JP2023520835A5 (enExample) | 2024-04-18 |
| JP7704758B2 JP7704758B2 (ja) | 2025-07-08 |
Family
ID=78006845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022542176A Active JP7704758B2 (ja) | 2020-04-10 | 2021-04-08 | ボトムアップ間隙充填のための誘電体層上へのタングステンの選択的堆積の方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11417568B2 (enExample) |
| JP (1) | JP7704758B2 (enExample) |
| KR (1) | KR20220167369A (enExample) |
| CN (1) | CN115039210B (enExample) |
| TW (1) | TWI868345B (enExample) |
| WO (1) | WO2021207537A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10573522B2 (en) | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
| CN113169056A (zh) | 2018-11-19 | 2021-07-23 | 朗姆研究公司 | 用于钨的钼模板 |
| CN116970925A (zh) | 2019-01-28 | 2023-10-31 | 朗姆研究公司 | 金属膜的沉积 |
| EP4018471A4 (en) | 2019-08-22 | 2024-01-17 | Lam Research Corporation | Substantially carbon-free molybdenum-containing and tungsten-containing films in semiconductor device manufacturing |
| US12334351B2 (en) | 2019-09-03 | 2025-06-17 | Lam Research Corporation | Molybdenum deposition |
| US12327762B2 (en) | 2019-10-15 | 2025-06-10 | Lam Research Corporation | Molybdenum fill |
| JP7686761B2 (ja) | 2021-02-23 | 2025-06-02 | ラム リサーチ コーポレーション | ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積 |
| JP2024514605A (ja) | 2021-04-14 | 2024-04-02 | ラム リサーチ コーポレーション | モリブデンの堆積 |
| KR20240008230A (ko) | 2021-05-14 | 2024-01-18 | 램 리써치 코포레이션 | 고 선택도 도핑된 하드마스크 막들 |
| US12652972B2 (en) | 2022-04-06 | 2026-06-09 | Applied Materials, Inc. | Field suppressed metal gapfill |
| US20250259894A1 (en) * | 2022-04-19 | 2025-08-14 | Lam Research Corporation | Molybdenum integration and void-free fill |
| US20230343643A1 (en) * | 2022-04-25 | 2023-10-26 | Applied Materials, Inc. | Gradient oxidation and etch for pvd metal as bottom liner in bottom up gap fill |
| KR20250022865A (ko) * | 2022-06-22 | 2025-02-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 텅스텐 갭-충전을 위한 텅스텐 표면의 처리 |
| US12559836B2 (en) | 2022-07-29 | 2026-02-24 | Applied Materials, Inc. | Bottom up molybdenum gapfill |
| US12588443B2 (en) * | 2022-09-27 | 2026-03-24 | Applied Materials Inc. | Methods for forming low resistivity contacts |
| KR20240073394A (ko) * | 2022-11-18 | 2024-05-27 | 삼성전자주식회사 | 반도체 장치 |
| US12652980B2 (en) | 2023-05-03 | 2026-06-09 | Applied Materials, Inc. | Silicon nitride damage-free dry etch method for tungsten removal in middle of line bottom-up tungsten integration |
| US12685046B2 (en) | 2023-06-15 | 2026-07-14 | Applied Materials, Inc. | Doped silicon oxide for bottom-up deposition |
| US12374568B2 (en) * | 2023-08-29 | 2025-07-29 | Applied Materials, Inc. | One chamber multi-station selective metal removal |
| US20250259886A1 (en) * | 2024-02-12 | 2025-08-14 | Applied Materials, Inc. | Methods of manufacturing interconnect structures |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9105943D0 (en) * | 1991-03-20 | 1991-05-08 | Philips Nv | A method of manufacturing a semiconductor device |
| JPH05152250A (ja) * | 1991-11-26 | 1993-06-18 | Sony Corp | メタルプラグの形成方法 |
| JP3408463B2 (ja) | 1999-08-17 | 2003-05-19 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6551929B1 (en) * | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
| US7504006B2 (en) | 2002-08-01 | 2009-03-17 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
| FR2896621B1 (fr) * | 2006-01-23 | 2008-06-27 | St Microelectronics Sa | Systeme electro-optique integre |
| US20070259111A1 (en) * | 2006-05-05 | 2007-11-08 | Singh Kaushal K | Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film |
| US7737026B2 (en) | 2007-03-29 | 2010-06-15 | International Business Machines Corporation | Structure and method for low resistance interconnections |
| US8551885B2 (en) * | 2008-08-29 | 2013-10-08 | Novellus Systems, Inc. | Method for reducing tungsten roughness and improving reflectivity |
| US9034768B2 (en) | 2010-07-09 | 2015-05-19 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
| US9653353B2 (en) * | 2009-08-04 | 2017-05-16 | Novellus Systems, Inc. | Tungsten feature fill |
| US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
| US20140273451A1 (en) | 2013-03-13 | 2014-09-18 | Applied Materials, Inc. | Tungsten deposition sequence |
| US9831183B2 (en) | 2014-08-07 | 2017-11-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact structure and method of forming |
| US9899258B1 (en) * | 2016-09-30 | 2018-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal liner overhang reduction and manufacturing method thereof |
| KR20190067939A (ko) * | 2016-11-08 | 2019-06-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 패터닝 응용들을 위한 상향식 필러들의 기하형상 제어 |
| TWI719316B (zh) * | 2017-06-12 | 2021-02-21 | 美商應用材料股份有限公司 | 利用鎢氧化還原之無縫鎢填充 |
| DE102017130683B4 (de) | 2017-12-20 | 2022-02-03 | Infineon Technologies Dresden Gmbh | Kontaktloch und Verfahren zum Herstellen des Kontaktlochs |
| US20190198392A1 (en) * | 2017-12-22 | 2019-06-27 | Applied Materials, Inc. | Methods of etching a tungsten layer |
-
2020
- 2020-04-10 US US16/845,749 patent/US11417568B2/en active Active
-
2021
- 2021-04-08 KR KR1020227024394A patent/KR20220167369A/ko active Pending
- 2021-04-08 JP JP2022542176A patent/JP7704758B2/ja active Active
- 2021-04-08 WO PCT/US2021/026446 patent/WO2021207537A1/en not_active Ceased
- 2021-04-08 CN CN202180012393.6A patent/CN115039210B/zh active Active
- 2021-04-09 TW TW110112892A patent/TWI868345B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4871433B2 (ja) | 半導体装置およびその製造方法 | |
| US20110053381A1 (en) | Method for modifying insulating film with plasma | |
| TWI232588B (en) | A method for making a semiconductor device having an ultra-thin high-k gate dielectric | |
| CN1993813B (zh) | 半导体装置的制造方法和等离子体氧化处理方法 | |
| TW201907548A (zh) | 三維反及閘(3d-nand)元件中用於字元線分離之方法 | |
| JP2009177161A (ja) | 絶縁膜の形成方法 | |
| KR102004046B1 (ko) | 산화티타늄 막의 성막 방법 및 하드 마스크의 형성 방법 | |
| CN101053083B (zh) | 半导体装置的制造方法和等离子体氧化处理方法 | |
| KR20210035750A (ko) | 성막 방법 | |
| JP2011029478A (ja) | 誘電体膜、誘電体膜を用いた半導体装置の製造方法及び半導体製造装置 | |
| TW399244B (en) | Method of manufacturing wiring structure having buried plugs in semiconductor device, and semiconductor device | |
| TW400605B (en) | The manufacturing method of the Shallow Trench Isolation (STI) | |
| TWI420601B (zh) | 製造一氮化閘極介電層之方法 | |
| CN1327496C (zh) | 制造具有双重间隔壁半导体器件的方法 | |
| JP6104928B2 (ja) | 層間多結晶シリコン誘電体キャップおよびその形成方法 | |
| JP2014533437A5 (enExample) | ||
| CN111755604A (zh) | 一种半导体器件制备方法 | |
| US7531902B2 (en) | Multi-layered metal line of semiconductor device having excellent diffusion barrier and method for forming the same | |
| JP2021534587A5 (enExample) | ||
| CN107591399B (zh) | 半导体结构及其形成方法 | |
| WO2010038887A1 (ja) | 二酸化珪素膜およびその形成方法、コンピュータ読み取り可能な記憶媒体並びにプラズマｃｖｄ装置 | |
| US7312150B2 (en) | Method of forming cobalt disilicide layer and method of manufacturing semiconductor device using the same | |
| TWI471938B (zh) | 製作半導體結構的方法 | |
| JP2008305921A (ja) | 半導体装置及びその製造方法 | |
| KR20060026836A (ko) | 반도체 소자의 게이트 패턴 형성방법 |