JP2023514535A5 - - Google Patents
Info
- Publication number
- JP2023514535A5 JP2023514535A5 JP2022547145A JP2022547145A JP2023514535A5 JP 2023514535 A5 JP2023514535 A5 JP 2023514535A5 JP 2022547145 A JP2022547145 A JP 2022547145A JP 2022547145 A JP2022547145 A JP 2022547145A JP 2023514535 A5 JP2023514535 A5 JP 2023514535A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- diode
- anode layer
- diode anode
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP20155140 | 2020-02-03 | ||
| EP20155140.5 | 2020-02-03 | ||
| PCT/EP2021/052514 WO2021156293A1 (en) | 2020-02-03 | 2021-02-03 | Reverse conducting power semiconductor device and method for manufacturing the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023514535A JP2023514535A (ja) | 2023-04-06 |
| JP2023514535A5 true JP2023514535A5 (enExample) | 2024-04-04 |
| JP7561196B2 JP7561196B2 (ja) | 2024-10-03 |
Family
ID=69467415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022547145A Active JP7561196B2 (ja) | 2020-02-03 | 2021-02-03 | 逆導通パワー半導体デバイスおよびその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12426349B2 (enExample) |
| EP (1) | EP4101008B1 (enExample) |
| JP (1) | JP7561196B2 (enExample) |
| CN (1) | CN115039233B (enExample) |
| WO (1) | WO2021156293A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114068728B (zh) * | 2021-12-17 | 2025-05-06 | 全球能源互联网研究院有限公司 | 一种快速恢复二极管及其制备方法 |
| TWI862120B (zh) * | 2023-08-30 | 2024-11-11 | 台亞半導體股份有限公司 | 寬能帶二極體及其製造方法 |
| US20260114099A1 (en) * | 2024-10-17 | 2026-04-23 | Samsung Display Co., Ltd. | Display device and electronic device |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2925970B2 (ja) | 1994-12-27 | 1999-07-28 | 日本碍子株式会社 | 逆導通静電誘導サイリスタ |
| JP3435246B2 (ja) | 1995-01-31 | 2003-08-11 | 日本碍子株式会社 | プレーナゲート構造を有する逆導通サイリスタ |
| US5682044A (en) | 1995-01-31 | 1997-10-28 | Takashige Tamamushi | Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure |
| US6274892B1 (en) * | 1998-03-09 | 2001-08-14 | Intersil Americas Inc. | Devices formable by low temperature direct bonding |
| JP3494023B2 (ja) | 1998-07-28 | 2004-02-03 | 株式会社日立製作所 | 半導体装置および半導体装置の駆動方法並びに電力変換装置 |
| DE69841124D1 (de) * | 1998-11-11 | 2009-10-15 | Mitsubishi Electric Corp | Rückwärtsleitender thyristor, halbleiteranordnung mit mechanischem kontakt und halbleitersubstrat |
| EP2477226B1 (en) * | 2009-09-07 | 2016-06-22 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device including semiconductor substrate having diode region and igbt region |
| EP2339613B1 (en) * | 2009-12-22 | 2015-08-19 | ABB Technology AG | Power semiconductor device and method for producing same |
| JP5972881B2 (ja) | 2010-09-29 | 2016-08-17 | アーベーベー・テヒノロギー・アーゲー | 逆導通パワー半導体デバイス |
| WO2015154908A1 (en) * | 2014-04-10 | 2015-10-15 | Abb Technology Ag | Turn-off power semiconductor device with improved centering and fixing of a gate ring, and method for manufacturing the same |
| EP2960941B1 (en) | 2014-06-26 | 2017-01-04 | ABB Schweiz AG | Reverse-conducting power semiconductor device |
| EP3073530B1 (en) | 2015-03-23 | 2017-05-03 | ABB Schweiz AG | Reverse conducting power semiconductor device |
| WO2017042363A1 (en) | 2015-09-11 | 2017-03-16 | Abb Schweiz Ag | Flat gate commutated thyristor |
-
2021
- 2021-02-03 JP JP2022547145A patent/JP7561196B2/ja active Active
- 2021-02-03 EP EP21702048.6A patent/EP4101008B1/en active Active
- 2021-02-03 WO PCT/EP2021/052514 patent/WO2021156293A1/en not_active Ceased
- 2021-02-03 US US17/797,218 patent/US12426349B2/en active Active
- 2021-02-03 CN CN202180012131.XA patent/CN115039233B/zh active Active
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