JP7561196B2 - 逆導通パワー半導体デバイスおよびその製造方法 - Google Patents

逆導通パワー半導体デバイスおよびその製造方法 Download PDF

Info

Publication number
JP7561196B2
JP7561196B2 JP2022547145A JP2022547145A JP7561196B2 JP 7561196 B2 JP7561196 B2 JP 7561196B2 JP 2022547145 A JP2022547145 A JP 2022547145A JP 2022547145 A JP2022547145 A JP 2022547145A JP 7561196 B2 JP7561196 B2 JP 7561196B2
Authority
JP
Japan
Prior art keywords
layer
diode
anode layer
thyristor
diode anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022547145A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023514535A5 (enExample
JP2023514535A (ja
Inventor
ビクストレーム，トビアス
ベムラパティ，ウママヘスワラ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Energy Ltd
Original Assignee
Hitachi Energy Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Energy Ltd filed Critical Hitachi Energy Ltd
Publication of JP2023514535A publication Critical patent/JP2023514535A/ja
Publication of JP2023514535A5 publication Critical patent/JP2023514535A5/ja
Application granted granted Critical
Publication of JP7561196B2 publication Critical patent/JP7561196B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/291—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0102—Manufacture or treatment of thyristors having built-in components, e.g. thyristor having built-in diode

Landscapes

  • Thyristors (AREA)
JP2022547145A 2020-02-03 2021-02-03 逆導通パワー半導体デバイスおよびその製造方法 Active JP7561196B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP20155140 2020-02-03
EP20155140.5 2020-02-03
PCT/EP2021/052514 WO2021156293A1 (en) 2020-02-03 2021-02-03 Reverse conducting power semiconductor device and method for manufacturing the same

Publications (3)

Publication Number Publication Date
JP2023514535A JP2023514535A (ja) 2023-04-06
JP2023514535A5 JP2023514535A5 (enExample) 2024-04-04
JP7561196B2 true JP7561196B2 (ja) 2024-10-03

Family

ID=69467415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022547145A Active JP7561196B2 (ja) 2020-02-03 2021-02-03 逆導通パワー半導体デバイスおよびその製造方法

Country Status (5)

Country Link
US (1) US12426349B2 (enExample)
EP (1) EP4101008B1 (enExample)
JP (1) JP7561196B2 (enExample)
CN (1) CN115039233B (enExample)
WO (1) WO2021156293A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026084372A1 (ko) * 2024-10-17 2026-04-23 삼성디스플레이 주식회사 표시 장치

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114068728B (zh) * 2021-12-17 2025-05-06 全球能源互联网研究院有限公司 一种快速恢复二极管及其制备方法
TWI862120B (zh) * 2023-08-30 2024-11-11 台亞半導體股份有限公司 寬能帶二極體及其製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013543260A (ja) 2010-09-29 2013-11-28 アーベーベー・テヒノロギー・アーゲー 逆導通パワー半導体デバイス
JP2016009871A (ja) 2014-06-26 2016-01-18 アーベーベー・テクノロジー・アーゲー 逆導通パワー半導体デバイス
JP2016181691A (ja) 2015-03-23 2016-10-13 アーベーベー・テクノロジー・アーゲー 逆導通パワー半導体デバイス

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2925970B2 (ja) 1994-12-27 1999-07-28 日本碍子株式会社 逆導通静電誘導サイリスタ
JP3435246B2 (ja) 1995-01-31 2003-08-11 日本碍子株式会社 プレーナゲート構造を有する逆導通サイリスタ
US5682044A (en) 1995-01-31 1997-10-28 Takashige Tamamushi Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
JP3494023B2 (ja) 1998-07-28 2004-02-03 株式会社日立製作所 半導体装置および半導体装置の駆動方法並びに電力変換装置
DE69841124D1 (de) * 1998-11-11 2009-10-15 Mitsubishi Electric Corp Rückwärtsleitender thyristor, halbleiteranordnung mit mechanischem kontakt und halbleitersubstrat
EP2477226B1 (en) * 2009-09-07 2016-06-22 Toyota Jidosha Kabushiki Kaisha Semiconductor device including semiconductor substrate having diode region and igbt region
EP2339613B1 (en) * 2009-12-22 2015-08-19 ABB Technology AG Power semiconductor device and method for producing same
WO2015154908A1 (en) * 2014-04-10 2015-10-15 Abb Technology Ag Turn-off power semiconductor device with improved centering and fixing of a gate ring, and method for manufacturing the same
WO2017042363A1 (en) 2015-09-11 2017-03-16 Abb Schweiz Ag Flat gate commutated thyristor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013543260A (ja) 2010-09-29 2013-11-28 アーベーベー・テヒノロギー・アーゲー 逆導通パワー半導体デバイス
JP2016009871A (ja) 2014-06-26 2016-01-18 アーベーベー・テクノロジー・アーゲー 逆導通パワー半導体デバイス
JP2016181691A (ja) 2015-03-23 2016-10-13 アーベーベー・テクノロジー・アーゲー 逆導通パワー半導体デバイス

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026084372A1 (ko) * 2024-10-17 2026-04-23 삼성디스플레이 주식회사 표시 장치

Also Published As

Publication number Publication date
US12426349B2 (en) 2025-09-23
CN115039233A (zh) 2022-09-09
EP4101008B1 (en) 2024-04-03
JP2023514535A (ja) 2023-04-06
CN115039233B (zh) 2026-02-27
US20230046742A1 (en) 2023-02-16
WO2021156293A1 (en) 2021-08-12
EP4101008A1 (en) 2022-12-14

Similar Documents

Publication Publication Date Title
US10109725B2 (en) Reverse-conducting semiconductor device
EP2622639B1 (en) Reverse-conducting power semiconductor device
JP6026418B2 (ja) バイポーラノンパンチスルー電力半導体デバイス
CN108292669B (zh) 关断型功率半导体器件及其制造方法
JP7561196B2 (ja) 逆導通パワー半導体デバイスおよびその製造方法
CN116918071B (zh) 带具有变化厚度基极区的栅极换流晶闸管单元
EP3948956B1 (en) Segmented power diode structure with improved reverse recovery
JP6088586B2 (ja) 逆導通パワー半導体デバイス
CN101228635B (zh) 功率半导体器件
JP6362702B2 (ja) バイポーラノンパンチスルーパワー半導体デバイス
JP2002118115A (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20240130

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240202

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240202

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20240202

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20240205

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240301

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240514

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240809

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240827

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240920

R150 Certificate of patent or registration of utility model

Ref document number: 7561196

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150