CN115039233B - 反向导通功率半导体器件及其制造方法 - Google Patents

反向导通功率半导体器件及其制造方法

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Publication number
CN115039233B
CN115039233B CN202180012131.XA CN202180012131A CN115039233B CN 115039233 B CN115039233 B CN 115039233B CN 202180012131 A CN202180012131 A CN 202180012131A CN 115039233 B CN115039233 B CN 115039233B
Authority
CN
China
Prior art keywords
layer
diode
main side
thyristor
diode anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180012131.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN115039233A (zh
Inventor
T·维克斯特罗
U·维穆拉帕蒂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Energy Co ltd
Original Assignee
Hitachi Energy Co ltd
Hitachi Energy Switzerland AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Energy Co ltd, Hitachi Energy Switzerland AG filed Critical Hitachi Energy Co ltd
Publication of CN115039233A publication Critical patent/CN115039233A/zh
Application granted granted Critical
Publication of CN115039233B publication Critical patent/CN115039233B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/291—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0102—Manufacture or treatment of thyristors having built-in components, e.g. thyristor having built-in diode

Landscapes

  • Thyristors (AREA)
CN202180012131.XA 2020-02-03 2021-02-03 反向导通功率半导体器件及其制造方法 Active CN115039233B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP20155140 2020-02-03
EP20155140.5 2020-02-03
PCT/EP2021/052514 WO2021156293A1 (en) 2020-02-03 2021-02-03 Reverse conducting power semiconductor device and method for manufacturing the same

Publications (2)

Publication Number Publication Date
CN115039233A CN115039233A (zh) 2022-09-09
CN115039233B true CN115039233B (zh) 2026-02-27

Family

ID=69467415

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180012131.XA Active CN115039233B (zh) 2020-02-03 2021-02-03 反向导通功率半导体器件及其制造方法

Country Status (5)

Country Link
US (1) US12426349B2 (enExample)
EP (1) EP4101008B1 (enExample)
JP (1) JP7561196B2 (enExample)
CN (1) CN115039233B (enExample)
WO (1) WO2021156293A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114068728B (zh) * 2021-12-17 2025-05-06 全球能源互联网研究院有限公司 一种快速恢复二极管及其制备方法
TWI862120B (zh) * 2023-08-30 2024-11-11 台亞半導體股份有限公司 寬能帶二極體及其製造方法
US20260114099A1 (en) * 2024-10-17 2026-04-23 Samsung Display Co., Ltd. Display device and electronic device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106129111A (zh) * 2015-03-23 2016-11-16 Abb技术有限公司 反向导通功率半导体器件

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2925970B2 (ja) 1994-12-27 1999-07-28 日本碍子株式会社 逆導通静電誘導サイリスタ
JP3435246B2 (ja) 1995-01-31 2003-08-11 日本碍子株式会社 プレーナゲート構造を有する逆導通サイリスタ
US5682044A (en) 1995-01-31 1997-10-28 Takashige Tamamushi Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
JP3494023B2 (ja) 1998-07-28 2004-02-03 株式会社日立製作所 半導体装置および半導体装置の駆動方法並びに電力変換装置
DE69841124D1 (de) * 1998-11-11 2009-10-15 Mitsubishi Electric Corp Rückwärtsleitender thyristor, halbleiteranordnung mit mechanischem kontakt und halbleitersubstrat
EP2477226B1 (en) * 2009-09-07 2016-06-22 Toyota Jidosha Kabushiki Kaisha Semiconductor device including semiconductor substrate having diode region and igbt region
EP2339613B1 (en) * 2009-12-22 2015-08-19 ABB Technology AG Power semiconductor device and method for producing same
JP5972881B2 (ja) 2010-09-29 2016-08-17 アーベーベー・テヒノロギー・アーゲー 逆導通パワー半導体デバイス
WO2015154908A1 (en) * 2014-04-10 2015-10-15 Abb Technology Ag Turn-off power semiconductor device with improved centering and fixing of a gate ring, and method for manufacturing the same
EP2960941B1 (en) 2014-06-26 2017-01-04 ABB Schweiz AG Reverse-conducting power semiconductor device
WO2017042363A1 (en) 2015-09-11 2017-03-16 Abb Schweiz Ag Flat gate commutated thyristor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106129111A (zh) * 2015-03-23 2016-11-16 Abb技术有限公司 反向导通功率半导体器件

Also Published As

Publication number Publication date
US12426349B2 (en) 2025-09-23
CN115039233A (zh) 2022-09-09
EP4101008B1 (en) 2024-04-03
JP7561196B2 (ja) 2024-10-03
JP2023514535A (ja) 2023-04-06
US20230046742A1 (en) 2023-02-16
WO2021156293A1 (en) 2021-08-12
EP4101008A1 (en) 2022-12-14

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Address after: Zurich, SUI

Applicant after: Hitachi Energy Co.,Ltd.

Address before: Swiss Baden

Applicant before: Hitachi energy Switzerland AG

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