JP6192742B2 - 光電子デバイス及びその製造方法 - Google Patents
光電子デバイス及びその製造方法 Download PDFInfo
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- 230000005693 optoelectronics Effects 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000463 material Substances 0.000 claims description 104
- 239000004065 semiconductor Substances 0.000 claims description 95
- 238000000576 coating method Methods 0.000 claims description 85
- 239000011248 coating agent Substances 0.000 claims description 60
- 239000004020 conductor Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 28
- 239000011149 active material Substances 0.000 claims description 11
- 238000000605 extraction Methods 0.000 claims description 11
- 238000004891 communication Methods 0.000 claims description 8
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000013543 active substance Substances 0.000 description 2
- 229920001222 biopolymer Polymers 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
第1及び第2溝列と、それらの間のチャネルとを含む基板と、
前記第1及び第2溝列の各溝は、第1及び第2面と、それらの間のキャビティとを有し、
前記キャビティは、第1半導体材料で少なくとも部分的に充填され、
前記第1面は導体材料でコーティングされ、前記第2面は第2半導体材料でコーティングされており、
前記チャネルは、前記第1及び第2溝列の溝を横断する、光電子デバイスが提供される。
第1及び第2溝列とそれらの間のチャネルとを含む基板であって、前記第1及び第2溝列の各溝は第1及び第2面とそれらの間のキャビティとを有し、チャネルは第1及び第2溝列の溝を横断する、基板を提供するステップと、
少なくとも前記第1面を導体材料でコーティングし、前記第2面を半導体材料でコーティングするステップと、
前記キャビティを他の半導体で少なくとも部分的に充填するステップと、を含む方法が提供される。
ここで、前述の通り、∠607は臨界角607、601はデリニエーション機能の鉛直高さ、602はデリニエーション機能の水平幅、∠603はデリニエーション機能の開始角度である。実施形態において、角度5°を安全率として逆タンジェント演算の結果に加える。但し、用途に応じて、この安全率は他の実施形態でより大きい又はより小さい可能性がある。
Claims (14)
- 光電子デバイス(301)であって、
第1及び第2溝列(304a、304b)と、それらの間のチャネル(302)とを含む基板(305)と、
前記第1及び第2溝列(304a、304b)の各溝は、第1及び第2面(312a、312b)と、それらの間のキャビティ(314)とを有し、
前記キャビティ(314)は、第1半導体材料(316)で少なくとも部分的に充填され、
前記第1面(312a)は導体材料(318)でコーティングされ、前記第2面(312b)は第2半導体材料(317)でコーティングされており、
前記第1及び第2溝列(304a、304b)の部分とそれらの間のチャネル(302)の部分とは、互いに実質的に平行であり、
前記チャネル(302)は、前記第1及び第2溝列(304a、304b)の溝を横断することを特徴とする、光電子デバイス。 - 前記チャネル(302)は、前記第1溝列(304a)の溝を各溝の端の方に横断し、前記第1及び第2溝列(304a、304b)の間を通ってから、前記第2溝列(304b)の溝を各溝の反対の端の方に横断する、請求項1に記載の光電子デバイス。
- 前記第1及び第2溝列(304a、304b)の各溝の第1及び第2面(312a、312b)は、前記導体材料(318)でコーティングされている、請求項1又は2に記載の光電子デバイス。
- 前記第1半導体材料(316)はp型半導体材料であり、前記第2半導体材料(317)はn型半導体材料である、請求項1〜3のいずれかに記載の光電子デバイス。
- 前記第1及び第2半導体材料(316、317)は合わせて活性物質と見なされ、該活性物質は前記キャビティ(314)内及び該キャビティ(314)の第1及び/又は第2面(312a、312b)上に堆積されて、前記活性物質からの電荷の挿入又は抽出のためのオーム性及び整流性接触を提供する、請求項1〜4のいずれかに記載の光電子デバイス。
- 前記第1及び第2溝列(304a、304b)の各溝の前記キャビティ(314)内の第1半導体材料(316)、前記第2面(312b)上の第2半導体材料(317)、及び少なくとも第1面(312a)上の導体材料(318)は、全て独立して電気的に連通している、請求項1〜5のいずれかに記載の光電子デバイス。
- 前記チャネル(302)は、第1及び第2面と、それらの間のチャネルキャビティとを有し、前記チャネルの第1及び第2面は、導体材料(318)でコーティングされている、請求項1〜6のいずれかに記載の光電子デバイス。
- 前記チャネル(302)の第1側及び第2側は、電気回路の陽極及び陰極を提供し、前記第1及び第2側は、前記チャネル(302)の第1及び第2面上の導体材料(318)と電気的に連通している、請求項7に記載の光電子デバイス。
- 前記チャネル(302)の深さは、前記第1及び第2溝列(304a、304b)の溝の深さの少なくとも2倍である、請求項1〜8のいずれかに記載の光電子デバイス。
- 前記チャネル(302)の深さは、チャネル(302)の幅の2倍である、請求項1〜9のいずれかに記載の光電子デバイス。
- 光電子デバイス(301)の製造方法であって、
第1及び第2溝列(304a、304b)とそれらの間のチャネル(302)とを含む基板(305)であって、第1及び第2溝列(304a、304b)の各溝は第1及び第2面(312a、312b)とそれらの間のキャビティ(314)とを有し、第1及び第2溝列(304a、304b)の部分とそれらの間のチャネル(302)の部分とは、互いに実質的に平行であり、チャネル(302)は第1及び第2溝列(304a、304b)の溝を横断する、基板(305)を提供するステップと、
少なくとも第1面(312a)を導体材料(318)でコーティングし、第2面(312b)を半導体材料(317)でコーティングするステップと、を含み、
さらに、キャビティ(314)を他の半導体材料(316)で少なくとも部分的に充填するステップを含むことを特徴とする、方法。 - 前記半導体材料(317)はp型半導体材料であり、前記他の半導体材料(316)はn型半導体材料である、請求項11に記載の方法。
- 前記第1及び第2溝列(304a、304b)の各溝の少なくとも第1面(312a)を導体材料(318)でコーティングし、第1及び第2溝列(304a、304b)の各溝の第2面(312b)を半導体材料(317)でコーティングするステップは、軸外方向コーティングプロセスを含む、請求項11又は12に記載の方法。
- 前記軸外方向コーティングプロセスは、第1及び第2溝列(304a、304b)の各溝の第1又は第2面(312a、312b)のみがコーティングされるように、基板(305)面即ち第1及び第2溝列(304a、304b)の各溝に対してある角度で導体材料(318)及び半導体材料(317)を噴霧する、請求項13に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1301683.7 | 2013-01-30 | ||
GB201301683A GB201301683D0 (en) | 2013-01-30 | 2013-01-30 | Method of creating non-conductive delineations with a selective coating technology on a structured surface |
PCT/GB2014/050251 WO2014118545A1 (en) | 2013-01-30 | 2014-01-30 | Optoelectronic device and method of producing the same |
Publications (2)
Publication Number | Publication Date |
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JP2016508672A JP2016508672A (ja) | 2016-03-22 |
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EP (1) | EP2951866B1 (ja) |
JP (1) | JP6192742B2 (ja) |
CN (1) | CN104969361B (ja) |
BR (1) | BR112015017500B1 (ja) |
CY (1) | CY1117720T1 (ja) |
ES (1) | ES2583412T3 (ja) |
GB (1) | GB201301683D0 (ja) |
HK (1) | HK1215756A1 (ja) |
HR (1) | HRP20160892T1 (ja) |
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PT (1) | PT2951866T (ja) |
SI (1) | SI2951866T1 (ja) |
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WO2019158024A1 (en) * | 2018-02-15 | 2019-08-22 | (Cnbm) Bengbu Design & Research Institute For Glass Industry Co., Ltd | Method for producing a thin-film solar module |
GB202004534D0 (en) * | 2020-03-27 | 2020-05-13 | Power Roll Ltd | Substrate for a two-terminal device |
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JP7328279B2 (ja) | 2021-06-18 | 2023-08-16 | Nissha株式会社 | 薄膜キャパシタおよびその製造方法 |
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PL2951866T3 (pl) | 2016-12-30 |
US20150372176A1 (en) | 2015-12-24 |
BR112015017500B1 (pt) | 2022-01-04 |
BR112015017500A2 (pt) | 2017-07-11 |
HUE029314T2 (en) | 2017-02-28 |
CY1117720T1 (el) | 2017-05-17 |
US10825941B2 (en) | 2020-11-03 |
US20180182908A1 (en) | 2018-06-28 |
GB201301683D0 (en) | 2013-03-13 |
SMT201600240B (it) | 2016-08-31 |
HRP20160892T1 (hr) | 2016-09-23 |
EP2951866A1 (en) | 2015-12-09 |
PT2951866T (pt) | 2016-07-14 |
HK1215756A1 (zh) | 2016-09-09 |
WO2014118545A1 (en) | 2014-08-07 |
CN104969361B (zh) | 2016-11-09 |
EP2951866B1 (en) | 2016-06-22 |
JP2016508672A (ja) | 2016-03-22 |
SI2951866T1 (sl) | 2016-09-30 |
CN104969361A (zh) | 2015-10-07 |
ES2583412T3 (es) | 2016-09-20 |
US9899551B2 (en) | 2018-02-20 |
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